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Malbert, N. ; Labat, N. ; Lambert, B. ; Touboul, A. ; Pataut, G. (2002) Evidence of surface trap effects on pseudomorphic HEMT submitted to impact ionisation stresses. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Dienelt, J. ; Zimmer, K. ; Rauschenbach, B. (2001) Etching behaviour of GaAs with chlorine chemically assisted ion beam etching depending on the surface temperature. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Gorelenok, A.T. ; Andrievskii, V.F. ; Kamanin, A.V. ; Kohanovskii, S.I. ; Shmidt, N.M (2001) Electrical and photoluminescence properties of bulk GaAs after surface gettering. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Stevens, K.S. ; Welser, R. E. ; Deluca, P.M. ; Landini, B. E. ; Lutz, C. R. ; Wolfsdorf-Brenner, T. L. (2001) Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Hashizume, Tamotsu ; Saitoh, Toshiya (2001) Correlation between Chemical and Electrical Properties of n-InGaP Surfaces Grown by MOVPE. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Eastman, Lester F. (2001) AlGaN/GaN HFET’S. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Danneville, F. ; Tamen, B. ; Cappy, A. ; Juraver, J-B ; Llopis, O. ; Graffeuil, J. (2001) Low frequency noise conversion in fets under nonlinear operation. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kamenopolsky, Stanimir ; Dankov, Plamen (2001) High performance test fixture for 10-Port MMIC's characterisation. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kantanen, M. ; Lahdes, M. ; Tuovinen, J. ; Vähä-Heikkilä, T. ; Kangaslahti, P. ; Jukkala, P. ; Hughes, N. (2001) A wideband automated measurement system for on-wafer noise parameter measurements at 50-75 GHZ. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Schreurs, D. ; Verspecht, J. ; Acciari, G. ; Colantonio, P. ; Giannini, F. ; Limiti, E. ; Leuzzi, G. (2001) Theoretical and experimental assessment of the non-linear scattering functions for the cad of non-linear microwave circuits. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bouysse, Ph. ; Barataud, D. ; Sommet, R. ; Teyssier, J.P. ; Nébus, J.M. ; Quéré, R. (2001) New trends in characterization and modeling of High Power devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kim, Youngsik ; Kim, JiYoun ; Kim, Sungwoo ; Kim, Bumman (2001) A Novel method for the Higher Order components extraction of the Channel current in GaAs MESFET. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Malaver, Emigdio ; Garcia, José Angel ; Tazon, Antonio ; Mediavilla, Angel (2001) A novel approach for highly linear automatic gain control of a hemt small-signal amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Olavsbråten, Morten (2001) Parameter extraction and evaluation of the Bias dependence of Tf, for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Walden, Mark G. (2001) Pulsed power operation of commercially available silicon carbide mesfets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Carbonera, F. ; Bertazzi, F. ; Goano, M. ; Ghione, G. (2001) Efficient CM-FEM modeling of coplanar waveguides for high-speed e/o modulators. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Manfrin, S.K. ; Orengo, G. ; Giannini, F. ; Romero, M. A. (2001) High tuning speed optical receiver front-end for packet-switched WDM Networks. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Monteiro, Paulo P. ; Violas, Manuel ; Sousa Ribeiro, Rui ; Ferreira da Rocha, José (2001) 40 Gbit/s GaAs MMIC Signal Processor for Optical Communication Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Linnik, M. ; Christou, A. (2001) Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Gould, P. ; Lin, J. ; Boric-Lubecke, O. (2001) NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Masini, Leonardo ; Pozzoni, Massimo ; Caliumi, Alberto ; Tomasini, Luciano ; Morigi, Damiana ; Lemaire, Frederic (2001) A fully integrated silicon-germanium X-Band VCO. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kriz, Jeff (2001) Mixed Mode Silicon-on-Insulator MMIC Technology for digitally controlled RF/Microwave Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sueamtsu, N. ; Ono, M. ; Nakajima, K. (2001) Low Loss On-chip passive components for Si-MMIC by using CPW structure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

de Hek, A.P. ; de Boer, A. ; Svensson, T. (2001) C-band 10-Watt HBT High-power Amplifier with 50% PAE. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Wei, C.-J. ; Gering, J. ; Sprinkle, S. ; Tkachenko, Y.A. ; Bartle, D. (2001) A Compact, semi-physically based model predicts accurate aower and linearity of power InGaP HBTs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Rudiakova, Anna N. ; Krizhanovski, Vladimir G. ; Kazimierczuk, Marian K. (2001) Phase tuning approach for polyharmonic power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bianco, P. ; Donati Guerrieri, S. ; Ghione, G. ; Pirola, M. ; Naldi, C.U. ; Florian, C. ; Vannini, G. ; Santarelli, A. ; Filicori, F. ; Manfredi, L. (2001) Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bignamini, M. ; Favre, G. ; Meazza, A. ; Pagani, M. ; Palomba, F. ; Sivverini, G. (2001) Efficient development of highly linear MMIC power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Deluca, P.M. ; Landini, B.E. ; Welser, R. E. (2001) Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Rodriguez-Tellez, J. ; Ali, N.T. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2001) Electric field dependency of traps in mesfet/hemt devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tocca, L. ; Di Carlo, A. ; Berliocchi, M. ; Lugli, P. ; Bartocci, M. ; De Santis, G. ; Giolo, G. ; Rossi, L. ; Gemma, M. (2001) Accurate estimation of layer temperature in PHEMT MMIC by photoconductance measurements. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Santarelli, A. ; Zucchelli, G. ; Paganelli, R. ; Vannini, G. ; Filicori, F. (2001) Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Leier, H. ; Wieszt, A. ; Behtash, R. ; Tobler, H. ; Vescan, A. ; Dietrich, R. ; Schurr, A. ; Sledzik, H. ; Birbeck, JCH. ; Balmer, R. S. ; Martin, T. (2001) RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Théron, D. ; Cordier, Y. ; Wallart, X. ; Bollaert, S. ; Zaknoune, M. ; Boudrissa, M. ; Bonte, B. ; Gaquière, C. ; Rousseau, M. ; Dessenne, F. ; Mollot, F. ; Cappy, A. ; Fauquembergue, R. ; De Jaeger, J.C. (2001) Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Floriot, D. ; Delage, S. L. ; Piotrowicz, S. ; Chartier, E. ; Auxemery, P. (2001) High power HBT technologies : present and trends. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Litwin, A. ; Chen, Q. ; Johansson, J. ; Ma, G. ; Olofsson, L-A. ; Perugupalli, P. (2001) High Power LDMOS technology for wireless infrastructure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Villemazet, JF. ; Rogeaux, E. ; Roques, D. ; Cayrou, Jean-Christophe ; Cogo, B. ; Solulard, M. ; Cazaux, Jean-Louis (2001) Novel compact double balanced coplanar active mixer Application to a single chip MMIC receiver for satellite repeater. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Virk, Robinder S. ; Bos, Thomas A. ; Camargo, E. ; Hasegawa, Yuichi (2001) High dynamic range MMIC converters for LMDS applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Zelley, C. A. ; Barnes, A. R. ; Ashcroft, R. W. (2001) A 60 GHz double balanced sub-harmonic mixer MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Nakano, Hiroshi ; Yamawaki, Hiromoto ; Hirachi, Yasutake (2001) Cost-Effective 60-GHz Modules with Phase-Noise of -110dBc/Hz at 100KHz Offset using Novel Self-Heterodyne Scheme. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Meng, C. C. ; Lu, S. S. ; Chen, H. C. ; Chiang, M. H. ; Kuan, J. F. ; Lin, D. C. ; Huang, G. W. (2001) DC-8 GHz 11 dB Gain GaInP/GaAs HBT Double balanced Gilbert Micromixer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kim, Woonyun ; Kang, Sanghoon ; Lee, Kyungho ; Chung, Minchul ; Kim, Bumman (2001) Non linear behavior of power HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Aja, B. ; de la Fuente, M.L. ; Pascual, J.P. ; Mediavilla, A. ; Artal, E. (2001) Low noise monolithic Ka-BAND P-HEMT amplifier for space applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Cidronali, A. ; Collodi, G. ; Deshpande, M. ; El-Zein, N. ; Manes, G. ; Nair, V. (2001) A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bartocci, M. ; De Santis, G. ; Giolo, G. ; Rossi, L. ; Gemma, M. (2001) 4W TX/RX Multi Chip Module for 6-18GHz Phased Array. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Murgadella, F. ; Coulon, P. ; Moreau, C. (2001) X-BAND technologies and MMICS comparison for active phased Array Radar. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Colicchia, L. ; Comparini, M.C. ; Di Nardo, S. ; Leone, C. ; Giordano, M. ; Ranieri, P. ; Suriani, A. ; Tursini, M. (2001) Ku & C Band solid state switch matrix for satellite payloads using LTCC multilayer substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bollaert, S. ; Wallart, X. ; Lepilliet, S. ; Cappy, A. ; Jalaguier, E. ; Pocas, S. ; Aspar, B. (2001) 0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Joodaki, M. ; Senyildiz, T. ; Kompa, G. ; Hillmer, H. ; Leinhos, T. ; Kassing, R. (2001) Quasi-Monolithic integration technology (QMIT) for power applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sercu, Jeannick ; Knockaert, Luc ; De Zutter, Daniel (2001) A new mesh reduction technology for the method of moments modelling of planar RF and microwave interconnects. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Schreurs, D. ; De Raedt, W. ; Vandersmissen, R. ; Neuhaus, B. ; Beyer, A. ; Nauwelaers, B. (2001) Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Enciso, M. ; Aniel, F. ; Giguerre, L. ; Crozat, P. ; Adde, R. (2001) High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Panks, A. J. ; Batty, W. ; David, S. ; Johnson, R. G. ; Snowden, C. M. (2001) Fully physical electro-thermal CAD for Power FET optimisation by Non Uniform Finger Spacing. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sannino, M. ; Caddemi, A. ; Donato, N. (2001) On wafer thermal investigation of gaas-based microwave transistors by a thermoelectric system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Cappelluti, F. ; Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. ; Naldi, C. U. ; Peroni, M. ; Cetronio, A. ; Graffitti, R. (2001) Self-consistent fully dynamic electro-thermal simulation of power HBTS. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Fagan, Christopher J. ; Snowden, Christopher M. (2001) Electro-Thermal modelling of very High power Microwave bipolar Junction transistors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Lopez, D. ; Sommet, R. ; Quéré, R. (2001) Spice Thermal Subcircuit of Multifinger HBT derived from Ritz Vector reduction technique of 3D Thermal Simulation for electrothermal modeling. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Simbürger, W. ; Bakalski, W. ; Kehrer, D. ; Wohlmuth, H.D. ; Rest, M. ; Aufinger, K. ; Boguth, S. ; Scholtz, A. L. (2001) A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sutton, William ; Alekseev, Egor ; Pavlidis, Dimitris (2001) Microwave and DC Performance of AlGaN/GaN HEMTs Grown on Si using a New Growth Technique. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Madonna, G. L. ; Pfost, M. ; Schultheis, R. ; Mueller, J.E. (2001) Investigations of linearity characteristics for larege-emitter area GaAs HBT power stages. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bouisse, Gerard (2001) Latest advances in high power SI MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Jolly, C. ; Keenan, R. ; Hug, J. ; Lucek, J. ; Ou, S. ; Bonaguide, G. ; Osman, S. ; Wagemans, A. (2001) GaAs HBT PA module design for CDMA handsets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Saint-Etienne, Eric ; Reig, Bruno ; Deborgies, F. ; Ghesquiers, Jean-Pierre ; Roques, Daniel ; Le Meur, Gerard ; Cogo, B. ; Mancuso, Yves (2001) Silicon Packaging and RF Solder-free Interconnect for X-band SAR T/R Module. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tentzeris, M. ; Laskar, J. ; Sutono, A. ; Lee, C.–H. ; Davis, M.F. ; Obatoyinbo, A. ; Lim, K. (2001) Development of Highly Integrated 3D Microwave - Millimeter Wave Radio Front-End System-on-Package (SOP). In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

De Raedt, W. ; Brebels, S. ; Monfraix, Ph. ; Carchon, G. ; Jourdain, Anne ; Tilmans, Harrie A.C. (2001) 0-Level packaging techniques for flip-chip mounted MMICs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Morioka, Shigeki ; Yokoi, Kiyotaka ; Yoshida, Katsuyuki ; Shirasaki, Takayuki (2001) A DC to 40GHz Low Cost Surface Mountable RF-VIA TM Package. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Edgar, David L. ; Chen, Yifang ; McEwan, Fiona ; McLelland, Hellen ; Boyd, E. ; Moran, David ; Thoms, Stephen ; Macintyre, Douglas ; Elgaid, K. ; Cao, Xin ; Stanley, Colin ; Thayne, Iain (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Gaquière, Christophe ; Ducatteau, D. ; Delemotte, Pascal ; Crosnier, Y. ; Tranchant, Sylvie ; Carnez, B. (2002) Non-linear distortion analysis of Ka BAND MMIC’s under single-tone, TWO-TONE and NPR excitations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maya, M.C. ; Lazaro, A. ; Pradell, L. (2002) Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, C. C. ; Peng, A. S. ; Wen, S. Y. ; Huang, G. W. (2002) Direct observation of Gain compression mechanisms in PHEMT by RF Gate and Drain Currents. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vähä-Heikkilä, T. ; Lahdes, M. ; Kantanen, M. ; Karttaavi, T. ; Tuovinen, J. (2002) Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reveyrand, T. ; Mazière, C. ; Nébus, J. M. ; Quéré, R. ; Mallet, A. ; Lapierre, L. ; Sombrin, J. (2002) A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bazzi, H. ; Bosse, S. ; Delage, S. L. ; Barelaud, Bruno ; Billonnet, L. ; Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Floriot, D. ; Chartier, E. ; Caillas, N. ; Delage, S. L. ; Jacquet, JC ; Piotrowicz, S. (2002) InGaP Power HBTs : Basic power cells for High Power transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lutz, C.R. ; Deluca, P.M. ; Stevens, K.S. ; Landini, B.E. ; Welser, R.E. ; Welty, R.J. ; Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masini, L. ; Golfarelli, A. ; Pozzoni, M. (2002) A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, Chin-Chun ; Wu, Tzung-Han ; Lu, Shey-Shi (2002) 28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Borgarino, M. ; Peroni, M. ; Cetronio, A. ; Fantini, F. (2002) Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. ; Di Martino, A. ; Marietti, P. ; Scotti, G. ; Tommasino, P. ; Trifiletti, A. (2002) A Non-Linear Statistical Model for GaAs FET Integrated Circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. ; Luzzi, R. ; Scotti, G. ; Tommasino, P. ; Trifiletti, A. (2002) Design Centering and Yield Optimisation of MMIC’s with Off-Chip Digital Controllers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M. ; Di Pasquale, Andrea ; Feudale, Marziale ; Giorgio, Agostino ; Perri, Anna Gina (2002) A Technique to Design MMICs for Space Applications and High Production Yields. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mazzanti, A. ; Verzellesi, G. ; Basile, A.F. ; Canali, C. ; Sozzi, G. ; Menozzi, R. (2002) Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Drevon, C. ; Monfraix, Philippe ; Paillard, Mathieu ; Schaffauser, Chloé ; Vendier, Olivier ; Cazaux, Jean-Louis (2002) New Trends for Microwave Packaging into Space-Borne Equipment. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reedy, Ronald E. (2002) Application of UTSi® CMOS On Sapphire to RF and Mixed Signal Requirements in Advanced Space Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lal, N. ; Nuttinck, S. ; Raghavan, A. ; Gebara, E. ; Venkataraman, S. ; Papapolymerou, J. ; Laskar, J. (2002) Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hu, Juntao ; Sun, Mike ; Ho, Wu-Jing ; Qin, Yue ; Li, Jiang ; Day, Ding (2002) Characterization and Modeling of InP DHBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sommet, R. ; Lopez, D. ; Quéré, R. (2002) Transient Analysis of Collector Current Collapse In Power HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Suh, Y.S. ; Han, K.-Y. ; Ahn, C.-H. ; Heo, D. (2002) Scalable Large Signal Modeling of InGaP/GaAs HBT for CAD Tools. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Avitabile, G. ; Chellini, B. ; Giannini, F. ; Limiti, E. (2002) A 18 GHz MMIC biquad active filter. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

de Boer, A. ; Hoogland, J.A. ; Suijker, E.M. ; van Wanum, M. ; van Vliet, F.E. (2002) Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. ; Collodi, G. ; Magrini, I. ; Manes, G. (2002) A Highly Linear Mixer For Zero-IF Bluetooth Receiver. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Manfrin, S.K. ; De Dominicis, M. ; Orengo, G. ; Giannini, F. ; Romero, M.A. (2002) Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Toshev, A. ; van der Graaf, M.W. ; de Hek, A.P. ; de Boer, A. ; Arnaudov, A. ; Vineshki, I. ; Kamenopolsky, S. ; Hlebarov, Z. (2002) Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Andersson, Kristoffer ; Eriksson, Joakim ; Rorsman, Niklas ; Zirath, Herbert (2002) C-Band Resistive SiC-MESFET mixer. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lossy, Richard ; Heymann, Peter ; Würfl, Joachim ; Chaturvedi, Nidhi ; Müller, Stefan ; Köhler, Klaus (2002) Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. ; Shealy, J.R. (2002) Floating-Body Effects in AlGaN/GaN Power HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Singhal, S. ; Brown, J.D. ; Borges, R. ; Piner, E. ; Nagy, W. ; Vescan, A. (2002) Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Ducatteau, D. ; Boudart, B. ; de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Aja, B. ; de la Fuente, L. ; Pascual, J.P. ; Cryan, M. ; Artal, E. (2002) Q-Band Monolithic GaAs PHEMT Low Noise Amplifiers: Comparative Study of Depletion and Enhancement Mode Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bollaert, S. ; Parenty, T. ; Wallart, X. ; Happy, H. ; Dambrine, G. ; Cappy, A. (2002) HEMT's Design for Applications beyond 100GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masuda, Toru ; Landen, Lars ; Zirath, Herbert (2002) Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schwörer, C. ; Tessmann, A. ; Leich, M. ; Leuther, A. ; Kudszus, S. ; Bessemoulin, A. ; Schlechtweg, M. (2002) Coplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bös, Thomas A. ; Satoh, Tomio ; Kajii, Kiyoshi ; Camargo, E. ; Hasegawa, Yuichi (2002) A Converter MMIC with Integrated LO Amplifier and Doubler. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cortese, P. ; Camiade, M. ; Domnesque, D. (2002) A tiny and fully integrated differential VCO for LMDS application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Di Paolo, F. ; Leuzzi, G. (2002) A Design approach for sub-harmonic generation or suppression in non-linear circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kallfass, Ingmar ; Zeuner, Marco ; Konig, Ulf ; Schumacher, Hermann ; Brazil, Thomas J. (2002) A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Myslinski, M. ; Schreurs, D. ; Wiatr, W. (2002) Development and Verification of a Non-Linear Look-Up Table Model for RF Silicon BJTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schreurs, D. ; Vandenberghe, S. ; Taher, H. ; Nauwelaers, B. (2002) ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Siligaris, Alexandre ; Vanmackelberg, Matthieu ; Dambrine, G. ; Vellas, Nicolas ; Danneville, F. (2002) A New Empirical Non-linear Model for SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P. (2002) EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ardouin, M. ; Bonte, B. ; Zaknoune, M. ; Théron, D. ; Cordier, Y. ; Bollaert, S. ; De Jaeger, J.C. (2002) Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. ; Tarraf, A. ; Salih, M. ; Albert, D. ; Schröter-Hohmann, H. ; Scholz, W. ; Kompa, G. ; Hillmer, H. ; Kassing, R. (2002) Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mitani, Y. ; Kasai, D. ; Horio, K. (2002) Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Rajeev Ojha, John ; Irmer, Sören ; Daleiden, Jürgen ; Hohmann, Heike ; Hillmer, Hartmut (2002) Reactive Ion Etching of InP using Hydrocarbons. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Subramaniam, S.C. ; Rezazadeh, A.A (2002) Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camargo, E. ; Virk, R.S. ; Hajji, R. ; Parker, S. ; Ohnishi, H. (2002) Design of a Broadband Amplifier for High Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. ; Bertazzi, F. ; Ghione, G. (2002) A novel finite-difference time-domain approach to the self-consistent simulation of high-speed TW-EAMs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. ; Limiti, E. ; Orengo, G. ; Serino, A. ; De Dominicis, M. (2002) A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hoffmann, S. ; Ojha, J.R. ; Thiede, A. ; Leblanc, R. ; Wroblewski, B. (2002) 7 VPP Modulator-Driver for 40 Gbit/s Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Wanum, M. ; van der Graaf, M.W. ; Hoogland, J.A.H. ; van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. ; Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. ; Naldi, C.U. ; Pirola, M. (2002) Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. ; Camprini, M. ; Collodi, G. ; Nair, V. ; Manes, G. ; Lewis, J. ; Goronkin, H. (2002) Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel FET for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. ; Leuzzi, G. ; Orengo, G. ; Colantonio, P. (2002) Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Martín-Guerrero, T.M. ; Esteban-Marzo, J. ; Castillo-Vázquez, B. ; Camacho-Peñalosa, C. (2002) A single relaxation-time non-quasi-static model for monolithic MESFET devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Santarelli, A. ; Zucchelli, G. ; Bellavista, A. ; Paganelli, R. ; Vannini, G. ; Filicori, F. (2002) Modelling of thermal dispersive effects in electron devices based on an equivalent voltage approach. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nightingale, S.J. ; Philippakis, M. ; Lovis, M. (2002) Considerations in the Design of Electro-Optic Modulators and Drivers for 40 Gb/s and Beyond. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vandersmissen, R. ; Schreurs, D. ; Vandenberghe, S. ; Borghs, G. (2002) Optical Control of a Backside Illuminated Thin-Film Metamorphic HEMT. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Vliet, F.E. ; van den Bogaart, F.L.M. (2002) Integrated InP circuits and Si TTD for analogue optical beamforming applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappy, A. ; Stievenard, D. ; Vuillaume, D. (2002) Nanotechnology : the Next Industrial Revolution ? In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meliga, Marina (2002) Semiconductor laser sources for datacom and telecom applications: recent trends. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hartnagel, Hans L. (2002) Millimeter-Wave and Terahertz Devices Based on MEMS Concepts. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maas, Stephen (2002) Mixer Technologies for Modern Microwave and Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cripps, Steve C. (2002) Ignoring the Obvious: Possibilities for On-chip Linearisation of RFIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Abdulrahman, B. ; Baudoin, G. (2002) Applying Digital Predistortion To Power Amplifiers Used in Third Generation Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camarchia, V. ; Bellotti, E. ; Goano, M. ; Kim, S. ; Ghione, G. (2002) Performance evaluation of submicron channel GaN vertical transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. ; Collodi, G. ; Toccafondi, C. ; Cignani, R. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) A Distributed Approach for the Characterisation of Parasitic Networks in Electron Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Condon, Emer ; Brazil, Thomas J. (2002) A Simplified Non-Linear Physical Model for High Frequency FET’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. ; Di Donato, A. ; Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giorgio, Agostino ; Perri, Anna Gina (2002) Design of Photonic Band-Gap Devices Using the Leaky Mode Propagation Method. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. ; Kompa, G. ; Hillmer, H. ; Kassing, R. (2002) Advantages of the New Generation Quasi-Monolithic Integration Technology (QMIT). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kwaspen, J.J.M. (2002) A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lee, C. S. ; Chang, E. Y. ; Biswas, D. ; Chang, Li ; Huang, J. S. (2002) Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Diodes on n-GaN. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. ; Di Donato, A. ; Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. ; Gebara, E. ; Maeng, M. ; Laskar, J. (2002) Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Saglam, M. ; Leo, E. ; Bozzi, M. ; Perregrini, L. ; Rodriguez-Gironés, M. ; Hartnagel, H.L. (2002) Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Virk, R.S. ; O'Neal, M. ; Camargo, E. ; Ragle, R. ; Notomi, S. ; Gentrup, M. ; Franzwa, E. ; Hicks, G. ; Fukugawara, T. (2002) A 43-Gbps Lithium Niobate Modulator Driver Module. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Zamanillo, J.M. ; Navarro, C. ; Perez-Vega, C. ; Garcia, J.A. ; Mediavilla, A. ; Tazon, A. (2002) New Large Signal Model of AlGaAs P-HEMT and GaAs MESFET Under Optical Illumination. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bousnina, S. ; Ghannouchi, Fadhel M. ; Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Stevens, K.S. ; Welser, R.E. ; Chaplin, M. ; Lutz, C.R. ; Pan, N. (2000) Ledge Design of InGaP Emitter GaAs Based HBTs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zamanillo, J.M. ; García, J.A. ; Mediavilla, A. ; Tazón, A. ; Pérez-Vega, C. (2000) A straightforward method for determining SiGe HBTs intrinsic elements of hibrid PI and TEE small-signal circuit models for multibias operation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Olavsbråten, Morten (2000) A Practical Method of Parameter Extraction for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bousnina, S. ; Ghannouchi, Fadhel M. ; Surridge, R. (2000) A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Garlapati, Akhil ; Prasad, Sheila (2000) Modeling of Current-gain Collapse in Multi-finger HBT ’s. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

DeLuca, P.M. ; Rodrigues, J. ; Han, B.-K. ; Pan, N. (2000) High Uniformity 6” InGaP/GaAs Heterojunction Bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cavassilas, N. ; Aniel, F. ; Nojeh, A. ; Adde, R. ; Zaknoune, M. ; Bollaert, S. ; Cordier, Y. ; Theron, D. ; Cappy, A. (2000) Electroluminescence of metamorphic In x Al 1-x As / In x Ga 1-x As HEMTs ON GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tkachenko, Y. ; Zhao, Y. ; Wei, C. ; Bartle, D. (2000) Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kim, S-O. ; Velling, P. ; Agethen, M. ; Reimann, Th. ; Prost, W. ; Tegude, F.-J. (2000) InP-BASED HBT with graded InGaAlAs BASE layer grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dillner, Lars ; Ingvarson, Mattias ; Kollberg, Erik ; Stake, Jan (2000) Heterostructure barrier varactor multipliers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hartnagel, H.L. ; Lin, C.I. ; Rodriguez, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000) Recent Development in Device Technology for Integrated THz-Circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mann, C.M. (2000) Micromachining in Terahertz technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Beaudin, G. (2000) Semi and super-conducting technologies for the millimeter and submillimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mueller, J.-E. ; Gerlach, U. ; Madonna, G.L. ; Pfost, M. ; Schultheis, R. ; Zwicknagl, P. (2000) A 3V small chip size GSM HBT power MMIC with 56% PAE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Emanuelsson, Thomas ; Thöresson, Stefan (2000) Design techniques for linear requirements for MMIC power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

de Hek, A.P. ; Hunneman, P.A.H. (2000) Small sized high-gain PHEMT high-power amplifiers for X-BAND applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bessemoulin, A. ; Marsetz, W. ; Baeyens, Y. ; Osorio, R. ; Massler, H. ; Hülsmann, A. ; Schlechtweg, M. (2000) Design of coplanar power amplifiers for MM-WAVE system applications including thermal aspects. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hue, X. ; Rogeaux, E. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. ; Boudart, B. ; Bonte, B. ; Crosnier, Y. (2000) 1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2000) Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schreurs, D. ; Tufillaro, N. ; Wood, J. ; Usikov, D. ; Barford, L. ; Root, D.E. (2000) Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Brabetz, T. ; Fusco, V.F. (2000) A new technique for noise figure measurements of millimetre-wave mixers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Heymann, P. ; Doerner, R. ; Rudolph, M. (2000) A universal measurement system for microwave power transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Gasquet, D. ; Nativel, L. ; Arcambal, C. ; Castagné, M. ; Dhondt, F. ; Mazari, B. ; Eudeline, P. (2000) Near-field measurement of microwave active devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mokerov, V.G. ; Fedorov, Yu.V. ; Hook, A.V. ; Velikoski, L.E. (2000) Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kauffmann, N. ; Blayac, S. ; André, P. ; Riet, M. ; Benchimol, J.L. ; Konczykowska, A. (2000) Technological and geometrical optimisation of InP HBT driver circuit. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Wieszt, A. ; Dietrich, R. ; Lee, J.-S. ; Vescan, A. ; Leier, H. ; Piner, E.L. ; Redwing, J.M. ; Sledzik, H. (2000) Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ziegler, Volker ; Gässler, Christoph ; Wölk, Claus ; Deufel, Reinhard ; Berlec, Franz-Josef ; Dickmann, Jürgen ; Käb, Norbert ; Schumacher, Hermann (2000) Monolithic integration of metamorphic pin DIODES and HFETs for heterointegrated MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Raynaud, C. ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; Grouillet, A. ; Martin, F. ; Dambrine, G. ; Vanmackelberg, M. ; Picheta, L. ; Mackowiak, E. ; Brut, H. ; Llinares, P. ; Sevenhans, J. ; Compagne, E. ; Fletcher, G. ; Flandre, D. ; Dessard, V. ; Vanhoenacker, D. ; Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Shinohara, K. ; Yamashita, Y. ; Hikosaka, K. ; Hirose, N. ; Kiyokawa, M. ; Matsui, T. ; Mimura, T. ; Hiyamizu, S. (2000) Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Lapin, V.G. ; Temnov, A.M. ; Krasnik, V.A. ; Petrov, K.I. (2000) GAAS Microwave offset gate self-aligned MESFETs and their applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dorofeev, A.A. ; Matveev, Yu.A. ; Chernavskii, A.A. (2000) Researches of two and three-output structures with effect of resonant tunneling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pozela, J. ; Pozela, K. ; Juciene, V. (2000) Decrease of Modfet channel conductivity with increasing sheet electron concentration. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ageeva, N. N. ; Bronevoi, I. L. ; Krivonosov, A. N. (2000) Interconnection between the picosecond stimulated recombination emission and the kinetics of dense hot electron-hole plasma in GaAs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Stenarson, Jörgen ; Wadefalk, Niklas ; Garcia, Mikael ; Angelov, I. ; Zirath, Herbert (2000) FET Noise Model Extraction Methods. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Weinreb, S. ; Gaier, T. ; Fernandez, J.E. ; Erickson, N. ; Wielgus, J. (2000) Cryogenic MMIC low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Jarosik, Norman (2000) The Use of Cryogenic HEMT Amplifiers in Wide Band Radiometers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Le Gallou, N. ; Barataud, D. ; Buret, H. ; Nebus, J.M. ; Ngoya, E. (2000) A novel measurement method for the extraction of dynamic Volterra Kernels of microwave power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Colantonio, P. ; Giannini, F. ; Leuzzi, G. ; Limiti, E. (2000) RF versus Microwave High Efficiency PA Design. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Meng, C.C. ; Chen, J. W. ; Chang, C.H. ; Chen, L.P. ; Lee, H.Y. ; Kuan, J.F. (2000) Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Costantini, A. ; Vannini, G. ; Filicori, F. ; Santarelli, A. (2000) Stability analysis of multi-transistor microwave power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, Franco ; Leuzzi, Giorgio ; Limiti, Ernesto ; Morgia, Fabio (2000) Optimum non-linear design of active microwave mixers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ferrero, A. ; Ghione, G. ; Mantione, F. ; Nespola, A. ; Pensa, S. ; Pirola, M. (2000) MM-wave on-wafer characterization of electro-optic devices: a new, simple approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cappelluti, F. ; Mathai, S. ; Wu, M.C. ; Ghione, G. (2000) Balanced Electroabsorption Modulator for High-Linearity, Low-Noise Microwave Analog Optical Link. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Merrar, A. ; Deshours, F. ; Algani, C. ; Nardini, C. ; Alquié, G. (2000) Direct digital modulation introduced via optically-controlled GAPS in active MMIC on GaAs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Gaye, M. ; Ajram, S. ; Maynadier, P. ; Salmer, G. (2000) An ultra-high switching frequency step-down DC-DC converter based on Gallium Arsenide devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Casu, M.R. ; Lanzieri, C. ; Masera, G. ; Piccinini, G. ; Zamboni, M. (2000) Digital Circuits in a Multi-Functional SAGFET MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sommet, R. ; Lopez, D. ; Quéré, R. (2000) Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ladbrooke, P.H. ; Bridge, J.P. (2000) Tracking sic FET developments with a FET simulator. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Goyal, Ravender ; Veremey, Vladimir (2000) Application of neural networks to efficient design of wireless and RF circuits and systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, F. ; Leuzzi, G. ; Orengo, G. ; Albertini, M. (2000) Artificial neural network approach for MMIC passive and active device characterization. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Erratico, Pietro (2000) Silicon technologies for RF applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Enz, Christian (2000) MOS Transistor Modeling for RF IC Design. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bietti, I. ; Svelto, F. ; Castello, R. (2000) Towards fully integrated CMOS RF receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Adirosi, F. ; Comparini, M.C. ; Leone, C. (2000) Application of Silicon-based RF IC devices in space communication systems &equipment. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cidronali, A. ; Collodi, G. ; Santarelli, A. ; Vannini, G. ; Toccafondi, C. (2000) Millimeter-wave FET modeling based on a frequency extrapolation approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ladbrooke, P.H. ; Bridge, J.P. ; Goodship, N.J. ; Battison, D.J. (2000) Improving understanding of the RF circuit behaviour of contemporary semiconductor devices through fast-sampling I (V)Curve tracer measurement. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cojocaru, Vicentiu I. ; Brazil, Thomas J. (2000) Low frequency dispersion effects on the input characteristics of microwave FETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sacconi, Fabio ; Di Carlo, A. ; Della Sala, F. ; Lugli, P. (2000) Modeling of GaN-based heterostructure devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mateos, Javier ; González, Tomas ; Pardo, Daniel (2000) Design optimisation of ultra-short gate HEMTS using MONTE CARLO simulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Comparini, M.C. ; Giubilei, R. ; Tranquilli, P. (2000) Microwave equipment for navigation Overlay (NOS) service. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hayashi, Hisanori ; Ui, Norihiko ; Saito, Toshiaki ; Fukaya, Jun (2000) A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Menozzi, R. (2000) Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ulian, Patrice ; Leveque, Hervé ; Recly, Agnes ; Cayrou, Jean-Christophe ; Cogo, B. ; Cazaux, Jean-Louis (2000) KA-BAND equipment assembly for multimedia satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Borgarino, M. ; Plana, R. ; Graffeuil, J. ; Cattani, L. ; Fantini, F. (2000) The Reliability of III-V semiconductor Heterojunction Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mottet, B. ; Sydio, c. ; Hartnagel, H.L. (2000) Pulsed Electrical Stress Techniques for the Detection of Non-thermal Lifetime-Problems with Semiconductor Devices and their IC’s. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rodwell, Mark ; Betser, Y. ; Jaganathan, S. ; Mathew, T. ; Sundararajan, PK ; Martin, S.C. ; Smith, R.P. ; Wei, Y. ; Urteaga, M. ; Scott, D. ; Long, S. (2000) Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.M. ; Hoke, W.E. ; McTaggart, R.A. ; Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ohata, Keiichi (2000) Millimeter-wave IC packaging technology-state of the art and future trends. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Touirat, M. ; Roger, M. ; Nuyen, L.T. ; Crosnier, Y. ; Salmer, G. (2000) 0.3µm-N-HIGFET capabilities for microwave power apllications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cetronio, A. ; Giannini, F. ; Lanzieri, C. ; Leuzzi, G. (2000) Self-aligned gate technology for analogue and digital GaAs integrated circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Frank Chau, H.-F. ; Chen, Zhengming ; Larry Wang, N.-L. ; Sun, Xiaopeng ; Lin, Barry (2000) Conversion of AlGaAs intoInGaP emitter HBT RF ICs for improved manufacturability. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Serru, V. ; Leclerc, E. ; Huin, F. ; Thuret, J. ; Denis, S. (2000) Very high power added efficiency PHEMT amplifiers for GSM and DCS 1800 applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Acciari, G. ; Giannini, F. ; Leuzzi, G. ; Saggio, G. (2000) Harmonic Solution for Periodic Waveforms of the BTE ’s for Microwave and Millimetre-Wave Active Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Colantonio, P. ; Giannini, F. ; Leuzzi, G. ; Limiti, E. (2000) IMD Performances of Harmonic Tuned Microwave Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Saglam, M. ; Bozzi, M. ; Domoto, C. ; Megej, A. ; Rodriguez–Girones, M. ; Perregrini, L. ; Hartnagel, H.L. (2000) ALGAAS HBV performance in frequency tripling at 255 GHZ. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Centurelli, F. ; Luzzi, R. ; Olivieri, M. ; Pennisi, S. ; Trifiletti, A. (2000) A novel topology for a HEMT negative current mirror. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Duchamp, G. ; Gauffre, S. ; Casadebaig, L. ; Pistre, J. (2000) A broadband microwave amplifier using multilayer technology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boudrissa, M. ; Delos, E. ; Cordier, Y. ; Theron, D. ; De Jaeger, J.C. (2000) Gate ionization current of an Enhancement-Mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Galwas, Bogdan A. ; Dawidczyk, Jaroslaw ; Chyzh, Aleksander ; Malyshev, Sergei A. (2000) Modelling of responsivity of INP-PIN photodiode for studying optical-microwave frequency conversion processes. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

David, S. ; Batty, W. ; Panks, A.J. ; Johnson, R.G. ; Snowden, C.M. (2000) Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bos, Thomas A. ; Camargo, E. (2000) Design of PHEMT Diodes for MMIC Mixer Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bue, F. ; Gaquière, C. ; Hue, X. ; Boudart, B. ; Crosnier, Y. ; De Jaeger, J.C. ; Carnez, B. ; Pons, D. (2000) Influence of recess and epilayers in the 26 – 40 GHz band HEMT’s intermodulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sleiman, A. ; Di Carlo, A. ; Tocca, L. ; Fiordiponti, R. ; Lugli, P. (2000) Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schreurs, D. ; Vandamme, E. ; van Dinther, C. (2000) Development and verification of a non-linea look-up table model for mosfets. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Blanck, H. ; Riepe, K.J. ; Doser, W. ; Auxemery, P. ; Pons, D. (2000) Industrial GaInP/GaAs Power HBT MMIC Process. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

De Dominicis, M. ; Giannini, F. ; Limiti, E. ; Saggio, G. (2000) Novel 4-points input pattern for large band noise measurements. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Giannini, Franco ; Graglia, Fabio ; Leuzzi, Giorgio ; Serino, Antonio (2000) Accurate microwave characterisation of power LD-MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Brookbanks, D. M. (2000) Self consistent modelling of PHEMT devices for millimeter wave small signal, noise and power applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Roques, Daniel ; Brasseau, F. ; Cogo, B. ; Soulard, Michel ; Cazaux, Jean-Louis (2000) A non quasi-static non-linear P-HEMT model operating up to millimetric frequencies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Costantini, A. ; Paganelli, Rudi ; Traverso, Pier Andrea ; Zucchelli, Giorgia ; Santarelli, Alberto ; Vannini, Giorgio ; Filicori, Fabio ; Monaco, Vito Antonio (2000) FMM and NDC technology-independent finite-memory nonlinear device models: ADS implementation and large-signal validation results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Laloue, A. ; Camiade, M. ; Valenza, M. ; Vildeuil, J.C. ; Nallatamby, J.C. ; Prigent, M. ; Obregon, J. ; Quéré, R. (2000) A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mediavilla, A. ; Tazon, A. ; Garcia, J.A. ; Zamanillo, J.M. ; Fernandez, T. (2000) A Coherent Small/Large Signal FET model Based on Neuronal Architectures 1. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Malmqvist, Robert ; Gustafsson, Andreas ; Danestig, Magnus ; Ouacha, Aziz ; Hagelin, Sven ; Rudner, Staffan (2000) Noise and Intermodulation Properties of Tunable Recursive Active MMIC Filters for Future Adaptive On-chip Radar Receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Kim, Dong-Wook ; Paek, Seung-Won ; Lee, Jae-Hak ; Jeon, Kye-Ik ; Lim, Chae-Rok ; Kwon, Young-Woo ; Chung, Ki-Woong (2000) Design and Fabrication of 77GHz HEMT Mixer Modules using Experimentally Optimized Antipodal Finline Transitions. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Camiade, M. ; Domnesque, D. ; Ouarch, Z. ; Sion, A. (2000) Fully MMIC-Based Front End for FMCW Automotive Radar at 77GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Hirachi, Yasutake ; Nakano, Hiroshi ; Kato, Akihito (2000) A Cost-Effective Receiver-Module with Built-in Patch Antenna for Millimeter-Wave Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vaudescal, O. ; Lefebvre, B. ; Couturier, A.M. ; Sevin, R. ; Dourlens, C. ; Quentin, P. (2000) A highly integrated MMIC chipset for 28 GHz LMDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rizk, Jad B. ; Muldavin, Jeremy B. ; Tan, Guan-Leng ; Rebeiz, Gabriel M. (2000) Design of X-Band MEMS Microstrip Shunt Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tan, Guan-Leng ; Rebeiz, Gabriel M. (2000) Microwave Absorptive MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mounaix, P. ; Arscott, S. ; David, T. ; Podevin, F. ; Mélique, X. ; Lippens, D. (2000) Microtechnologies for the monolithic fabrication of mm and submm non linear devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cai, Yongming ; Katehi, Linda P.B. (2000) Wide Band Series Switch Fabricated Using Metal As Sacrificial layer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Schaffner, James H. ; Loo, Robert Y. ; Quan, Clifton ; Allison, Robert C. ; Pierce, Brian M. ; Livingston, Stanley W. ; Schmitz, Adele E. ; Hsu, Tsung-Yuan ; Sievenpiper, Daniel F. ; Dolezal, Frank A. ; Tangonan, Gregory L. (2000) Microwave Components with MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Snowden, Christopher M. (2000) Very high volume GaAs MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Butel, Y. ; Adam, T. ; Cogo, B. ; Soulard, M. (2000) High efficiency LOW AM/PM 6W C-band MMIC power amplifier for a space radar program. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Alekseev, Egor ; Hsu, Shawn S.H. ; Pavlidis, Dimitris (2000) Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ichikawa, S. ; Satoh, T. ; Shimura, T. ; Betti-Berutto, A. ; Furukawa, Y. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J. (2000) A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Esashi, M. (2000) Microsystems by Bulk micromachining. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ponchak, George E. ; Simons, Rainee N. ; Scardelletti, Maximilian C. ; Varaljay, Nicholas C. (2000) Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Blondy, P. ; Baleras, F. ; Cros, D. ; Massit, C. ; Guillon, P. ; Zanchi, C. ; Lapierre, L. ; Sombrin, J. (2000) Integrated Millimeter-Wave Silicon Micromachined Filters. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Muldavin, Jeremy B. ; Rebeiz, Gabriel M. (2000) Novel Series and Shunt MEMS Switc Geometries for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bij de Vaate, J.G. ; Woestenburg, E.E.M. ; Witvers, R.H. ; Pantaleoni, R. (2000) Decade Wide Bandwidth Integrated Very Low Noise Amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zoschg, Dietmar ; Wilhelm, Wilhelm ; Knapp, Herbert ; Aufinger, K. ; Bock, Josef ; Meister, T.F. ; Wurzer, Martin ; Wohlmuth, Hans-Dieter ; Scholtz, Arpad L. (2000) Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Radisic, Vesna ; Weinreb, Sander ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Harvey, Duane ; Matloubian, Mehran ; Nguyen, Loi (2000) Ultra broadband low power MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Simon, H. ; Périchon, R.A (2000) A MMIC broad-band 90° power divider using a new all-pass active filter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Comparini, M.C. ; Feudale, M. ; Linkowski, J.R. ; Ranieri, P. ; Suriani, A. (2000) Fully integrated Ka/K band hermetic receiver module. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

George, Sebastien ; Drevon, C. ; Cazaux, Jean-Louis (2000) Flip-chip for space applications : Bonding reliability, DC and RF results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Mahmood, M.R. ; Hu, Z.R. (2000) Modelling of 3D Multilayer Coplanar Waveguide Structure with Incorporated Wideband Vertical Interconnection. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Monfraix, P. ; Adam, T. ; Lacoste, J.L. ; Drevon, C. ; Naudy, G. ; Cogo, B. ; Cazaux, Jean-Louis ; Roux, J.L. (2000) Design to reliability shielded vertical interconnection applied to microwave Chip Scale Packaging. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

McGarvey, B. ; Staiculescu, D. ; Tentzeris, M. ; Laskar, J. (2000) Adaptive Modeling of Complex Packaging Geometries Using Haar-based MRTD Algorithms. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zelley, C. A. ; Gould, P. A. ; Munday, P. D. ; Ashcroft, R. W. (2000) A J-band Transceiver MMIC with image rejection. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rasà, F. ; Celestino, F. ; Remonti, M. ; Gabbrielli, B. ; Quentin, P. (2000) 37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Marchand, Philippe ; Gouessant, Philippe (2000) Single Chip 58 GHz Radio Relay Front End Philippe Marchand, Philippe Gouessant. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rao, Nagaraja ; Parfitt, Andrew ; Dadello, Anna ; Ward, Damon ; Bird, Trevord (2000) A low noise KA-BAND down converter for space applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Alleaume, P.F. ; Auxemery, Ph. ; Viaud, J.P. ; Blanck, H. ; Lajugie, M. (2000) HBT technology for high power X band and broadband amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sajin, George ; Matei, Elena ; Marcelli, Romolo (2000) Microwave tunable straight edge resonator on silicon membrane. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Goffioul, M. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D. (2000) Microwave Integrated CMOS Oscillators on Silicon-on-insulator Substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Quentin, P. ; Gallien, A. ; Rasà, F. ; Gabbrielli, B. (2000) A GaAs MMIC chip-set for 10 to 15GHz radio-links applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boulanger, C. ; Lapierre, L. ; Gizard, F. ; Zanchi, C. ; Lesthievent, G. (2000) X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Dubuc, D. ; Parra, T. ; Graffeuil, J. (2000) Original topology of GaAs-PHEMT mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Boulanger, C. ; Lapierre, Luc ; Gizard, Francis (2000) New cold FET I-Q linear vector modulator topology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Devlin, L. ; Dearn, A.W. ; Beasley, P.D.L. (2000) A Monolithic, Dual Channel, 0.5 to 20GHz Limiter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Megej, A. ; Beilenhoff, K. ; Hartnagel, H.L. (2000) Fully Integrated PHEMT Voltage Controlled Oscillator with Very High Tuning Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Darbandi, A. ; Zoyo, M. ; Loval, L. ; Buret, H. ; Michard, F. (2000) 10W C-BAND highly efficient HYBRID-MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Landen, Lars ; Fager, Christian ; Zirath, Herbert (2000) Regenerative GaAs MMIC Frequency Dividers for 28 and 14 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Ang, K.S. ; Robertson, I.D. (2000) A Monolithic Double-balanced Upconverter for millimeter-wave Point-to-Multipoint Distribution Systems. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Tavernier, Christophe A. ; Henderson, Rashaunda ; Papapolymerou, John (2000) A Hybrid Micromachined High -Q Cavity Resonator at 5.8 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Biron, Frédéric ; Plaze, Jean-Philippe ; Billonnet, L. ; Cros, D. ; Jarry, Bernard ; Guillon, Pierre (2000) Design Procedure for Loss Compensation of Planar Microwave Filters Using Negative Resistances For Tuneable Bandstop and Bandpass Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Aja, B. ; de la Fuente, M.L. ; Garcia, J.A. ; Pascual, J.P. ; Artal, E. (2000) Resistive Monolithic Q-Band HEMT Mixer for MVDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Avitabile, G. ; Chellini, B. ; Giannini, F. ; Limiti, E. (2000) A novel high Q active inductor for millimeter wave applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

König, Frédy ; Shimizu, Haruo ; Takahashi, Hidenori ; Miyazawa, Shigemi ; Fukaya, Jun (2000) 4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Betti-Berutto, A. ; Poledrelli, C. ; Benelbar, R. ; Chen, S.T. ; Khandavalli, C. ; Satoh, T. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J. (2000) High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Sun, Y. ; Tieman, T. ; Pflug, H. ; Velthuis, W. (2000) A Fully Integrated Dual-Frequency Push-Push VCO for Wideband Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Roussel, L. ; Duperrier, C. ; Campovecchio, M. ; Lajugie, M. (2000) Two Octave Phemt Power Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vaudescal, O. ; Kabat, D. ; Couturier, A.M. ; Sevin, R. ; Dourlens, C. ; Quentin, P. (2000) A highly integrated MMIC Chipset for 40 GHz MVDS Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Pagani, M. ; Favre, G. ; Andersson, H. ; Carminati, M. (2000) A fully integrated monolithic local oscillator for LMDS radio link applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

de Boer, A. ; Mouthaan, K. (2000) GaAs mixed signal multi-function X-BAND MMIC with 7 bit phase and amplitude control and integrated serial to parallel converter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Grenier, K. ; Pons, P. ; Plana, R. ; Cazaux, Jean-Louis ; Boulanger, C. ; Parra, T. ; Graffeuil, J. (2000) Highly compact micro-machined coplanar bandpass filter. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Cidronali, A. ; Collodi, G. ; Deshpande, M. ; El-Zein, N. ; Goronkin, H. ; Manes, G. ; Nair, V. ; Toccafondi, C. (2000) A MMIC lumped element directional coupler with arbitrary characteristic impedance and its application. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Grzegorczyk, Tomasz M. ; Zurcher, Jean-François ; Renaud, Philippe ; Mosig, Juan R. (2000) Micromachined Horn Antenna Operating at 75 GHz. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bazin, G. ; Gilles, J.P. ; Crozat, P. ; Megherbi, Souhil (2000) RF MEMS: Silicon micro-mechanical capacitive structures. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Bouisse, Gerard (2000) High Power silicon MMIC design for wireless base stations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Zirath, Herbert ; Sakalas, Paulius ; Miranda, Jose Miguel (2000) Noise performance of a ground gate wideband MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Vindevoghel, J. ; Descamps, P. (2000) Narrowband active GaAs MMIC filters in K-band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

Rebeiz, Gabriel M. (2001) Phase Noise Analysis of MEMS-Based Phase Shifters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Sajin, George ; Marcelli, Romolo (2001) Micromachined magnetostatic wave resonators. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Mercier, D. ; Blondy, P. ; Cros, D. ; Guillon, P. (2001) Distributed MEMS tunable filters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Martoglio, L. ; Richalot, E. ; Picon, O. ; Lissorgues-Bazin, G. ; Vasseure, C. (2001) Low-Loss microstrip MEMS technology for RF passive components. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Marcelli, Romolo ; Dragoman, M. ; Neculoiu, Dan ; Giacomozzi, Flavio ; Muller, Alexandru ; Nitescu, N. (2001) 38 GHz Antennas on Micromachined Silicon Substrates. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Dehan, M. ; Vanhoenacker, D. ; Raskin, J.-P. (2001) Alternative architectures of SOI MOSFET for improving DC and microwave characteristics. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Ponchak, George E. ; Papapolymerou, John ; Tentzeris, Emmanouil M. (2001) Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Sakalas, P. ; Zirath, H. ; Litwin, A. ; Schröter, M. ; Matulionis, A. (2001) Size dependent influence of the pad and gate parasitic elements to the microwave and noise performance of the 0.35 µm n and p type MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Iversen, Christian Rye (2001) A MOS Model 9 Extension for GHz CMOS RF Circuit Design. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Margomenos, Alexandros ; Peroulis, Dimitrios ; Herrick, Katherine J. ; Katehi, Linda P. B. (2001) Silicon Micromachined Packages for RF MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Muldavin, Jeremy B. ; Rebeiz, Gabriel M. (2001) Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Grenier, K. ; Pons, P. ; Plana, R. ; Graffeuil, J. (2001) Bulk Silicon Micro-Machined MEM Switches For Millimeter-wave Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Blondy, P. ; Mercier, D. ; Cros, D. ; Guillon, P. ; Rey, P. ; Charvet, P. ; Diem, B. ; Zanchi, C. ; Lapierre, L. ; Sombrin, J. ; Quoirin, J.B. (2001) Packaged Millimeter Wave Thermal MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Nair, Vijay ; Deshpande, M. ; Lewis, Jonathan ; El-Zein, N. ; Ageno, Scott ; Kramer, Gary ; Kyler, Marilyn ; Hupp, Mike ; Goronkin, Herb (2001) Quantum MMIC (QMMIC) VCO’s for Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hammad, Hany F. ; Freundorfer, Alois P. ; Antar, Yahia M.M. (2001) Unconditional stabilization of CS and CG Mesfet Transistor. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hirata, M. ; Mimino, Y. ; Hasegawa, Y. ; Fukaya, J. (2001) High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Witvers, R.H. ; Bij de Vaate, J.G. (2001) DC to 11GHz Fully Integrated GaAs Up Conversion Mixer. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Hincelin, Guillaume (2001) A 2GHz Delta-Sigma Modulator implemented in InP HBT technology. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Parker, Anthony E. ; Rathmell, James G. (2001) Analysis of HEMT time-evolution characteristics. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Tkachenko, Y. ; Wei, C. ; Sprinkle, S. ; Gering, J. ; Lee, J. ; Kao, T. ; Zhao, Y. ; Ho, W. ; Sun, M. ; Bartle, D. (2001) Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Chigaeva, E. ; Wieser, N. ; Walthes, W. ; Grözing, M. ; Berroth, M. ; Roll, H. ; Breitschädel, O. ; Off, J. ; Kuhn, B. ; Scholz, F. ; Schweizer, H. (2001) Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Chigaeva, E. ; Wieser, N. ; Walthes, W. ; Grözing, M. ; Berroth, M. ; Roll, H. ; Breitschädel, O. ; Off, J. ; Kuhn, B. ; Scholz, F. ; Schweizer, H. (2001) Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Xiong, Yong Zhong ; Ng, Geok-Ing ; Wang, Hong ; Fu, Jeffrey S. ; K, Radhakrishnan (2001) Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Monfraix, P. ; Albo, L. ; Drevon, C. ; Cazaux, Jean-Louis ; Roux, J.L. (2001) Microwave glob top for space applications : A route to non hermiticity. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Tian, Zhengrong ; Free, Charles ; Barnwell, Peter ; Wood, James ; Aitchison, Colin (2001) Design of novel multilayer microwave coupled-line structures using thick-film technology. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Jourdain, A. ; Brebels, S. ; De Raedt, W. ; Tilmans, H. A. C. (2001) Influence of 0-level packaging on the microwave performance of RF-MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Jourdain, A. ; Brebels, S. ; De Raedt, W. ; Tilmans, H. A. C. (2001) Influence of 0-level packaging on the microwave performance of RF-MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Maruhashi, K. ; Ito, M. ; Ikuina, K. ; Hashiguchi, T. ; Matsuda, J. ; Domon, W. ; Iwanaga, S. ; Takahashi, N. ; Ishihara, T. ; Yoshida, Y. ; Izumi, I. ; Ohata, K. (2001) 60GHZ-band flip-chip MMIC modules for IEEE1394 wireless adapters. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Zagriadski, S.V. ; Tretyakov, S.A. (2001) The principle of symmetry of kinetic coefficients for media with ferrite inclusions and its application to nonreciprocal BI-ANISOTROPIC composites. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Condon, M. (2001) A new technique for the transient simulation of transmission lines inclusive of skin effect. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Vrancken, Mark ; Vandenbosch, Guy A. E. (2001) Hybrid Dyadic -MPIE Integral Equation Analysis of Passive Microwave Devices in Layered Media. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Tang, Yu-Lung ; Wang, Huei (2001) A 24.6-GHz MMIC HBT Triple-Push Oscillator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Kirilenko, A. ; Mospan, L. (2001) The simplest notch and bandstop filters based on the slotted strips. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Van Thielen, B. L. A. ; Vandenbosch, G.A. E. (2001) Fast method to include parasitic coupling in planar microwave circuits calculations. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Megej, A. ; Beilenhoff, K. ; Sydlo, C. ; Hartnagel, H. L. (2001) Fully Monolithically Integrated Wide-Band RF-Source. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Alphones, Arokiaswami ; Yee, Wong Kai (2001) Optimization of spiral inductor on silicon. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Nagy, Oliver ; Heide, Patric ; Springer, Andreas ; Weigel, Robert (2001) An Investigation of the Proximity Effect of Millimeter-Wave MMICs in Flip-Chip Configuration. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Railton, Chris J (2001) The choice of cell size and the use of pre-calculated correction factors in the analysis of planar circuits using FDTD and TLM. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Uusitupa, T. ; Viitanen, A. (2001) Mode transformer for hard-surface waveguides. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Fernandes, P. ; Raffetto, M. (2001) Reliability and performances of finite element CAD tools for the solution of microwave problems. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Shepherd, P. R. ; Taylor, C. ; Evans l, P. S. A. ; Harrison, D. J. (2001) Measurement and Modelling of MIC Components Using Conductive Lithographic Films. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Gevorgian, S. ; Berg, H. (2001) Line capacitance and impedance of coplanar-strip waveguides on substrates with multiple dielectric layers. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Buoli, Carlo ; Biffi, Giovanni ; Turillo, Tommaso ; Zingirian, Alessandro (2001) Thick metal plate insertion make FR4 multilayer board a simple carrier for RF power circuits. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Szczepaniak, Zenon R. ; Galwas, Bogdan A. ; Malyshev, Sergei A. (2001) Optically-switched microwave filter with the use of photovaractors in self-bias mode. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Siripon, N. ; Chongcheawchamnan, M. ; Robertson, I. D. (2001) Novel Sub-Harmonic Injection-Locked Balanced Oscillator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Sönmez, E. ; Trasser, A. ; Schad, K. -B. ; Abele, P. ; Schumacher, H. (2001) High Power Ultra Compact VCO with Active Reactance Concepts at 24 GHz. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Peroulis, Dimitrios ; Pacheco, Sergio P. ; Sarabandi, Kamal ; Katehi, Linda P. B. (2001) Alleviating the Adverse effects of Residual Stress in RF MEMS Switches. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Palazzaril, V. ; Placidi, P. ; Stopponi, G. ; Ciampolini, P. ; Alimenti, F. ; Roselli, L. ; Scorzoni, A. (2001) Characterization of CMOS Spiral Inductors. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Lenk, Friedrich ; Schott, Matthias ; Heinrich, Wolfgang (2001) Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Ofli, Erdem ; Vahldieck, Ruediger ; Amari, Smain (2001) Analysis and design of cross-coupled, folded e-plane filters with asymmetric responses. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Young, P. R. ; Collier, R. J. (2001) Exact solution of lossy asymmetrical coupled dielectric slab waveguides. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Prokopenko, Yu.V. ; Filippov, Yu.F. (2001) Spectral characteristics of anisotropic dielectric disk resonator with imperfect conducting end walls. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Loskot, E. ; Leppävuori, S. ; Kourbanov, A. ; Vendik, I. ; Lapshin, A. ; Jakku, E. (2001) A Miniaturized branc-line directional coupler on low temperature cofired ceramic board. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Kim, Chul-Soo ; Kim, Young-Tae ; Song, Seung-Hoon ; Jung, Wan-Soo ; Kang, Kwang-Yong ; Park, Jun-Seok ; Ahn, Dal (2001) A Design of Microstrip Directional Coupler for High Directivity and Tight Coupling. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Rosenberg, Uwe ; Bornemann, Jens ; Amari, Smain (2001) A compact and broadband 90-degree waveguide twist transformer for integrated waveguide subsystems. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Picard, Stephan D. ; Hettak, Khalifa ; Stubbs, Malcolm ; Wight, Jim S. (2001) Novel CPW-based Phase Shifter for LMCS/LMDS Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Marzolf, Eric ; Drissi, M’hamed (2001) Global design of an active integrated antenna for millimeter wave. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

McGarvey, B. ; Tentzeris, M. (2001) Coupling of Solid-State and Electromagnetic Equations for Simulation of Wireless Packaged Geometries. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Malyshev, S.A. ; Chizh, A. (2001) Modeling and characterization of photovaractor for microwave optoelectronics abstract. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

A cura di NON SPECIFICATO (2001) New method for computing transmission coefficient of integrated ferrite coplanar isolator. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Akyol, Ahmet Soydan ; Davis, Lionel Edward (2001) The Ferrite_dielectric interface and its applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Deleniv, A. ; Gashinova, M. ; Vendik, I. B. (2001) Sda full-wave analysis of boxed multistrip lines of finite thickness embedded in a layered lossy medium. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Ver Hoeye, S. ; Gutiérrez, L. ; Sancho, S. ; Suárez, A. ; González, P. (2001) Sub-harmonic and rational synchronization for phase-noise improvement. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Molchanov, Pavlo ; Mulyar, Pavel ; Podobna, Yulia ; Checkotun, Victoria (2001) Prospect of microwave negasensors application for ecological monitoring abstract. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Toner, B. ; Fusco, V.F. ; Alam, M.S. ; Armstrong, G.A. (2001) Sub-Micron CMOS Characterisation for Single Chip Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Vajha, Sasidhar ; Shastry, Prasad (2001) A novel proximity coupled active integrated antenna. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Zhu, Yu ; Cai, Q. ; Gerber, Jason (2001) Thermal resistance extraction of power transistor using electric field simulation. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Wollitzer, M. ; Thies, S. ; Schott, S. (2001) New Probing Technology Now Enables Impedance controlled On-Wafer Probing. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Callery, K. ; Lowbridge, P. (2001) Advances in Thin Film Techniques for Optical, Microwave and Millimeter wave Circuit Applications. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Yajian, Huang ; Alphones, Arokiaswami (2001) Frequency Dependence of HEMT Under Optical Illumination. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.

Massiot, Michel (2002) Evolution of LTCC technology for industrial applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ono, Naoko ; Sasaki, Fumio ; Arai, Kazuhiro ; Iseki, Yuji (2002) Characteristics of GaAs HEMTs with Flip-Chip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M.C. ; Leone, C. ; Montanucci, P. ; Tursini, M. (2002) HTCC based Ku/IF/BB Down Converter for satellite on board processing applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pinel, S. ; Lim, K. ; Maeng, M. ; Davis, M.F. ; Li, R. ; Tentzeris, M. ; Laskar, J. (2002) RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bessemoulin, A. ; Quentin, P. ; Thomas, H. ; Geiger, D. (2002) A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Duême, Ph. ; Dequen, Th. ; Funck, R. ; Caillon, B. ; Guerbeur, G. (2002) Broadband Active Phase Shifter GaAs MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Follmann, R. ; Langgartner, G ; Borkes, J. ; Wolff, I. (2002) Influence of backside metallization on a coplanar X-band LNA. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hwang, Yuh-Jing ; Wang, Huei ; Chu, Tah-Hsiung (2002) W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Miyaguchi, Kenichi ; Hieda, Morishige ; Tarui, Yukinobu ; Hatamoto, Mikio ; Kanaya, Koh ; Kasahara, Michiaki ; Takagi, Tadashi (2002) A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Acciari, G. ; Giannini, F. ; Limiti, E. ; Rossi, M. (2002) Baseband Predistortion Lineariser Using Direct Spline Computation. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Dubuc, Nicolas ; Duvanaud, Claude ; Bouysse, Ph. (2002) Analysis of the Doherty technique and application to a 900MHz power amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jenkins, William ; Khanifar, Ahmad (2002) Power Amplifier Linearisation Through Generation and Injection of Low-Frequency Second-Order Nonlinear Products. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kayano, Hiroyuki ; Iwata, Satoru ; Sato, Hiroaki ; Iseki, Yuji (2002) 2.5 GHz Wide Band Linear Amplifier with Feedforward Lineariser on a Board. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Buoli, Carlo ; Gadaleta, Vito Marco ; Turillo, Tommaso ; Zingirian, Alessandro (2002) A broadband microstrip to waveguide transition for FR4 multilayer PCBs up to 50 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Fujii, M. ; Kimura, I. ; Satoh, T. ; Imanaka, K. (2002) RF MEMS Switch with Wafer Level Package Utilizing Frit Glass Bonding. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jastrzebski, Adam K. (2002) A simple condition for maximum bandwidth of a chip packaged in an mm-wave waveguide. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reimann, M. ; Ulm, M. ; Buck, T. ; Müller-Fiedler, R. ; Heinrich, W. (2002) Vertical Silicon K-Band CPW Through-Wafer Interconnects. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Darbandi, A. ; Zoyo, M. ; Touchais, J.Y. ; Lévèque, H. (2002) 25W C-BAND highly efficient on board hybrid amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pagani, M. ; Argento, D. ; Bignamini, M. ; De Francesco, I. ; Frave, G. ; Meazza, A. ; Mornata, A, ; Palomba, F. (2002) Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ramachandran, V. ; Joseph, A.J. ; Johnson, J. B. ; Gallagher, M. D. ; Brandt, P. O. ; Tilly, L. ; Greenberg, D.R. ; Ansley, W.E. ; Gogineni, U. ; Harame, D.L. ; Dunn, J.S. (2002) A Fully-Manufacturable 0.5mm SiGe BiCMOS Technology for Wireless Power Amplifier Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hwang, Do-Kyeong ; Jeong, Si-Gyun ; Kwon, Young-Pil ; Jeong, Yong-Chae ; Kim, Chul-Dong (2002) Harmonic Reduction Amplifier using λ /4 High Impedance Bias Line with Defected Ground Structure (DGS). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Song, Young-Jean ; Oh, In-Ju ; Seo, Kyu-Jae ; Jeong, Yong-Chae ; Kim, Chul-Dong (2002) Analog Controlled Adaptive Feedforward Amplifier for IMT-2000 Band. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Colantonio, P. ; Giannini, F. ; Leuzzi, G. ; Limiti, E. (2002) Power balance in high efficiency PAs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hsu, Shawn S.H. ; Valizadeh, Pouya ; Pavlidis, Dimitris ; Moon, Jeong S. ; Micovic, M. ; Wong, Danny ; Hussain, T. (2002) Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Paganelli, R. ; Santarelli, A. ; Zucchelli, G. ; Costantini, A. ; Vannini, G. ; Filicori, F. (2002) A computationally efficient approach for the design of RF power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Chertouk, M. ; Chang, W.D. ; Yuan, C.G. ; Chen, C.H. ; Tu, D.W. (2003) The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin ; Boyd, E. ; Mclelland, Helen ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin ; Thayne, Iain (2003) mm-wave Performance of 50nm T-Gate AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistors with fT of 200 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mokerov, V.G. ; Velikovskii, L.E. ; Kanametova, Z.T. ; Kaminskii, V.E. ; Sazonov, P.V. ; Graul, J. ; Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Watanabe, Noriyuki ; Uchida, Masahiro ; Yokohama, Hideo ; Araki, Gako (2003) Influence of carbon sources on thermal stability of C-doped base InP/InGaAs heterojunction bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Subramaniam, Suba C. ; Rezazadeh, Ali A. (2003) He + -and Fe+ -ion bombardments in the electrical isolation of InP/InGaAs HBT Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. (2003) Large-signal compact diode noise modelling strategies for non-autonomous RF nonlinear applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. ; Giannini, F. ; Limiti, E. ; Serino, E. (2003) A novel noise model extraction technique for microwave and millimeter wave HEMT. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cibiel, G. ; Llopis, O. ; Escotte, L. ; Haquet, G. (2003) Devices selection for S to X bands low phase noise oscillator design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morigi, Damiana ; Masini, Leonardo ; Pozzoni, Massimo (2003) A Wideband Low Voltage Low Phase Noise 10-GHz SiGe Switchable VCO. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kaper, Val ; Thompson, Richard ; Prunty, Tom ; Shealy, James R. (2003) X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Balsi, Marco ; Centurelli, F. ; Forte, Alessandra ; Scotti, Giuseppe ; Tommasino, Pasquale ; Trifiletti, Alessandro (2003) Non-Linear Statistical Modelling of GaAs FET Integrated Circuits Using Principal Component Analysis Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Farina, M. ; Rozzi, Tullio (2003) Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Loo-Yau, J.R. ; Zúñiga-Juárez, J.E. ; Hirata-Flores, F.I. ; Reynoso-Hernández, J.A. (2003) An Improved GaAs FET Nonlinear Model Suitable for Intermodulation Analysis of Amplifiers,Switches and Resistive Mixers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. ; Loglio, G. ; Jargon, J. ; Remley, K.A. ; Magrini, I. ; DeGroot, D. ; Schreurs, D. ; Gupta, K.C. ; Manes, G. (2003) RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cabral, Pedro Miguel ; Borges Carvalho, Nuno ; Pedro, José Carlos (2003) An Integrated View of Nonlinear Distortion Phenomena in Various Power Amplifier Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

García, J.A. ; Malaver, E. ; Cabria, L. ; Gómez, C. ; Mediavilla, A. ; Tazón, A. (2003) Device-level Intermodulation Distortion Control on III-V FET ’s Abstract. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Forestier, S. ; Gasseling, T. ; Bouysse, P. ; Barataud, D. ; Quere, R. ; Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Acciari, G. ; Colantonio, P. ; De Dominicis, M. ; Rossi, M. (2003) A Fast AM/AM and AM/PM Characterization Technique. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Vliet, F.E. ; van Wanum, M. ; Roodnat, A.W. ; Alfredson, M. (2003) Fully-integrated wideband TTD core chip with serial control. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Detratti, Marco ; Chuan, Jeffrey ; Pascual, Juan Pablo ; García, José Luis ; Cabo, Javier (2003) E/D pHEMT Multi Frequency Generator GaAs MMIC for Aerospace Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brabetz, T. ; Fusco, Vincent F. (2003) Six-Port Receiver Front-End MMIC for V-Band MBS Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ueda, Hiro-omi ; Shinjo, Shintaro ; Nabeno, Yasuhiro ; Ono, Masayoshi ; Ohnakado, Takahiro ; Murakami, Takaaki ; Furukawa, Akihiko ; Hashizume, Yasushi ; Nishikawa, Kazuyasu ; Mori, Takeshi ; Yamakawa, Satoshi ; Oomori, Tatsuo ; Suematsu, Noriharu (2003) A 5GHz-Band On-Chip Matching CMOS MMIC Front-End. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Butterworth, Peter ; Charbonniaud, C. ; Campovecchio, M. ; Nallatamby, Jean-Christophe ; Monnier, Marc ; Lajugie, Monique (2003) A Balanced Sub-Harmonic Cold FET Mixer for 40GHz Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cao, Xin ; Thayne, Iain ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin (2003) High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Charbonniaud, C. ; De Meyer, S. ; Quéré, R. ; Teyssier, JP. (2003) Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Camprini, M. ; Magrini, Iacopo ; Collodi, G. ; Cidronali, A. ; Nair, Vijay ; Manes, Gianfranco (2003) A Hybrid Self-Oscillating Mixer Based on InP Heterojunction Interband Tunnel HEMT for Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sutton, William E. ; Pavlidis, Dimitris ; Lahrèche, Hacène ; Damilano, Benjamin ; Langer, Robert (2003) Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Centurelli, F. ; Golfarelli, Alessandro ; Guinea, Jesus ; Masini, Leonardo ; Morigi, Damiana ; Pozzoni, Massimo ; Scotti, Giuseppe ; Trifiletti, Alessandro (2003) A 10 Gb/s CMU in SiGe BiCMOS commercial technology with multistandard capability. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gu, Zheng ; Thiede, Andreas ; Möller, Lothar (2003) 20 Gbit/s Decision Feedback Loop for Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collins, Thomas E. ; Betti-Berutto, A. ; Long, Stephen I. (2003) A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kim, Moonjung ; Cha, Jung-Ho ; Shin, Seong-Ho ; Jeon, Soo-Kun ; Kim, Jaeho ; Kwon, Young-Se (2003) A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Polleux, J.L. ; Moutier, F. ; Billabert, A.L. ; Rumelhard, C. ; Sönmez, E. ; Schumacher, H. (2003) An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kasai, D. ; Kazami, Y. ; Mitani, Y. ; Horio, K. (2003) Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bertazzi, F. ; Cappelluti, F. ; Bonani, F. ; Goano, M. ; Ghione, G. (2003) A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mishra, Meena ; Muralidharan, R. ; Harsh, * ; Islam, S.S. ; Das, Mukunda B. (2003) The Effects of Extended Depletion Region on Noise Modeling of HEMT ’s. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cidronali, A. ; Collodi, G. ; Accillaro, C. ; Toccafondi, C. ; Vannini, G. ; Santarelli, A. ; Manes, G. (2003) A Scalable PHEMT Model Taking Into Account Electromagnetic and Electro-Thermal Effects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Neumann, S. ; Prost, W. ; Tegude, F.-J. (2003) InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Jin, Z. ; Neumann, S. ; Prost, W. ; Tegude, F.-J. (2003) Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sheng, H. ; Rezazadeh, A.A (2003) Study of temperature dependence of turn-on voltages IN III-V HBTS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Joe, Jin Hyoun ; Missous, Mohamed (2003) The Effects of Compositionally Graded Bases and Annealing on InGaP-GaAs HBTs Grown by MBE using a GaP Decomposition Source. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Deborgies, F. (2003) Microwave Technologies for Satellite Systems:an ESA Perspective. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Reedy, Ronald E. (2003) Perspective of RF CMOS/Mixed Signal Integration in Next Generation Satellite Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Auxemery, Ph. ; Pataut, G. ; Blanck, H. ; Doser, W. (2003) Power HBT reliability for space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Piloto, Andrew J. ; Yamada, Reiichi ; Burgess, Jerry ; Hall, Rick (2003) Advancement in T/R Module Interconnects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melczarsky, I. ; Costantini, A. ; Zucchelli, G. ; Paganelli, R.P. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2003) Statistical modelling of electron devices based on an equivalent-voltage approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zucchelli, G. ; Santarelli, A. ; Raffo, A. ; Vannini, G. ; Filicori, F. (2003) Influence of dispersive effects on large-signal models based on differential parameter integration. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giannini, F. ; Colantonio, P. ; Leuzzi, G. ; Orengo, G. ; Serino, A. (2003) Neural-Based Nonlinear Device Models for Intermodulation Analysis. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Parvais, B. ; Cerderia, A. ; Schreurs, D. ; Raskin, J.-P. (2003) Harmonic Distortion Characterization of SOI MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Malaver, Emigdio ; Garcıa, Jose Angel ; Tazon, Antonio ; Mediavilla, Angel (2003) Characterizing the Linearity Sweet-Spot Evolution in FET Devices. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Basaran, U. ; Berroth, M. (2003) Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, I. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Johansen, Tom K. ; Vidkjaer, Jens ; Krozer, Viktor (2003) Substrate Effects in SiGe HBT Modeling. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

SuH, Youngsuk ; Kim, I.S. ; Song, J.S. (2003) Optimal Parameter Extraction Scheme of Current Sources and Bias Dependent Elements for HBT by searching the whole unknown Parameter Space. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Issaoun, A. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Fujimoto, Shinichi ; Shuto, Hiroaki ; Matsuura, Mitsuhiro ; Yamamoto, Kazuya ; Ishikawa, Takahide ; Komaru, Makio ; Matsuda, Yoshio (2003) A New Methodology to Enable Parameterized Cell Transfer between Microwave CADs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio ; Di Paolo, F. (2003) Bifurcation Synthesis by means of Harmonic Balance and Conversion Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cignani, R. ; Costantini, A. ; Vannini, Giorgio (2003) VCO Behavioral Model Based on the Nonlinear-Discrete Convolution Approach. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Collodi, G. ; Cidronali, A. ; Toccafondi, C. ; Santarelli, A. ; Vannini, G. (2003) Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Werthof, Andreas (2003) 36-44 GHz HPAfor High Linearity Radio Systems. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schwörer, C. ; Tessmann, A. ; Leuther, A. ; Massler, H. ; Reinert, W. ; Schlechtweg, M. (2003) Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hamed, Karim W. ; Freundorfer, Alois P. ; Antar, Yahia M.M. (2003) A Novel 20 to 40 GHz Monolithic InGaP/GaAs HBT Double Balanced Mixer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lefebvre, B. ; Bessemoulin, A. (2003) 35-45 GHz Image Rejection Star Mixer for Up-and Down Conversion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Murata, Koichi ; Enoki, Takatomo ; Sugahara, Hirohiko ; Tokumitsu, Masami (2003) ICs for 100 Gbit/s Data Transmission. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Thayne, Iain ; Boyd, E. ; Cao, Xin ; Elgaid, K. ; Holland, Martin ; McLelland, Helen ; McEwan, Fiona ; Macintyre, Douglas ; Moran, David ; Stanley, Colin ; Thoms, Stephen (2003) Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Schlechtweg, Michael ; Tessmann, Axel ; Leuther, Arnulf ; Schwörer, Christoph ; Lang, Manfred ; Nowotny, Ulrich ; Kappeler, Otmar (2003) Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zirath, Herbert ; Grahn, Jan ; Rorsman, Niklas ; Mellberg, Anders ; Stake, Jan ; Angelov, I. ; Starski, Piotr (2003) InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Dambrine, G. ; Parenty, Thierry ; Bollaert, S. ; Happy, Henri ; Cappy, A. ; Mateos, Javier ; Nahri, Tapani ; Orlhac, Jean Claude ; Trier, Marc ; Baudet, Pierre ; Landry, Patrice (2003) An overview of low noise devices and associated circuits for 100-200 GHz space applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Rodwell, M. ; Scott, D. ; Urteaga, M. ; Dahlström, M. ; Griffith, Z. ; Wei, Y. ; Parthasarathy, N. ; Kim, YM ; Pierson, R. ; Rowell, P. ; Brar, B. (2003) InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Brown, April S. ; Jokerst, Nan Marie ; Brooke, Martin A. ; Kuech, Thomas ; Kuan, T.S. (2003) Materials to Microsystems:Heterogeneous Integration Technologies. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Paparo, Mario ; Erratico, Pietro ; Murari, Bruno (2003) Future Trends in Si Technology/ICs for RF Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Massaro, A. ; Mancini, V. ; Di Donato, A. ; Rozzi, T. (2003) Accurate Analysis of Polarization Coupling in Laminated Multilayered Thin Film Optical 3-D Waveguides. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Giorgio, Agostino ; Perri, Anna Gina (2003) Design of Photonic Crystals Devices with Defects. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zamanillo, J.M. ; Portilla, J. ; Navarro, C. ; Pérez-Vega, C. ; Mediavilla, A. (2003) Optical Control of a GaAs Chip MMIC Amplifier at S Band. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Iommi, Roberto ; Macchiarella, Giuseppe ; Meazza, Andrea ; Pagani, Maurizio (2003) A New Active Predistortion Linearizer Suitable for MMIC Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Hoffmann, Sebastian ; Thiede, Andreas ; Tommasino, Pasquale ; Trifiletti, Alessandro ; Vannucci, Antonello (2003) Measurement-based models of a 40 Gb/s modulator and its electrical driver for joint transmitter design. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Machác, Petr ; Žilka, Martin ; Výborný, ZdeneČk (2003) Pt/GaAs side wall Schottky diode. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

De Dominicis, M. ; Giannini, F. ; Scucchia, L. (2003) A Dual-Band MMIC Low frequency 180 ° Hybrid. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bielecki, Z. ; Kolosowski, W. ; Dufrene, R. ; Borejko, M. (2003) Low noise optical receivers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsenes, Petros ; Uzunoglu, Nikolaos (2003) A 4-bit 7.5 GHz A/D Converter. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gao, Jianjun ; Li, Xiuping ; Yang, Hong ; Boeck, Georg (2003) An Approach to Determine and for InP HBT Using Cutoff Mode Measurement. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Gomez–Garcıa, Roberto ; Briso–Rodrıguez, Cesar ; Mahfoudi, Mustapha ; Alonso, Jose I. (2003) MMIC Tunable Transversal Bandpass Active Filter at 9–12 GHz. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mheen, Bongki ; Park, Chan Woo ; Kim, Sang Hoon ; Kang, Jin-Yeong ; Hong, Songcheol (2003) Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Bok-Hyung ; Lim, Byeong-Ok ; Lee, Mun-Kyo ; Rhee, Jin-Koo (2003) fmax =433GHz from 0.1 ī-gate InGaAs/InAlAs/GaAs Metamorphic HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lien, Y. C. ; Chang, E. Y. ; Chang, H. C. ; Chu, L. H. ; Huang, K. W. ; Lee, H. M. ; Lee, C. S. ; Chen, S. H. ; Shen, P. T. (2003) Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Zlámal, Jan ; Myslík, Vladimír ; Machác, Petr (2003) Pd/In-based Ohmic Contacts to n-GaAs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Masud, Anowar ; Ferndahl, M. ; Zirath, Herbert (2003) A Variable gain MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van der Graaf, M.W. ; van Wanum, M. ; Maas, A.P.M. ; Suijker, E.M. ; Knight, A. ; Ludwig, M. (2003) L-Band MMICs for Space-based SAR system. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Osorio, Ricardo ; Klein, Mona ; Massler, H. ; Korvink, Jan G. (2003) Micromachined Strip Line with SU-8 as the Dielectric. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cavanna, T. ; Feudale, M. ; Ranieri, P. ; Suriani, A. (2003) Multifunction MMIC For Miniaturized Solid State Switch Matrix. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Comparini, M.C. ; Linkowski, J. R. ; Montanucci, P. ; Pizzuti, E. ; Suriani, A. ; Vasarelli, F. (2003) Low-cost, low-mass ltcc down converter for communication satellite payloads. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Di Marcantonio, U. ; Di Nardo, I. ; Tursini, M. ; Comparini, M.C. ; Novello, R. ; Leone, C. (2003) Integrated Substrate Packaging Based on LTCC and HTCC Technologies for Highly Integrated Space Equipment. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Simburger, Werner ; Kehrer, Daniel ; Tiebout, Marc ; Wohlmuth, Hans-Dieter ; Knapp, Herbert ; Wurzer, Martin ; Perndl, Werner ; Rest, Mirjana ; Kienmayer, Christoph ; Thuringer, Ronald ; Bakalski, W. ; Scholtz, Arpad L. (2003) CMOS and SiGe Bipolar Circuits for High-Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shur, Michael S. ; Ryzhii, Victor (2003) New Concepts for Submillimeter-Wave Detection and Generation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Viallon, Christophe ; Tournier, Eric ; Graffeuil, Jacques ; Parra, Thierry (2003) An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Shouxian, Mou ; Jianguo, Ma ; Seng, Yeo Kiat ; Anh, Do Manh (2003) An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sotero, Sonia ; Herrera, Amparo ; Cabo, Javier (2003) Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tsai, Ming-Da ; Liu, Ren-Chieh ; Lin, Chin-Shen ; Wang, Huei (2003) A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Long, Sabine ; Escotte, L. ; Graffeuil, Jacques ; Fellon, P. ; Roques, Daniel (2003) Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Morris, Arthur S. ; Cunningham, Shawn ; Dereus, Dana ; Schröpfer, Gerold (2003) High-Performance Integrated RF-MEMS: Part 1-The Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wang, Guoan ; Bacon, Andrew ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil M. (2003) Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Tassetti, Charles-Marie ; Lissorgues, Gaëlle ; Gilles, Jean-Paul (2003) Effects of a loop array layer on a micro-inductor for future RF MEMS Components. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Muller, Alexandru ; Konstantinidis, George ; Neculoiu, Dan ; Plana, Robert (2003) GaAs MEMS for Millimeter Wave Communications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Melle, S. ; Flourens, F. ; Dubuc, D. ; Grenier, K. ; Pons, P. ; Pressecq, F. ; Kuchenbecker, J. ; Muraro, J.L. ; Bary, L. ; Plana, R. (2003) Reliability Overview of RF MEMS Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ceylan, N. ; Mueller, J.E. ; Pittorino, T. ; Weigel, R. (2003) Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Le Gallou, N. ; Villemazet, J.F. ; Cogo, B. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. (2003) 10 W High Efficiency 14V HBT Power Amplifier for Space Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

van Bezooijen, André ; Prikhodko, Dima ; van Roermund, A.H.M. (2003) Biasing Circuits for Voltage Controlled GSM Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Wong, J. N. H. ; Aitchison, C. S. (2003) A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Adahl, Andreas ; Zirath, Herbert (2003) An 1 GHz Class E LDMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bessemoulin, A. ; Gaessler, C. ; Marschall, P. ; Quentin, P. (2003) A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Abele, P. ; Ojefors, E. ; Schad, K.-B. ; Sonmez, E. ; Trasser, A. ; Konle, J. ; Schumacher, H. (2003) Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Vandersmissen, Raf ; Schreurs, Dominique ; Carchon, G. ; Borghs, G. (2003) Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Chandrasekhar, Arun ; Stoukatch, Serguei ; Brebels, S. ; Balachandran, Jayaprakash ; Beyne, Eric ; De Raedt, W. ; Nauwelaers, Bart ; Poddar, Anindya (2003) Characterisation, Modelling and Design of Bond-Wire Interconnects for Chip-Package Co-Design Insertion Loss (dB). In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Pinel, S. ; Lim, K. ; DeJean, R.G. ; Li, L. ; Lee, C-H. ; Maeng, M. ; Davis, M.F. ; Tentzeris, M. ; Laskar, J. (2003) System-on-Package (SOP) Architectures for compact and low cost RF Front-end modules. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Park, Min ; Ahn, Hokyun ; Kang, Dong Min ; Ji, Honggu ; Mun, Jaekyoung ; Kim, Haecheon ; Cho, Kyoung Ik (2003) Single Supply,High Linearity,High Efficient PHEMT Power Devices and Amplifier for 2 GHz &5 GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Leuzzi, Giorgio ; Micheli, Claudio (2003) Variable-Load Constant-Efficiency Power Amplifier for Mobile Communications Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Seemann, Kay ; Ramberger, Suitbert ; Tessmann, Axel ; Quay, Rudiger ; Schneider, Joachim ; Rießle, Markus ; Walcher, Herbert ; Kuri, Michael ; Kiefer, Rudolf ; Schlechtweg, Michael (2003) Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Santarelli, Alberto ; Paganelli, Rudi Paolo ; Costantini, A. ; Vannini, Giorgio ; Filicori, Fabio (2003) A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Bao, Mingquan ; Li, Yinggang ; Cathelin, Andreia (2003) A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sonmez, E. ; Trasser, A. ; Abele, P. ; Schad, B. ; Schumacher, H. (2003) Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 um Sige HBT technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Lee, Sang-Heung ; Lee, Ja-Yol ; Lee, Seung-Yun ; Park, Chan Woo ; Kim, Sang Hoon ; Bae, Hyun-Chul ; Kang, Jin-Yeong ; Cho, Kyoung Ik (2003) A 5.8 GHz Mixer using SiGe HBT Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Kallfass, I. ; Gruson, F. ; Abele, P. ; Michelakis, K. ; Hackbarth, T. ; Hieber, K.-H. ; Müller, J. ; Schumacher, H. (2003) A SiGe HEMT Mixer IC with Low Conversion Loss. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Moreira, Alberto ; Krieger, Gerhard (2003) Spaceborne Synthetic Aperture Radar (SAR)Systems: State of the Art and Future Developments. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Caloz, Christophe ; Sanada, Atsushi ; Itoh, Tatsuo (2003) Microwave Circuits Based on Negative Refractive Index Material Structures. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Cignani, R. ; Costantini, A. ; Vannini, G. ; Filicori, F. ; Manfredi, L. (2002) Circuit Architectures for Low-Phase-Noise Oscillators. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nyberg, P. ; Vanhoja, A. (2002) Novel Variable Attenuator pHEMT MMIC's for Millimetre Wave Radio Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pospieszalski, Marian W. ; Wollack, Edward J. (2000) Ultra-low-noise,inp field effect transistor amplifiers for radio astronomy receivers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 October 2000, Paris.

Palomba, Francesco ; Pagani, Maurizio ; De Francesco, I. ; Meazza, Andrea ; Mornata, Alessandro ; Procopio, Gregorio ; Sivverini, Giuseppe (2003) Process-Tolerant High Linearity MMIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sugiyama, Hiroki ; Yokoyama, Haruki ; Watanabe, Kazuo ; Kobayashi, Takashi (2002) Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Anakabe, A. ; Collantes, J.M. ; Portilla, J. ; Jugo, J. ; Mons, S. ; Mallet, A. ; Lapierre, L. (2003) Analysis of Odd-Mode Parametric Oscillations in HBT Multi-Stage Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Ó hAnnaidh, Breandán ; Brazil, Thomas J. (2003) A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Coustou, A. ; Sie, M. ; Dubuc, D. ; Graffeuil, J. ; Tournier, E. ; Llopis, O. ; Plana, R. (2003) Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Sexton, James ; Missous, Mohammed (2003) Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Arena, M. ; Belperio, F. ; Calderone, L. ; Comparini, M.C. ; Leone, C. ; Simone, L. (2003) GaAs, Advanced RF CMOS and Silicon Components for Miniaturised Space Digital Receiver. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Mantovani, Andrea ; Rossini, Gianpaolo ; Zanghieri, Paolo (2002) Country size and the price of tradeables: is there any relationship beyond wishful thinking?

Nuttinck, S. ; Mukhopadhyay, R. ; Loper, C. ; Singhal, S. ; Harris, M. ; Laskar, J. (2005) Direct On-Wafer Non-Invasive Thermal Monitoring of AlGaN/GaN Power HFETs Under Microwave Large Signal Conditions. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Wohlgemuth, O. ; Müller, W. ; Link, T. ; Lederer, R. ; Paschke, P. (2005) 2-1 SiGe PRBS Generator IC up to 86 Gbit/s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Massaro, A. ; Pierantoni, L. ; Ciandrini, C. ; Rozzi, T. (2005) Analysis of Sensitivity for Low-Pass Multilayer Optical Filters. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Dearn, Andrew ; Richards, Tony ; Devlin, L. ; Yau, Wing ; Wu, Owen (2005) A Universal GaAs HBT PA with Active Bias Circuitry, Covering 4.9-6 GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Ponchak, George E. ; Schwartz, Zachary D. ; Alterovitz, Samuel A. ; Downey, Alan N. (2005) Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Rochette, Stéphane ; Villemazet, Jean-François ; Cazaux, Jean-Louis ; Populus, Thierry (2005) A highly integrated GaAs MMIC UHF band demodulator with four tunable quadrature phase shift IF channels. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam.

Bessemoulin, A. ; Grunenputt, J. ; Fellon, P. ; Tessmann, A. ; Kohn, E. (2005) Coplanar W-Band Low Noise Amplifier NMIC Using 100-nm Gate-length GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam, Amsterdam.

Bessemoulin, A. (2005) Design Data for Hot-via Interconnects in Chip Scale Packaged MMICs up to 110 GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.

Wei, C. J. ; Gering, J. ; Tkachenko, Y. (2004) Table-Based Dynamic PHEMT Model Using Delayed Capacitive Currents. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre 2004, Amsterdam.

Taher, H. ; Schreurs, D. ; Vestiel, E. ; Gillon, R. ; Nauwelaers, B. (2004) Nonlinear Modeling of Si/SiGe HBT Using ANN. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chow, Yut-Hoong ; Chong, Thomas (2004) A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Elkhou, M. ; Rousseau, M. ; Gerard, H. ; De Jaeger, J.C. (2004) Physical analysis of the breakdown phenomenon between sigle or double step gate recess HEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Heyen, Johann ; Jacob, Arne F. (2004) Anisotropic Conductive Adhesives for Millimeterwave Flipchip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bessemoulin, A. ; Parisot, M. ; Quentin, P. ; Saboureau, C. ; Van Heijningen, M. ; Priday, J. (2004) A 1-Watt Ku-band Power Amplifier MMIC using Cost-effective Organic SMD Package. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Siligaris, Alexandre ; Dambrine, G. ; Danneville, F. (2004) Non-Linear Modeling of the Kink Effect in Deep Sub-micron SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Milivojevic, B. ; Hoffmann, S. ; Thiede, A. ; Noé, R. ; Leblanc, R. ; Wroblewsk, B. (2004) Distributed Amplifiers for Transmitter and Receiver of a 40 Gbit/s DPSK Optical Transmission System. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kimura, Koichi ; Seki, Masato ; Matsumura, Nobuhisa ; Honjo, Kazuhiko (2004) Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre.

Horio, K. ; Yonemoto, K. (2004) Analysis of Drain Lag and Power Compression in GaN MESFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sassi, Zoheir ; Barelaud, Bruno ; Billonnet, L. ; Jarry, Bernard ; Marie, Hervé ; De La Torre, Alain ; Nguyen Trieu, Luan Le ; Gamand, Patrice (2004) Fully Differential 2 GHz 2.7V 4th-Order Low-Noise Active Bandpass Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Darfeuille, Sébastien ; Barelaud, Bruno ; Billonnet, L. ; Jarry, Bernard ; Marie, Hervé ; De La Torre, Alain ; Nguyen Trieu, Luan Le ; Gamand, Patrice (2004) A Differential-Based Single-Ended 2 GHz Low-Noise Recursive Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Van Heijningen, M. ; Priday, J. (2004) Novel Organic SMD Package for High-Power Millimeter Wave MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kärkkäinen, Mikko ; Varonen, Mikko ; Kantanen, Mikko ; Karttaavi, Timo ; Kangaslahti, Pekka ; Halonen, Kari (2004) Low Noise Amplifiers for 94 GHz Cloud Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Matiss, A. ; Janssen, G. ; Bertenburg, R. M. ; Brockerhoff, W. ; Tegude, F.J. (2004) Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Leung, Lydia L. W. ; Zhang, Jinwen ; Hon, Wai Cheong ; Chen, Kevin J. (2004) High-Performance CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on Low- Resistivity Silicon Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, Hong-Yeh ; Wang, Huei ; Wang, Yu-Chi ; Chao, P. C. ; Chen, Chung-Hsu (2004) A 22-GHz Ultra Low Phase Noise Push-Push Dielectric Resonator Oscillator Using MMICs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Galière, J. ; Valard, J.L. ; Estèbe, E. (2004) Millimetre-wave MMIC packaging compatible with surface-mount technology (SMT). In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tsai, Ming-Da ; Wang, Huei ; Kuan, Jui-Feng ; Chao, Chih-Ping (2004) A Miniature 4.3-7-GHz, 1-V CMOS LNA with Helical Inductors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lin, Chin-Shen ; Tsai, Ming-Da ; Wang, Huei ; Wang, Yu-Chi ; Chen, Chung-Hsu (2004) A Monolithic HBT Broadband Amplifier Using Modified Triple Darlington Configuration. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre, Amsterdam.

Wichmann, N. ; Duszynski, I. ; Parenty, T. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A. (2004) Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Borgarino, M. ; Bogoni, A. ; Fantini, F. ; Peroni, M. ; Cetronio, A. (2004) Semi-Automated Experimental Set-Up for CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Parvais, B. ; Raskin, J.P. (2004) Analytical Expressions for Distortion of SOI MOSFETs using the Volterra Series 3D. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Issaoun, A. ; Kouki, A. B. ; Ghannouchi, F. M. (2004) A User Compiled Large Signal Model for GaAs Heterojunction Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Minko, A. ; Hoel, V. ; Dambrine, G. ; Gaquiere, C. ; Dejaeger, J-C ; Cordier, Y. ; Semond, F. ; Natali, F. ; Massies, J. ; Lahreche, H. ; Wedzikowski, L. ; Langer, R. ; Bove, P. (2004) RF Noise and Power Performances of AlGaN/GaN on Si(111) Substrates making of low cost modules. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rottenberg, X. ; Nauwelaers, B. ; De Raedt, W. ; Tilmans, H. A. C. (2004) Distributed dielectric charging and its impact on RF MEMS devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tkachenko, Y. ; Boerman, S. ; Chung, H-C. ; DiCarlo, P. ; Gerard, M. ; Gering, J. ; Hu, J. ; Klimashov, A. ; Kwok, K. ; Reginella, P. ; Sprinkle, S. ; Wei, C. ; Yang, Y. (2004) Large-Signal Nonlinear Model of a Highly Integrated Quad-Band GSM Transmit Front-End Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Phan, Khanhtran ; Morkner, Henrik (2004) A High Performance Yet Easy to Use Low Noise Amplifier in SMT Package for 6 to 20 GHz Low Cost Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, Christophe ; Sommet, Raphael ; Quéré, Raymond ; Dueme, Ph. (2004) Nonlinear thermal reduced model for Microwave Circuit Analysis. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Fujii, Kohei ; Morkner, Henrik ; Brown, Edward (2004) A Novel Low Cost Enhancement Mode Power Amplifier MMIC in SMT Package for 7 to 18 GHz Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nam, Joongjin ; Kim, Youngwoong ; Shin, Jin-Ho ; Kim, Bumman (2004) A CDMA and AMPS Handset Power Amplifier based on Load Modulation Technique. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krämer, M.C.J.C.M. ; Hoskens, R.C.P. ; Jacobs, B. ; Kwaspen, J.J.M. ; Suijker, E.M. ; de Hek, A.P. ; Karouta, F. ; Kaufmann, L.M.F. (2004) Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Shirokov, Mikhail S. ; Gray, Eric S. ; Little, Duncan A. ; Hau, Gary ; James, A. ; Roche, Jr. (2004) Low-Cost Wide-Range Low-Current Consumption Linear HBT MMIC Power Amplifier for Portable 2.4GHz WLAN Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wu, L. ; Tao, R. ; Basaran, U. ; Luger, J. ; Dettmann, I. ; Berroth, M. (2004) The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Charbonniaud, C. ; Gasseling, T. ; De Meyer, S. ; Quéré, R. ; Teyssier, J.P. ; Barataud, D. ; Nébus, J.M ; Martin, T. ; Grimbert, B. ; Hoel, V. ; Caillas, N. ; Morvan, E. (2004) Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sen, P. ; Park, H. -M. ; Mukhopadhyay, R. ; Srirattana, N. ; Raghavan, A. ; Laskar, J. ; Cressler, J. D. ; Freeman, G. (2004) A Broadband, Small-Signal SiGe HBT Model for Millimeter-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Raghavan, Anand ; Jalan, Umesh ; Chakraborty, Sudipto ; Lee, Chang-Ho ; Laskar, Joy ; Chen, Emery ; Lee, JongSoo ; Cressler, J. D. ; Freeman, Greg ; Joseph, Alvin (2004) A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chang, S.W. ; Chang, E. Y. ; Chen, K.S ; Hsieh, T. L. ; Tseng, C. W. (2004) A Gold Free Fully Copper Metallized InGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lamesa, Alessandro ; Giolo1, Giancarlo ; Limiti, Ernesto (2004) Design Procedure and Performance of two 0.5-20 GHz GaAs PHEMT MMIC Matrix Distributed Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hakala, Ilkka ; Gharavi, Leila ; Kaunisto, Risto (2004) Chireix Power Combining with Saturated Class-B Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kallfass, I. ; Schick, C. ; Schumacher, H. ; Brazil, T. (2004) A Universal Large-Signal Model for Hetero Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Maneux, C. ; Belhaj, M. ; Labat, N. ; Touboul, A. ; Riet, M. ; Kahn, M. ; Godin, J. ; Bove, Ph. (2004) InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

SION, A. ; CORTESE, P. ; GOURDON, C. ; CAMIADE, M. ; NALLATAMBY, J.C. ; PRIGENT, M. ; OBREGON, J. (2004) Low Phase Noise 2 GHz HBT Push-Push VCO Based on an Advanced Low Frequency Noise Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Chartier, E. ; Piotrowicz, S. ; Jacquet, J.C. ; Floriot, D. (2004) Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Boyd, E. ; Cao, Xin ; Thoms, S. ; Moran, D.A.J. ; Eglaid, K. ; Holland, M. ; Stanley, C.R. ; Thayne, I. G. (2004) Fabrication of Very High Performance 50nm T-gate metamorphic GaAs HEMTs with exceptional uniformity. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Masuda, Satoshi ; Kira, Hidehiko ; Hirose, Tatsuya (2004) 110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Giannini, F. ; Limiti, E. ; Serino, A. ; Dainelli, V. (2004) A Medium-Power Low-Noise Amplifier For X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Clifton, J. C. ; Albasha, L. ; Lawrenson, A. ; Eaton, A. (2004) Meeting the Needs of Cellular Dual-Mode (EGPRS/3G) Power Amplifiers with a Unique J-PHEMT Process and Novel Control Architecture. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Soubercaze-Pun, G. ; Tartarin, J.G. ; Bary, L. ; Delage, S. L. ; Plana, R. ; Graffeuil, J. (2004) Carrier’s transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lefebvre, B. ; Bessemoulin, A. ; Schwoerer, C. ; Lehoue, V. ; Vaudescal, O. (2004) An Highly Integrated Double Conversion Mixer MMIC for Ka-band VSAT Communication Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Conte, G. ; Donati Guerrieri, S. ; Bonani, F. ; Ghione, G. (2004) Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mellberg, Anders ; Malmkvist, Mikael ; Grahn, Jan ; Rorsman, Niklas ; Zirath, Herbert (2004) Integration of components in a 50 nm InGaAs- InAlAs-InP HEMT process with pseudomorphic In0.65Ga0.35As channel. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cojocari, O. ; Biber, S. ; Mottet, B. ; Sydlo, C. ; Hartnagel, H.-L. ; Schmidt, L.-P. (2004) IF-noise improvement of the GaAs Schottky diodes for THz-frequency mixer applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Florian, C. ; Pirazzini, M. ; Vannini, G. ; Santarelli, A. ; Borgarino, M. ; Angelone, C. ; Paparo, M. ; Filicori, F. (2004) C Band DROs Using Microwave Bipolar Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Darcel, L. ; Duême, P. ; Funck, R. ; Alquié, G. (2004) A new Methodology for achieving MMIC Bandpass Active Filters at High Frequencies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lonac, J. A. ; Santarelli, A. ; Paganelli, R. ; Filicori, F. (2004) Numerically Efficient Design of Highly Linear Microwave Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Moran, D.A.J. ; Boyd, E. ; Elgaid, K. ; McLelland, H. ; Stanley, C.R. ; Thayne, I.G. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Dharmasiri, C. N. ; Vo, V. T. ; Koon, K. A. ; Rezazadeh, A. A. (2004) Analysis of Temperature Dependence of GaAs DHBT Terminal Resistances Using the Observed Kink Effect. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Touhami, R. ; Yagoub, M.C.E. ; Baudrand, H. (2004) Extraction Of The Series-Resistance Of Au-Oxide-n- InP Structures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Denis, David ; Hunter, Ian ; Snowden, Christopher M. (2004) Comprehensive Characterization and Modelling of Micro-wave Power HEMTs for Large-Signal Power Amplifier Design. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Wu, Tzung-Han ; Meng, Chinchun ; Wu, Tse-Hung ; Huang, Guo-Wei (2004) A 5.7 GHz 0.35 m SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meng, Chinchun ; Wu, Tzung-Han ; Wu, Tse-Hung ; Huang, Guo-Wei (2004) A Fully Integrated 5.2 GHz Double Quadrature Image Rejection Gilbert Downconverter Using 0.35 µm SiGe HBT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Choi, Sunkyu ; Kim, Taeho ; Lee, Bangkeun ; Yang, Kyounghoon (2004) 5-GHz VCO with a wide tuning range using an InPbased RTD/HBT technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Dong Ho ; Ko, Sangsoo ; Jeon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol (2004) A Distributed Model of Four-Port Monolithic Transformer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Moon-Que ; Moon, Seong-Mo ; Ryu, Keun-Kwan ; Jang, Dong-Phil ; Yom, In-Bok (2004) Subharmonically Pumped Image Rejection Mixer for K-band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Winkler, Wolfgang ; Borngräber, Johannes (2004) LC-Oscillator for 94 GHz Automotive Radar System Fabricated in SiGe:C BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tempel, Mike ; Huber, Meik ; Boeck, Georg (2004) A 2 GHz Fully Balanced Switching HBT Mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Elgaid, K. ; McLelland, H. ; Ferguson, S. ; Cao, Xin ; Boyd, E. ; Moran, D. ; Thoms, S. ; Zhou, H. ; Wilkinson, C.D.W. ; Stanley, C.R. ; Thayne, I. G. (2004) An Array-Based Design Methodology for the Realisation of 94GHz MMMIC Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Johansen, Tom K. ; Vidkjær, Jens ; Krozer, Viktor (2004) A Highly Integrated GaAs pHEMT Active Mixer for Wideband SAR Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ziroff, A. ; Nalezinski, M. ; Menzel, W. (2004) Improved Performance of Flip Chip assembled MMIC Amplifiers on LTCC using a Photonic Bandgap Structure. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rudolph, M. ; Schnieder, F. ; Heinrich, W. (2004) Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Ducatteau, D. ; Werquin, M. ; Gaquière, C. ; Théron, D. ; Martin, T. ; Delos, E. ; Grimbert, B. ; Morvan, E. ; Caillas, N. ; Hoël, V. ; De Jaeger, J.C. ; Delage, S. L. (2004) Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meliani, Chafik ; Rudolph, Matthias ; Hilsenbeck, Jochen ; Heinrich, Wolfgang (2004) A GaAs-HBT Broadband Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmission. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sayed, Ahmed ; von der Mark, Stefan ; Boeck, Georg (2004) An Ultra Wideband 5 W Power Amplifier Using SiC MESFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Werquin, M. ; Vellas, N. ; Guhel, Y. ; Ducatteau, D. ; Boudart, B. ; Pesant, J.C. ; Bougrioua, Z. ; Germain, M. ; De Jaeger, J.C. ; Gaquière, C. (2004) Performances of AlGaN/GaN HEMTs in Planar Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Smith, P. ; Thayne, I.G. (2004) An Array-Based Design Methodology for 10 GHz SiGe LC Oscillators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Gómez, C. ; García, José A. ; Mediavilla, A. ; Tazón., A. (2004) A High Efficiency Rectenna Element using E-pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lee, Kyung Ai ; Lee, Dong Ho ; Park, Hyun-Min ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Yoo, Hyung-mo ; Hong, Songcheol (2004) A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Romanò, Luca ; Minerva, Vito ; Cavalieri d’Oro, Silvia ; Politi, Marco ; Samori, Carlo ; Pagani, Maurizio (2004) Low Phase Noise, Very Wide Band SiGe Fully Integrated VCO. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Colantonio, P. ; Giannini, F. ; Limiti, E. ; Marrocco, G. (2004) A Method for PA-Patch Antenna Design Optimisation Oriented to Maximum Efficiency. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Meazza, Andrea ; Pagani, Maurizio ; Iommi, Roberto ; Macchiarella, Giuseppe (2004) MMIC implementation of a new active pre-distortion scheme for Highly Linear Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kärnfelt, C. ; Zirath, H. ; Starski, J. P. ; Rudnicki, J. (2004) Flip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Giannini, F. ; Colantonio, P. ; Orengo, G. ; Serino, A. (2004) Distortion Characterization and Neural Network Modeling for Microwave Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Johansen, Tom K. ; Vidkjær, Jens ; Krozer, Viktor (2004) Consistent Large-Signal Modeling of SiGe HBT Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Galloo, J.S. ; Roelens, Y. ; Bollaert, S. ; Pichonat, E. ; Wallart, X. ; Cappy, A. ; Mateos, J. (2004) Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Zirath, Herbert ; Kozhuharov, Rumen ; Ferndahl, M. (2004) A balanced InGaP-GaAs Colpitt-VCO MMIC with ultra-low phase noise. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Sim, Sang-Hoon ; Ko, Sangsoo ; Hong, Songcheol (2004) A K-Band Push-Push VCO MMIC using embedded frequency doubling mechanism. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Camprini, M. ; Cidronali, A. ; Accillaro, C. ; Magrini, I. ; Loglio, G. ; Collodi, G. ; Jargon, J. ; Manes, G. (2004) Identification of a Strongly Nonlinear Device Compact Model Based on Vectorial Large Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Rennane, A. ; Bary, L. ; Graffeuil, J. ; Plana, R. (2004) DC and Low Frequency Noise Characteristics of SiGe n-MODFET’s. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Accillaro, C. ; Cidronali, A. ; Zani, F. ; Loglio, G. ; Usai, M. ; Collodi, G. ; Camprini, M. ; Magrini, I. ; Manes, G. (2004) Thermal Memory Effects on the Linearity of a GaAs PHEMT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Loglio, G. ; Cidronali, A. ; Accillaro, C. ; Usai, M. ; Magrini, I. ; Camprini, M. ; Collodi, G. ; Manes, G. (2004) On the experimental calculation of the conversion matrix for sub-harmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cappelluti, F. ; Pirola, M. ; Ghione, G. (2004) A measurement-based distributed large-signal E/O circuit model for high-speed electroabsorption modulators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kaper, Val ; Thompson, Richard ; Prunty, Tom ; Shealy, James R. (2004) Monolithic AlGaN/GaN HEMT SPDT switch. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kim, Dae-Hyun ; Noh, Hun-Hee ; Yeon, Seong-Jin ; Lee, Jae-Hak ; Seo, Kwang-Seok (2004) High fT 30nm In0.7GaAs HEMT’s Beyond Lithography Limitations. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kim, Hong-Teuk ; Lee, Ki-Hong ; Choi, Hyung-Kyu ; Choi, Ji-Youn ; Lee, Kyung-Hak ; Kim, Jin-Pil ; Ryu, Gi-Hyon ; Jeon, Yong-Joon ; Han, Choong-Soo ; Kim, Keechul ; Lee, Kyungho (2004) High Efficiency and Linear Dual Chain Power Amplifier without/with Automatic Bias Current Control for CDMA Handset Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Jacquet, J-C ; Aubry, R. ; Gérard, H. ; Delos, E. ; Rolland, N. ; Cordier, Y. ; Bussutil, A. ; Rousseau, M. ; Delage, S. L. (2004) Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krausse, D. ; Quay, R. ; Tessmann, A. ; Massler, H. ; Leuther, A. ; Merkle, T. ; M uller, S. ; Schw orer, C. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G. (2004) Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bolognesi, C.R. ; Liu, H.G. ; Watkins, S.P. (2004) The Fabrication and Characterization of High- Performance InP DHBTs (Invited). In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Seidel, Robert V. ; Graham, Andrew P. ; Duesberg, Georg S. ; Liebau, Maik ; Unger, Eugen ; Kreupl, Franz ; Hoenlein, Wolfgang (2004) Faster and Smaller with Carbon Nanotubes? In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Coromina, F. ; Deborgies, F. ; Emma, F. ; Gatti, G. (2004) On-board Applications of Active Microwave Technologies to GALILEO and other European Space Programs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bird, Neil. C. ; Sanduleanu, Mihai A.T. (2004) Towards Integrated Transceivers in mm-Wave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Anwar, Asif ; Entwistle, Stephen ; Taylor, Chris (2004) Strategy Analytics Insight Current Status & Future Prospects for GaAs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Gough, R. ; Archer, J. ; Roberts, P. ; Moorey, G. ; Graves, G. ; Bowen, M. ; Kanoniuk, H. (2004) MMICs for the Australia Telescope Millimetre-Wave Receiver System. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cremonini, A. ; Carbonaro, L. ; Mariotti, S. ; Natale, V. ; Nesti, R. ; Orfei, S. ; Roda, J. ; Tofani, G. (2004) Indium Phosphide MMIC Low Noise Amplifier and related cryogenically applications in a Radioastronomical Focal Plane Array Receiver. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Witvers, R.H. ; Bij de Vaate, J.G. ; Sarmasanu, A. (2004) MMIC GaAs and InP Very Low Noise Amplifier Designs for the Next Generation Radio Telescopes. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre, Amsterdam.

Klumperink, Eric A.M. ; Bruccoleri, Federico ; Stroet, Peter ; Nauta, Bram (2004) Amplifiers Exploiting Thermal Noise Canceling: A Review. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Risacher, Christophe ; Sundin, Erik ; Robles, Victor Perez ; Pantaleev, Miroslav ; Belitsky, Victor (2004) Low Noise and Low Power Consumption Cryogenic Amplifiers for Onsala and Apex Telescopes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Würfl, Joachim ; Schlechtweg, Michael (2004) Frontiers of III-V Compounds and Devices 0,1. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Teyssier, Jean-Pierre ; Barataud, D. ; Charbonniaud, C. ; De Groote, Fabien ; Mayer, Markus ; Nébus, Jean-Michel ; Quéré, Raymond (2004) Large Signal Characterization of Microwave Power Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Alabadelah, Ahmed ; Fernandez, T. ; Mediavilla, Angel ; Nauwelaers, Bart ; Santarelli, Alberto ; Schreurs, Dominique ; Tazón, Antonio ; Traverso, Pier Andrea (2004) Nonlinear Models of Microwave Power Devices and Circuits. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Colantonio, P. ; Angel Garcia, Josè ; Giannini, Franco ; Limiti, Ernesto ; Malaver, Emigdio ; Carlos Pedro, Josè (2004) High Linearity and Efficiency Microwave PAs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

O’Droma, M. S. ; Portilla, J. ; Bertran, E. ; Donati, S. ; Brazil, T. ; Rupp, M. ; Quay, R. (2004) Linearisation Issues in Microwave Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Malyshev, Sergei ; Chizh, A. ; Andrievski, Vatslav (2004) InGaAs p-i-n Photodiodes for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Krotkus, A. ; Bertulis, K. ; Adomavicius, R. (2004) Low temperature MBE grown GaAs for terahertz radiation applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Zayachuk, Dmytro ; Strukhlyak, Natalia ; Krukovsky, Semen ; Goovaerts, Etienne ; Polyhach, Yevhen (2004) GaAs thin films grown by LPE under influence of Yb impurity. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Nosal, Zbigniew M. (2004) Performance Analysis of Transimpedance Amplifiers in Various Technologies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Magnee, P. H. C. ; Hurkx, G. A. M. ; Agarwal, P. ; van Noort, W. D. ; Donkers, J. J. T. M. ; Melai, J. ; Aksen, E. ; Vanhoucke, T. ; Vijayaraghavan, M. N. (2004) SiGe:C HBT technology for advanced BiCMOS processes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mijalkovic, S. ; Burghartz, J.N. (2004) Compact Modelling of SiGe HBTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Larson, Lawrence E. (2004) SiGe HBT BiCMOS Technology as an Enabler for Next Generation Communications Systems. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Vaucher, Cicero S. ; Apostolidou, M. ; Farrugia, Andrew ; Praamsma, Louis (2004) SiGe Building Blocks for Microwave Frequency Synthesizers. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Winkler, Wolfgang ; Heinemann, Bernd ; Knoll, Dieter (2004) Application of SiGe:C BiCMOS to Wireless and Radar. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Llopis, O. (2004) High Frequency and Low Frequency Noise in Microwave Oscillators. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. (2004) Simulation of Large-Signal Cyclostationary Noise in Microwave Devices: from Physics-Based to Compact Modelling Approaches. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

PRIGENT, M. ; NALLATAMBY, J.C. ; QUERE, R. (2004) Advanced Phase noise modeling techniques of nonlinear microwave devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre 2004, Amsterdam.

van Vliet, F.E. ; de Boer, A. (2004) On the stability of MMIC’s using transistors with inductive source feedback. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Borges, A. ; SMOS-PLM, Team (2004) SMOS Mission & MIRAS Instrument. Synthetic Apperture Radiometer in Space. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hollreiser, Martin (2004) Galileo Receivers - Challenges and Performance. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Cazaux, Jean-Louis ; Cayrou, Jean-Christophe ; Miquel, Christine ; Debarge, Cécile ; George, Sébastien ; Barbaste, Régis ; Bodereau, F. ; Chabbert, Philippe ; Maynard, Jean (2004) New Generation of Ka-Band Equipment for Telecommunication Satellites. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pennington, D. C. ; Hopper, R ; Reeves, R. M. (2004) Evolution of Transceiver Design from Radar to Imaging. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Isacsson, Magnus ; Johansson, Stefan ; Ståhl, Johan ; Thiesies, Heiko ; Lingsten, Johan ; Tengs, Audun (2004) A Wide Band Receiver Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mahmoudi, R. ; Milosevic, D. ; van der Tang, J.D. ; Hegt, J. A. ; van Roermund, A. H. M. (2004) Linearized Switching Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Saunier, Paul (2004) GaN Technology Overview: Accomplishments and Challenges. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Théron, D. ; Gaquière, C. ; De Jaeger, J.C. ; Delage, S. L. (2004) Recent Developments and Trends in GaN HFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Pavlidis, Dimitris (2004) GaN THz Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Palmour, J.W. ; Milligan, J.W. ; Henning, J. ; Allen, S.T. ; Ward, A. ; Parikh, P. ; Smith, R.P. ; Saxler, A. ; Moore, M. ; Wu, Y. (2004) SiC and GaN Based Transistor and Circuit Advances. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Kohn, E. ; Kubovic, M. ; Hernandez-Guillen, F. ; Denisenko, A. (2004) Diamond for High Power / High Temperature Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Tabata, H. ; Matsui, H. ; Saeki, H. ; Masuda, S. (2004) Construction of ZnO devices : electric and magnetic properties. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Khuchua, N. ; Chakhnakia, Z. ; Kobrava, N. ; Melkadze, R. ; Lezhneva, T. ; Sakharova, T. ; Tigishvili, M. ; Tutunjan, A. ; Tutunjan, N. ; Diehl, R. ; Tsenes, P. ; Hatzopoulos, Z. (2004) Availability of Enabling Technologies for GaAs-Based Specific Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Dubuc, D. ; Van Spengen, Merlijn ; Melle, Samuel ; De Wolf, Ingrid ; Mertens, Robert ; Pons, Patrick ; Grenier, Katia ; Plana, Robert (2004) Methodology to assess the reliability behavior of RF-MEMS. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Papaioannou, G. J. ; Theonas, V. ; Exarchos, M. ; Konstantinidis, G. (2004) RF MEMS Sensitivity to Radiations. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Millet, O. ; Bertrand, P. ; Legrand, B. ; Collard, D. ; Buchaillot, L. (2004) An Original Methodology to Assess Fatigue Behavior in RF MEMS Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Lisec, T. ; Huth, C. ; Wagner, B. (2004) Dielectric Material Impact on Capacitive RF MEMS Reliability. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Hadley, Peter (2004) Bottom-up Nanoelectronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Mertens, R.P. ; De Raedt, W. ; Carchon, G. ; Tilmans, H.A.C. ; Germain, M. (2004) Microwave applications of advanced semiconductor technologies. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Huang, Charles (1997) GaAs ICs for 3 volt electronics. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Movahhedi, Masoud ; Abdipour, A. (2005) Accelerating theTransient Simulation of Semiconductor Devices Using Filter-Bank Transforms. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zhu, Yu ; Wei, Cejun ; Oleksiy, Klimashov ; Cindy, Zhang ; Yevgeniy, Tkachenko (2005) Nonlinear model of epitaxial layer resistor on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, Darren R. ; Brazil, Thomas J. (2005) A new non-quasi-static non-linear MOSFET model based on physical analysis. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ziaei, Afshin ; Dean, Thierry ; Mancuso, Yves (2005) Lifetime characterization of capacitive power RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Torregrosa-Penalva, German ; Asensio-L´opez, Alberto ; Alvaro, Blanco-del-Campo (2005) Electro-thermal model extraction for MMIC Power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Godin, J. ; Riet, M. ; Konczykowska, A. ; Berdaguer, P. ; Kahn, M. ; Bove, P. ; Lahreche, H. ; Langer, R. ; Lijadi, M. ; Pardo, F. ; Bardou, N. ; Pelouard, J-L. ; Maneux, C. ; Belhaj, M. ; Grandchamp, B. ; Labat, N. ; Touboul, A. ; Bru-Chevallier, C. ; Chouaib, H. ; Benyattou, T. (2005) A GaAsSb/InP HBT circuit technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bhatnagar, Monica ; Morkner, Henrik (2005) A low cost SMT integrated frequency doubler and power amplifier for 30GHz DBS uplink applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zamanillo, J.M. ; Ingelmo, H. ; Perez-Vega, C. ; Mediavilla, A. (2005) A realistic large-signal microwave PHEMT transistors model for SPICE. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kim, Yong-Dae ; Sunwoo, Kook-Hyun ; Choa, Sung-Hoon ; Kim, Duck-Hwan ; Song, In-Sang ; Yook, Jong-Gwan (2005) Characterization of various shaped 5 GHz TFBARs based on 3D full-wave modeling. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tan, Hiang Teik ; Hunter, Ian C. ; Snowden, Christopher M. ; Ranson, Richard (2005) Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Myoung, Seong-Sik ; Cheon, Sang-Hoon ; Yook, Jong-Gwan (2005) Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Taher, H. ; Schreurs, D. ; Nauwelaers, B. (2005) Extraction of small signal equivalent circuit model parameters for statistical modeling of HBT using artificial neural. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bessemoulin, A. ; Fellon, P. ; Gruenenpuett, J. ; Massler, H. ; Reinert, W. ; Kohn, E. ; Tessmann, A. (2005) High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bakalski, W. ; Vasylyev, Andriy ; Simburger, Werner ; Kall, Marcus ; Schmid, Alfons ; Kitlinski, Krzysztof (2005) A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Hegazy, Hazem Mahmoud (2005) RLC Parasitic extraction and circuit model optimization for Cu/SiO2-90nm inductance structures. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Convert, Emmanuelle ; Beasly, Paul ; Mahon, Simon ; Dadello, Anna ; Harvey, James (2005) Design of broadband, highly integrated, 20-30 GHz and 35-45 GHz MMIC Up-converters. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jeong, Jin-Cheol ; Chang, Dong-Pil ; Shin, Dong-hwan ; Yom, In-Bok (2005) GaAs MMICs for use in upconverter modulefor Ka-band OBS satellite transponders. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tsai, Jung-Hui ; Kang, Yu-Chi ; Lour, Wen-Shiung (2005) InP/InGaAs resonant tunneling diode with six-route negative differential resistances. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tsai, Jung-Hui ; Kang, Yu-Chi (2005) Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Konczykowska, A. ; Jorge, F. ; Riet, M. ; Moulu, J. ; Godin, J. (2005) 50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Borgarino, M. ; Rossi, M. ; Fantini, F. (2005) Low noise, low interference automated bias networks for low frequency noise characterization set-up’s. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Sayed, Ahmed ; Boeck, Georg (2005) An empirical large signal model for silicon carbide MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Holm, M.A. ; Brookbanks, D. M. (2005) Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Chong, Thomas (2005) A low–noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Manan, Vikas ; Long, Stephen I. (2005) A dual band (10/16 GHz) p-HEMT VCO. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Huber, Meik ; von der Mark, Stefan ; Boeck, Georg (2005) A power efficient active K band mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Tan, S. G. ; McErlean, E. P. ; Hong, J. -S. ; Cui, Z. ; Wang, L. ; Greed, R. B. ; Voyce, D. C. (2005) Electromechanical modelling of high power RF-MEMS switches with ohmic contact. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Floriot, D. ; Jacquet, J-C. ; Chartier, E. ; Coupat, J-M. ; Eudeline, P. ; Auxemery, P. ; Blanck, H. (2005) Thermal management of power HBT inpulsed operating mode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Milosevic, Dusan ; van der Tang, Johan ; van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kawashima, Munenari ; Nakagawa, Tadao ; Yamaguchi, Yo ; Araki, Katsuhiko (2005) Improved technique for reflection performances in broadband variable gain low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Garcia, J. Manuel ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. ; Artal, E. (1997) Electrical equivalent circuit large-signal thermal modelling for GaAs III-V devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Santarelli, Alberto ; Vannini, Giorgio ; Borgarino, M. ; Menozzi, Roberto ; Baeyens, Y. ; van der Zanden, Koen (1997) Modelling of low-frequency dispersive effects in GaAs and InP HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Castillo-Vázquez, B. ; Martin-Guerrero, T. M. ; Camacho-Peñalosa, C. (1997) Scalable distributed model for microwave and millimetre-wave monolithic FET - type devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Rinaudo, S. ; Privitera, G. ; Ferla, G. ; Galluzzo, A. (1997) Small-signal and noise two-dimensional modeling of submicrometer high speed bipolar transistor. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Stopponi, G. ; Roselli, L. ; Ciampolini, P. (1997) Application of LE-FDTD analysis to non-linear circuits, including GaAs devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Sommet, R. ; Perreai, Y. ; Quere, R. (1997) A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Donati Guerrieri, S. ; Bonani, F. ; Pirola, M. ; Ghione, G. ; Filicori, F. (1997) A novel approach to yield estimate and IMP performance optimization of microwave devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Lugli, Paolo ; Di Carlo, A. ; Ragazzi, Stefano ; Rossi, Fausto (1997) Quantum-transport in nanostructured compound semiconductor devices: a generalized monte carlo approach. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Chennafi, Noureddine ; Rumelhard, Christian ; Gonzalez, Carmen ; Thuret, Julien (1997) Simulation and measurement of optoelectronic performances of InP/InGaAs heterojunction bipolar phototransistor. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Matulionis, Arvydas (1997) Hot-electron noise in Hemt channels and other 2-deg structures. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

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Borgarino, M. ; Plana, R. ; Escotte, L. ; Delage, S. L. ; Blanck, H. ; Fantini, F. ; Graffeuil, J. (1997) DC, RF and low frequency noise characterization of C and In/C doped GalnP/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Happy, H. ; Bollaert, S. ; Foure, H. ; Cappy, A. (1997) Theoretical analysis of material and high frequencies performence of metamorphic In Al_As/InGa_As (0.3 < x <0.6) HEMT devices on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Fumi, F. ; Peroni, M. ; Lanzieri, C. ; Donati Guerrieri, S. ; Pirola, M. ; Bonani, F. ; Naldi, C. U. (1997) Effects of implanted carbon-buried p-layer on the performance of multifunction self-aligned-gate (MSAG) GaAs MESFET's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bandler, J.W. ; Biernacki, R.M. ; Chen, S.H. (1997) Mixed-domain multi-simulator statistical device modeling and yiel-driven design. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Rizzoli, Vittorio ; Costanzo, Alessandra ; Caposciutti, Mauro (1997) Computer-aided design of multiple-varactor broadband VCO's by a novel optimisation algorithm. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Giannini, F. ; Leuzzi, G. ; Limiti, E. ; Scucchia, L. ; Zanetti, F. (1997) Non-linear optimum design of microwave active mixers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bae, Hyun-Cheol ; Kim, Sang-Hoon ; Song, Young-Joo ; Lee, Sang-Heung ; Lee, Ja-Yol ; Kang, Jin-Young (2005) A wideband fully integrated SiGe BiCMOS medium power amplifier. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yamanaka, Koji ; Iyomasa, Kazuhiro ; Ohtsuka, Hiroshi ; Nakayama, Masatoshi ; Tsuyama, Yoshinori ; Kunii, Tetsuo ; Kamo, Yoshitaka ; Takagi, Tadashi (2005) S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pérez-Pérez, L. A. ; Reynoso-Hernández, J. A. ; Loo-Yau, J. R. ; Soberanes-Flores, G. ; Ascencio-Ramírez, H. ; Rangel-Rojo, R. (2005) Detection and mixing of two modulated optical signals using only a single GaAs FET (experimental study). In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Weng, Ching-Chih ; Tsai, Zuo-Min. ; Wang, Huei (2005) A K-Band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yeh, Mei-Chao ; Tsai, Zuo-Min ; Wang, Huei (2005) A miniature DC-to-50 GHz CMOS SPDT distributed switch. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Han, Qing ; Shimura, Atsushi ; Inagaki, Keizo ; Ohira, Takashi ; Akaike, Masami (2005) A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Girbau, David ; Otegi, Nerea ; Pradell, Lluís ; Lázaro, Antonio (2005) Generation of third and higher-order intermodulation products in MEMS capacitors, and their effects. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Girbau, D. ; Otegi, N. ; Pradell, L. ; Lázaro, A. (2005) A MEMS capacitor with improved RF power handling capability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Bessemoulin, A. ; Mahon, S. ; Dadello, Anna ; McCulloch, G. ; Harvey, J. (2005) Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Heijningen, M. ; van Vliet, F.E. ; Quay, R. ; van Raay, F. ; Kiefer, R. ; Müller, S. ; Krausse, D. ; Seelmann-Eggebert, M. ; Mikulla, M. ; Schlechtweg, M. (2005) Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. ; Santarelli, A. ; Traverso, P.A. ; Vannini, G. ; Filicori, F. (2005) Simplified validation of non-linear models for micro- and millimeter-wave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Angelov, I. ; Desmaris, V. ; Dynefors, K. ; Nilsson, P.Å. ; Rorsman, N. ; Zirath, H. (2005) On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chao, Shih-Fong ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei (2005) Compact W-band SPQT MMIC switch using traveling wave concept. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Muller, A. ; Thiel, M. ; Irion, H. ; Ruoß, H.-O. (2005) A 122 GHz SiGe active subharmonic mixer. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Maekawa, Arata ; Nagahara, Masaki ; Yamamoto, Takashi ; Sano, Seigo (2005) A 100 W high-efficiency GaN HEMT amplifier forS-band wireless system. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Wiegner, D. ; Merk, T. ; Seyfried, U. ; Templ, W. ; Merk, S. ; Quay, R. ; van Raay, F. ; Walcher, H. ; Massler, H. ; Seelmann-Eggebert, M. ; Reiner, R. ; Moritz, R. ; Kiefer, R. (2005) Multistage broadband amplifiers based on GaNHEMT technology for 3G/4G base station applications with extremely high bandwidth. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Kärnfelt, Camilla ; Kozhuharov, Rumen ; Zirath, Herbert (2005) A high purity 60 GHz-band single chip X8 multiplier with low phase noise. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Clausen, M.C. ; McMonagle, J. (2005) Advanced manufacturing techniques for next generation power FET technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

van Raay, F. ; Quay, R. ; Kiefer, R. ; Fehrenbach, W. ; Bronner, W. ; Kuri, M. ; Benkhelifa, F. ; Massler, H. ; Müller, S. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G. (2005) A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Johansen, T.K. ; Krozer, V. ; Vidkjær, J. ; Djurhuus, T. (2005) Substrate effects in wideband SiGe HBT mixer circuits. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Martín-Guerrero, T.M. ; Camacho-Peñalosa, C. (2005) Frequency domain-based extraction method of one-port device’s non-linear state functions from large-signal measurements. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ezzedine, H. ; Delmond, M. ; Billonnet, L. ; Jarry, B. ; Guillon, P. (1997) Noise performances optimization of GAAS monolithic microwave active recursive filters using noise wave techniques. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Caddemi, A. ; Sannino, M. (1997) Optimization of the noise resistance of MESFET's and hemt's for CAD of microwave low-noise amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Clerckx, G. ; Verbiest, R. (1997) 26 GHz MMIC linear vector modulator. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Guetre, E. R. ; Stubbs, M. G. ; Wight, J. S. ; Laneve, T. (1997) A GaAs HBT emitter-injected upconverter at Ka-Band. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Caliumi, Alberto ; Masini, Leonardo ; Christensen, Steen Bak ; Aglietti, Marcello (1997) UP-converter for high performance cellular radio test equipment. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Gatti, G. ; Locke, S. ; Betti-Berutto, A. (1997) Dual chip Ku-band predistortion linearizer. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Avitabile, G. ; Cidronali, A. ; Salvador, C. ; Speciale, M. (1997) A GaAs MMIC phase shifter based on coupled spiral inductors. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Feudale, M. ; Suriani, A. (1997) Simple slope compensator for Ku-band applications. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Kanan, R. ; Hochet, B. ; Kaess, F. ; Declercq, M. (1997) A low-power GaAs flip-flop. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Bernal, A. ; Ribas, R.P. ; Guyot, A. (1997) GaAs MESFET SRAM using a new high speed memory cell. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Andre, Ph. ; Meghelli, M. ; Desrousseaux, P. ; Konczykowska, A. ; Godin, J. (1997) Decoding and decision circuits for high speed multi-level transmission. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Pallotta, Andrea ; Centurelli, F. ; Trifiletti, Alessandro (1997) A monolithic GaAs clock and data recovery circuit for 2.5 Gb/s NRZ data stream. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Krishnamurthy, L. ; Sun, Q. ; Vo, V. T. ; Parkinson, G. ; Paul, D. K. ; Williams, K. ; Rezazadeh, A. A. (2005) A comparative study of active and passive GaAs microwave couplers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Resca, D. ; Cignani, R. ; Raffo, A. ; Santarelli, A. ; Vannini, G. (2005) Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Lenk, F. ; Klockenhoff, H. ; Kurpas, P. ; Maaßdorf, A. ; Wurfl, H. J. ; Heinrich, W. (2005) A 3.2 W coplanar single-device X-band amplifier with GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Delage, S. L. (1999) Hero's project as an example of european programme on RF device improvement. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Gottwald, Frank (1999) Extended noise theory of GaAs-schottky-diodes. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Rudolph, M. ; Doerner, R. ; Richter, E. ; Heymann, P. (1999) Scaling of GaInP/GaAs HBT equivalent-circuit elements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Giannini, Franco ; Limiti, Ernesto ; Orengo, Giancarlo ; Scucchia, Lucio (1999) A systematic approach to microwave amplifier broadband matching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ageeva, N. N. ; Bronevoi, I. L. ; Kalafati, Yu. D. ; Krivonosov, A. N. (1999) High-speed optoelectronic effects arising under intensive picosecond stimulated emission in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Schaffauser, C. ; Vendier, O. ; Forestier, S. ; Michard, F. ; Geffroy, D. ; Drevon, C. ; Villemazet, JF. ; Cazaux, Jean-Louis ; Delage, S. L. ; Roux, JL. (2005) Optimised thermal and microwave packaging for wide-band gap transistors : diamond & flip chip. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Colantonio, P. ; Giannini, Franco ; Limiti, Ernesto ; Nanni, Antonio (2005) Investigation of IMD asymmetry in microwave FETs via volterra series. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tripon-Canseliet, C. ; Faci, S. ; Deshours, F. ; Algani, C. ; Alquié, G. ; Formont, S. ; Chazelas, J. (2005) Electromagnetic modeling and characterization of an optically-controlled microwave phase shifterin GaAs integrated technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Coccetti, F. ; Ducarouge, B. ; Scheid, E. ; Dubuc, D. ; Grenier, K. ; Plana, R. (2005) Thermal analysis of RF-MEMS switches for power handling front-end. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raffo, A. ; Lonac, J.A. ; Menghi, S. ; Cignani, R. (2005) Comparison between equivalent-circuit and black-box non-linear models for microwave electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue ; Ma, Zhenqiang ; Ma, Pingxi ; Reddy, Vijay ; Racanelli, Marco (2005) SiGe power HBT design considerations for IEEE 802.11 applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Jiang, Ningyue ; Ma, Zhenqiang (2005) Power gain analysis of SiGe HBTs with constant ge strain. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Bunz, B. ; Ahmed, A. ; Kompa, G. (2005) Influence of envelope impedance termination on RF behaviour ofGaN HEMT power devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Santarelli, A. ; Di Giacomo, V. ; Raffo, A. ; Traverso, P. A. ; Vannini, G. ; Filicori, F. ; Monaco, V. A. (2005) A simple non-quasi-static non-linear modelof electron devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

LAPORTE, C. ; LAPIERRE, L. ; MALLET, A. ; ANAKABE, A. (2005) Behaviour of a TWTA with a single or multicarrier input signal for telecommunication applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Magrini, I. ; Camprini, M. ; Cidronali, A. ; Collodi, G. ; Manes, G. (2005) A ultra low-power highly-linear HITD based down-converter for K-band applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Sozzi, G. ; Dieci, D. ; Menozzi, R. ; Lanzieri, C. ; Tomasi, T. ; Canali, C. (1999) Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de la Fuente, M.L. ; Pascual, J. P. ; Gonzalez, F. J. ; Artal, E. (1999) Broadband GaAs MMIC downconverter with very low intermodulation for TV applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Jacobs, B. ; Karouta, F. ; Kwaspen, J.J.M. ; Hageman, P.R. ; Kaufmann, L.M.F. ; Larsen, P.K. (1999) The processing and scalability of AlGaN/GaN HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zolper, J. C. (1999) AlGaInN power transistors: status and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Asif Khan, M. ; Shur, M. S. ; Gaska, R. (1999) Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Alekseev, Egor ; Eisenbach, Andreas ; Pavlidis, Dimitris (1999) Interface properties and electrical characteristics of III-V nitride-based MISFETS. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Boudart, B. ; Trassaert, S. ; Gaquiere, C. ; Theron, D. ; Crosnier, Y. (1999) Pulsed measurements of GaN MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chang, C.-P. ; Yen, C.-C. ; Chuang, H.-R. (2005) A 0.18-µm 2.4~6GHz CMOS broadband differential LNA for WLAN and UWB receiver. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Peña, R. ; Gómez, C. ; García, J. A. (2005) A measurement system for FET derivative extraction under dynamic operating regime. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Doud, Scarlet M. ; Shastry, Prasad N. (2005) A novel wideband MMIC voltage controlled attenuator with a bandpass filter topology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Comparini, M. ; Feudale, M. ; Ranieri, P. ; Suriani, A. ; Gatti, G. ; Auxemery, P. (1999) KA band satellite equipment using european GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Eckert, G. ; Engelhardt, E. ; Eiermann, F. (1999) Light-weight, temperature compensated T/R modules for active phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Darbandi, A. ; Buret, H. ; Michard, F. ; Zoyo, M. (1999) 25W L-band power module for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zoyo, M. ; Cartier, N. ; Touchais, J.Y. ; Maynadier, P. ; Midan, E. ; Sgard, P. ; Buret, H. ; Peschoud, M. (1999) X-band 22W SSPA for earth observation satellite. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tiginyanu, I.M. ; Hartnagel, H.L. (1999) Nanoporous membranes and heterostructures on III-V compounds for micro- and optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Nawaz, M. ; Persson, S. H. M. ; Zirath, H. ; Choumas, E. ; Mellberg, A. ; Kollberg, E. L. (1999) A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zhuravlev, K.S. ; Toropov, A.I. ; Shamirzaev, T.S. ; Bakarov, A.K. ; Rakov, Yu.N. ; Myakishev, Yu. B. (1999) High purity AlGaAs grown by molecular beam epitaxy. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, JJ. (1999) Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Dobes, Josef (1999) Modeling the GaAs nonlinear microwave circuits using the CIA program. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Filicori, Fabio ; Santarelli, Alberto ; Traverso, Pierandrea ; Vannini, Giorgio (1999) Electron device model based on nonlinear discrete convolution for large-signal circuit analysis using commercial CAD packages. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bobbo, B. M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. ; Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Acciari, G. ; Giannini, F. ; Leuzzi, G. (1999) Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kohn, E. ; Daumiller, I. (1999) High temperature performance of gan-based HFET's. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. ; Cassette, S. ; Poisson, M.-A.diForte ; Floriot, D. ; Chartier, E. ; Etienne, P ; Galtier, P. ; Landesman Thomson, J.-P. (1999) The correlation between material properties and HBT reliability. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Poledrelli, C. ; Betti-Berutto, A. ; Khandavalli, C. ; Satoh, T ; Igarashi, T. ; Kuroda, S. ; Fukaya, J. (1999) High efficiency 1.4 W power amplifier for K-Band satellite communication system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hoel, Virginie ; Boret, Samuel ; Grimbert, Bertrand ; Aperce, Gilles ; Bollaert, S. ; Happy, Henri ; Wallart, Xavier ; Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Werthof, A. ; Grave, T. ; Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Recly, Agnes ; Tronche, Christian ; Cazaux, Jean-Louis ; Ducrocq, Jean-Bernard (1999) Ka-Band down converter and up converter in MCM-C technology for future telecommunication equipment. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Colantonio, P. ; Giannini, Franco ; Leuzzi, Giorgio ; Limiti, Ernesto (1999) A unified approach to high efficiency microwave power amplifier design. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de Hek, A.P. ; Hunneman, P.A.H. ; Demmler, M. ; Hülsmann, A. (1999) A compact broadband high efficient X-Band 9-Watt PHEMT MMIC high-power amplifier for phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Betti-Berutto, A. ; Satoh, T. ; Khandavalli, Chandra ; Giannini, Franco ; Limiti, Ernesto (1999) Power amplifier second harmonic manipulation: mmWave application and test results. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gebara, Edward ; Heo, Deukhyoun ; Laskar, Joy ; Harris, Mike (1999) Development of temperature dependent load-pull analysis techniques. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Heuken, M. ; Juergensen, H. (1999) MOCVD production tool for high speed electronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Alphones, Arokiaswami (1999) Change of gm(f) in LT-GaAs and LT-Al0.3Ga0.7As MISFETs with thermal stress. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sim, Steven K. H. ; Mutamba, Kabula ; Herbert Li, E. (1999) Dual-wavelength of 1.3um and 1.55um AlGaSb/GaSb asymmetric quantum-well laser. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bertone, D. (1999) In-situ etching technique, inside MOCVD reactor, for fabrication of III-V optoelectronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Makihara, Chihiro ; Yoshida, Katsuyuki (1999) Development of millimeter-wave package for consumer market. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Otoki, Y. ; Kamogawa, H. ; Ohnishi, M. ; Inada, T. ; Kashiwa, M. ; Sakaguchi, H. (1999) Large volume production of large size GaAs substrates and epitaxial wafers for microwave devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Landstorfer, F. M. (1999) Wave propagation models for the planning of mobile communication networks. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gudmundson, Mikael (1999) WCDMA - The third generation radio access. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Lee, Thomas H. (1999) CMOS RF integrated circuits: past, present and future (invited). In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deyhimy, Ira ; Tomasetta, Lou (1999) Technologies for Telecom & Datacom data transmissions. And the winner is: just plain mesfets. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Möller, M. ; Rein, H.-M. ; Gottwald, E. ; Meister, T.F. (1999) SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tsai, Huan-Shang ; Roux, Pascal ; Giguet, Jean Louis ; Chen, Young-Kai (1999) Dual-function MMIC for microwave digital radio. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kauffmann, N. ; Andre, P. ; Burie, J.R. ; Duchenois, A. M. ; Riet, M. ; Konczykowska, A. (1999) 44 Gb/s InP DHBT MUX-Driver IC for external laser modulation. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frounchi, Javad ; Harrold, Steve J. (1999) Multigigabit programmable comb decimator implemented in GaAs/AlGaAs HEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kojucharow, K. ; Kaluzni, H. ; Sauer, M. ; Schaffer, Ch. ; Finger, A. (1999) Millimeter-wave wireless LAN based on simultaneous upconversion technique of optical WDM channels. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ghione, G. ; Goano, M ; Omegna, G. ; Pirola, M. ; Bosso, S. ; Frassati, D, ; Perasso, A. (1999) Characterization and optimization of CPW electro-optic modulators for microwave and MM-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Schreurs, Dominique (1999) Overview of non-linear device modelling methods based on vectorial large-signal measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Verspecht, Jan ; Schreurs, Dominique (1999) Recent advances in the measurement and black-box modelling of high-frequency components. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Teyssier, J.P. ; Barataud, D. ; Laloue, A. ; Bouysse, Ph. ; Quere, R (1999) Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rodríguez Tellez, J. ; Mediavilla, A. ; Fernández, T. ; Tazón, A. (1999) A method for characterising frequency dispersion and thermal effects independently in GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ferrero, A. ; Madonna, GianLuigi ; Pisani, Umberto (1999) Recent technological advances for modular active harmonic load-pull measurement systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, Erich ; Eberhardt, Jochen (1999) Physics of future ultra high speed transistors - part 1: HBT. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, E. ; Reitemann, G. (1999) Physics of future ultra high speed transistors - Part II: new concepts. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ponchak, George E. (1999) RF transmission lines on silicon substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Suárez, Almudena ; Sancho, Sergio (1999) Chaos in Si MMIC oscillators. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Larson, Lawrence E. ; de Vreede, Leo C.N. (1999) The impact of silicon technology on future microwave systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Wang, K. L. (1999) AlGaN/GaN on SiC HFETs for microwave power amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Würfl, J. ; Hilsenbeck, J. ; Nebauer, E. ; Trankle, G. ; Obloh, H. (1999) Technology and thermal stability of ALGAN/GAN HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Adesida, I. ; Ping, A. T. ; Redwing, J. (1999) AlGaN/GaN heterostructure field-effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chang, E. Y. ; Lee, Di-Houng ; Lai, Yeong-Lin ; Chen, S.H. (1999) A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frank, B.M. ; Freundorfer, A.P. ; Antar, Yahia M.M. (1999) A novel common gate mixer for wireless applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Achouche, M. ; Kraus, S. ; Spitzbart, T. ; Hähle, S. ; John, W. ; Mai, M. ; Rentner, D. ; Wolter, P. ; Wittrich, H. ; Bergunde, T. ; Brunner, F. ; Kurpas, P. ; Richter, E. ; Weyers, M. ; Würfl, J. ; Tränkle, G. (1999) GaAs microwave power HBTs for mobile communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bué, F. ; Gaquiere, C. ; Crosnier, Y. ; Carnez, B. ; Quentin, P. (1999) A 26-40 GHz on wafer intermodulation measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Klaassen, Andreas ; Reber, Rolf ; Ludwig, Michael (1999) A precision T/R module for X-Band SAR applications with a transmit chain in HBT-Technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Horio, K. ; Wakabayashi, A. (1999) Computer-aided analysis of surface-state effects on kink phenomena in GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Beilenhoff, K. (1999) Device models for (M)MIC circuit design - benefits and limitations. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Goel, Ashok ; Bergstrom, Sarah ; Mojica-Campbell, Aleli (1999) Computer simulation of GaAs and SOI devices using TCAD tools: an REU project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Laloue, A. ; Mallet-Guy, B. ; Mons, S. ; Laporte, E. ; Quéré, R. ; Soulard, M. (1999) A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cidronali, A. ; Santarelli, Alberto ; Collodi, G. (1999) A novel approach to scalability for distributed FET models. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Higgins, J. Aiden (1999) III-V technologies: a growth industry for the 21st century. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chokshi, Trushal ; Peroulis, Dimitrios (2005) Stress-induced failure modes in high-tuning range RF MEMS varactors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Doand, M.N. ; Dubuc, D. ; Coustou, A. ; Tournier, E. ; Ancey, P. ; Plana, R. (2005) Highly linear 20 GHz-Micromixer in SiGe bipolar technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Seo, Sanghyun ; Pavlidis, Dimitris ; Moon, Jeong-Sun (2005) A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ketterl, T. ; Weller, T. (2005) SPDT RF MEMS switch using a single bias voltage and based on dual series and shunt capacitive MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Zhu, Xin ; Wang, Jing ; Pavlidis, Dimitris (2005) InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Chee, Joolien ; Karru, Ratnakar ; Fisher, Timothy S. ; Peroulis, Dimitrios (2005) DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Yun, Wansuk ; Govind, Vinu ; Dalmia, Sidharth ; Sundaram, Venky ; Swaminathan, Madhavan ; White, George E. (2005) An integrated double balanced mixer on multilayer liquid crystalline polymer (M-LCP) based substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Long, John R. (2005) Can silicon catch the millimeter wave? In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Burke, P.J. ; Yu, Z. ; Rutherglen, C. (2005) Carbon nanotubes for RF and microwaves. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Veenstra, H. ; Hurkx, G.A.M. ; Heijden, E. v.d. ; Vaucher, C.S. ; Apostolidou, M. ; Jeurissen, D. ; Deixler, P. (2005) 10-40GHz design in SiGe-BiCMOS and Si-CMOS – linking technology and circuits to maximize performance. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tinella, C. ; Gianesello, F. ; Gloria, D. ; Raynaud, C. ; Delatte, P. ; Engelstein, A. ; Fournier, J.M. ; Benech, Ph. ; Jomaah, J. (2005) Partially depleted CMOS SOI technology for low power RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Mazouffre, Olivier ; Lapuyade, Hervé ; Begueret, Jean-Baptiste ; Cathelin, Andreia ; Belot, Didier ; Hellmuth, Patrick ; Deval, Yann (2005) A 23-24 GHz low power frequency synthesizer in 0.25 m SiGe. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Dambrine, G. ; Gloria, D. ; Scheer, P. ; Raynaud, C. ; Danneville, F. ; Lepilliet, S. ; Siligaris, A. ; Pailloncy, G. ; Martineau, B. ; Bouhana, E. ; Valentin, R. (2005) Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Raskin, Jean-Pierre (2005) Wideband characterization and simulation of advanced MOS devices for RF applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Ferndahl, M. ; Motlagh, B.M. ; Masud, A. ; Angelov, I. ; Vickes, H. -O. ; Zirath, H. (2005) CMOS devices and circuits for microwave and millimetre wave applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Pavlidis, Dimitris ; Valizadeh, Pouya ; Hsu, S. H. (2005) AlGaN/GaN high electron mobility transistor (HEMT) reliability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Park, Changkun ; Yun, Seok-Oh ; Han, Jeonghu ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol (2005) ESD characteristics of GaAs versus silicon diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Tartarin, J.-G. ; Soubercaze-Pun, G. ; Bary, L. ; Chambon, C. ; Gribaldo, S. ; Llopis, O. ; Escotte, L. ; Plana, R. ; Delage, S. L. ; Gaquière, C. ; Graffeuil, J. (2005) Low Frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Sharp, Steve (1998) It is not about transistors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Brazil, Thomas J. (1998) Achievements of european collaboration in high-frequency CAD within the EDGE programme. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Lahdes, M. ; Tuovinen, J. (1998) V-band on-wafer noise parameter measurements. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Verspecht, Jan ; Van Esch, Patrick (1998) Measuring, black-box modelling and simulating transistor nonlinear behavior: nonlinear S-parameters can do the job! In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Valentine, Gary W. ; Kastle, Todd A. (1998) The status of T/R module development in the USA. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Schaeffner, R. ; Eckert, G. ; Nuetzel, T. (1998) Design and technology of T/R modules for phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Mancuso, Y. (1998) Technological trends for T/R modules. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Comparini, M.C. ; Feudale, M. ; Ranieri, P. ; Suriani, A. (1998) Ka band GaAs MMIC chipset for satellite communication payloads. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kangaslahti, P. ; Kalajo, S. ; Porra, V. ; Jukkala, P. (1998) Unlimited bandwidth TWT predistortion lineariser MMICs for Ku- and Ka-band Operation. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Darbandi, A. ; Rogeaux, E. ; Zoyo, M. ; Rivierre, B. ; Lapierre, L. (1998) S-band SSPA for multicarrier applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Limiti, E. ; Mastripieri, S. ; Ranieri, P. ; Suriani, A. (1998) Resistive GaAs HEMT mixer designs for satellite payloads. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Hyvönen, L. ; Närhi, T. (1998) MMIC non-linear transmission line frequency doubler. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Borgarino, M. ; Tartarin, J.G. ; Plana, R. ; Delage, S. L. ; Graffeuil, J. ; Fantini, F. (1998) The influence of the emitter orientation on the DC and low frequency noise characteristics of GalnP/GaAs HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Zaknoune, M. ; Cordier, Y. ; Bollaert, S. ; Theron, D. ; Crosnier, Y. (1998) Power performance capability of metamorphic HEMT on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bollaert, S. ; Cordier, Y. ; Happy, H. ; Zaknoune, M. ; Lepilliet, S. ; Cappy, A. (1998) 0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Ziegler, Volker ; Berg, Michael ; Tobler, Hans ; Wolk, Claus ; Deufel, Reinhard ; Dickmann, Jürgen ; Trasser, Andreas ; Schumacher, Hermann ; Alekseev, Egor ; Pavlidis, Dimitris (1998) InP-based monolithic integrated PIN diode switches for mm-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

van Saders, John (1998) Miniaturized receiver modules for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Rocchi, Marc (1998) The power amplifier rat race for digital mobilecom applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Pengelly, Raymond S. (1998) GaAs RFICs For mobile telephone applications -- A review. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Friedrich, Hans P. ; Weisgerber, Andreas (1998) GaAs power amplifier MMIC for GSM single and multiband radios. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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García, José A. ; Pedro, José C. ; Carvalho, Nuno B. ; Mediavilla, Angel ; Tazón, Antonio (1998) Accurate nonlinear resistive FET modeling for IMD calculations. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Jansen, R.H. ; Aachen, A. John (1998) Design-oriented electromagnetic modeling for MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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del Alamo, J. A. ; Somerville, M. H. ; Blanchard, R. R. (1998) Millimeter-wave power InP HEMTs: challenges and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Adesida, I. ; Ping, A.T. (1998) GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Arndt, J. ; Dietrich, H. ; Schüppen, A. ; Erben, U. (1998) SiGe - Key technology for economic solutions in high frequency. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Feldle, Heinz-Peter ; Reber, R. H. (1998) Monolithic low noise amplifier for X-band applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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de Boer, A. ; van der Graaf, M.W. ; de Hek, A.P. ; Tieman, T.C.B. (1998) A GaAs multi-function X-band MMIC for space-based SAR application with 7 BIT phase and amplitude control. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Calori, M. ; Graffitti, R. ; Marescialli, L . ; Proietti, C. (1998) J-band 16 watt HFET amplifier module for very high power applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bhagavathula, Seshu (1998) The Daimler-Benz research centre in India: an overview. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kompa, Günter (1998) Getting students into central Europe - a postgraduate degree programme at the GhK with special emphasis on a Kenya co-operation. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Sporkmann, T. ; Naghed, M. ; Verweyen, L. ; Haydl, W.H. ; Schlechtweg, M. (1998) Coplanar MMICs - The future for mass production! In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Koether, D. ; Sporkmann, Th. (1998) Power Pull: an unconditionally stable active Load-Pull measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Fennelly, Michael ; Wandrei, David (1998) Load Pull measurements for GSM and CDMA power modules. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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de Hek, A.P. (1998) A novel fast search algorithm for an active load-pull measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Tsironis, Christos ; Dubouil, Dominique ; Allard, Francois (1998) Harmonic load and source pull tuners for millimeterwave frequencies. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Majerus, Michael (1998) Device characterization using the Automated Tuner System "ATS". In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Di Martino, A. ; Pisa, S. ; Tommasino, P. ; Trifiletti, A. (1998) An extraction procedure for MESFET'S and HEMT'S non-linear model determination. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Borgarino, M. ; Menozzi, R. ; Tasselli, J. ; Marty, A. (1998) A comparison between HBT small-signal model optimization using a genetic algorithm and direct parameter extraction. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Tartarin, J.G. ; Escotte, L. ; Graffeuil, J. (1998) Small-signal model extraction technique dedicated to noise behaviour of microwave HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Dhondt, F. ; Barrette, J. ; Rolland, P.A. (1998) Global model for high-power HBTs suitable for CAD and device optimization. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Leuzzi, G. ; Serino, A. ; Giannini, F. (1998) Equivalent circuit of FET active loads for non-linear applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Castillo-Vázquez, B. ; Martin-Guerrero, T.M ; Camacho-Peñalosa, C. (1998) Parameter extraction procedure for microwave and millimetre-wave monolithic FET-type devices based on a scalable distributed model. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Masera, G. ; Piccinini, G. ; Ruo Roch, M. ; Zamboni, M. (1998) Charge injection E/D MESFET structures for high speed and low power applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Giorgio, Agostino ; Gina Perri, Anna (1998) Thermal modeling of GaAs FETs for MMICs CAD with modern design techniques. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Lapergue, T. ; Lapierre, L. ; Graffeuil, J. ; Tronche, C. (1998) Driver for phase shift keying modulator using a multilevel MMIC technology for K-band space applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. ; Pirola, M (1998) A unified, CAD-oriented approach for the physics-based large-signal conversion and noise modelling of microwave and mm-wave semiconductor devices. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Gautier-Levine, A. ; Scavennec, A. ; Lefevre, R. ; Falcou, A. ; Dumas, J.M (1998) Gate lag in InP HFET : influence on digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Navarro, C. ; Zamanillo, J. M. ; Mediavilla, A. ; Garcia, J.L. (1998) Large signal dynamic properties of GaAs MESFET/HEMT devices under optical illumination. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Stratakos, George E. (1998) CAD design of an active MMIC circulator at 21-26 GHz frequency band. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Cordeiro, Jean-Philippe ; Costa Freire, J. (1998) Scaling non linear models for low gm MESFETS. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Trifiletti, A. ; Centurelli, F. ; Tommasino, P. (1998) Positive feedback GaAs comparators for SDH/SONET applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kwaspen, J.J.M. ; Lepsa, M.I. ; van de Roer, Th. G. ; Heyker, H.C. ; van der Vleuten, W.C. (1998) A full alternative for the RTD quantum-inductance equivalent-circuit model. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Bava, G.P. ; Debernardi, P. ; Fratta, L. (1998) Electromagnetic model of GaAs VCSEL'S with gain giuding. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Valkov, Stéphane ; Pouvil, Pierre ; Temcamani, Farid ; Leblanc, Rémy (1998) A fully CAD consistent model of MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Ouslimani, A. ; Gaubert, J. ; Hafdallah, H. ; Birafane, A. ; Pouvil, P. ; Leier, H. (1998) New method for determining parasitic access inductances of high frequency on-wafer coplanar heterojunction bipolar transistors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kim, Dae-Hyun ; Yang, Sung-Gi ; Ryu, Gi-Hyon ; Seo, Kwang-Seok (1998) A new FET extrinsic parameter extraction method at pinch-off bias utilizing gate-width scaling property. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Gaubert, J. ; Ouslimani, A. ; Hafdallah, H. ; Medjnoun, M. ; Birafane, A. (1998) New large signal electrothermal HBT model with original parameters extraction procedure. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Poplavko, Yuri ; Ilchenko, Michael ; Pereverzeva, Larissa ; Prokopenko, Yuri ; Ivaschuk, Anatoliy (1999) Pyroelectric-like response in semi-insulating III-V crystal. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Follmann, R. ; Tempel, R. ; Herrmann, J. ; Sporkmann, T. ; Wolff, I. (1998) Accurate new scaling routines for any table/function based FET model including temperature and noise behaviour. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Chennafi, Noureddine ; Rumelhard, Christian ; Gonzalez, Carmen ; Thuret, Julien (1998) Modelling the photoresponse characteristics of InP/InGaAs heterojunction phototransistor with different incident directions of beam light. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Schmale, Ingo ; Kompa, Günter (1998) A novel thermal resistance extraction technique for temperature-dependent FET modelling. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Deschamps, B. ; Bourreau, D. ; Péden, A. ; Toutain, S. (1998) Gunn diode modelling through a new load-pull characterization method. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Lima, Mario J. ; Monteiro, Paulo P. ; Matos, J. Nuno ; da Rocha, Jose F. ; Teixeira, Antonio (1998) Design and performance assessment of a multigigabit clock-recovery circuit. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Mouzannar, W. ; Billonnet, L. ; Jarry, B. ; Guillon, P. (1998) A new design concept for realising highly tunable microwave filters using recursive principles. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Iqbal, A. ; Darwazeh, I. Z. (1998) A 23 GHz baseband HBT distributed amplifier for optical communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Kashiwa, Takuo ; Katoh, Takayuki ; Ishida, Takao ; Kurusu, Hitoshi ; Mitsui, Yasuo (1998) A Ka-band high power monolithic HEMT VCO using a sub-resonator circuit with phase control architecture. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Salameh, D. ; Linton, D. (1998) Novel wide bandwidth GaAs sampling MMIC using microstrip based nonlinear transmission line (NLTL) and NLTL shock wave generator design. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Filicori, F. ; Santarelli, A. ; Vannini, G. ; Monaco, V.A. (1998) A "backgating" model including self-heating for III-V FETs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Fernandez, T. ; Garcia, J. Angel ; Tazón, A. ; Mediavilla, A. ; García, J.L. ; Pedro, J.C. (1998) A new Ids large signal continuous model for HEMT devices valid under static and dynamic conditions. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Cojocaru, Vicentiu I. ; Brazil, Thomas J. (1998) Comparison between intermodulation distortion prediction capabilities of the COBRA model and of other non-linear FET models. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Colantonio, P. ; Giannini, Franco ; Leuzzi, Giorgio ; Limiti, Ernesto (1998) Improving performances of low-voltage power amplifiers by second-harmonic manipulation. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Hartnagel, H.L. ; Arslan, D. ; Brandt, M. ; Dehe, A. ; Mutamba, K. ; Vogt, A. (1998) Compound semiconductor microsensors for applications in mechanical engineering. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Cardarelli, R. ; Ciorciolini, S. ; Chiostri, V. ; Orengo, G. (1998) An 8-channels GaAs IC front-end discriminator for RPC particle detectors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Jensen, Joseph F. ; Raghavan, Gopal ; Walden, Bob ; Stanchina, Bill (1998) High performance InP HBT technology for analog-to-digital conversion. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Hourany, Jean ; Bellaiche, Joseph ; Andre, Jean-Pierre ; Delhaye, E. (1998) 40 Gb/s ICs using a production PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Nespola, A. ; Goano, M. ; Ghione, G. ; Haidar, J. (1998) Quasi-3D coupled electro-optical simulation of MQW avalanche waveguide photodetectors. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Biernat, A. ; Korapa, G. (1998) Generation of high-power picosecond laser pulses. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Monteiro, Paulo P. ; Antunes, Pedro L. ; Lima, Mario J. ; da Rocha, Jose F. (1998) Adjustable pulse shaping filter with active impedance matching for optical soliton communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Krupenin, S. ; Blanchard, R. R. ; Somerville, M. H. ; del Alamo, J. A. ; Duh, K. G. ; Chao, P. C. (1998) Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Meneghesso, G. ; Paccagnella, A. ; Martines, G. ; Garat, F. ; Crosato, C. ; Zanoni, E. (1998) DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Greiling, Paul ; Nguyen, Loi (1998) High performance device technologies for future communications satellites. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Van Ress, B.H. ; Laghton, D. (1998) Next generation MMIC integration technology for high frequency phase array antennas. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Comparini, M.C. ; Feudale, M. ; Suriani, A. (1998) MMICs for commercial satellite applications: from C and Ku to Ka band and millimeterwave. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Stubbs, Malcolm G. (1998) Canadian GaAs IC developments for communication applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Alm, Roberto (1998) Practical application of GaAs MMIC technology to next-generation 20 / 30 GHz data communication systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Khandavalli, C. ; Betti-Berutto, A. ; Lum, G. ; Fukaya, J. ; Satoh, T. ; Mitani, E. (1998) A tunable 125 mW K-band MMIC power amplifiers for point to point radio application. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Bessemoulin, A. ; Algani, C. ; Alquié, G. ; Fouad Hanna, V. (1998) Design and characterization of a 67 GHz 0.3 um AlGaAs/GaAs/AlGaAs HEMT monolithic amplifier in coplanar waveguide technology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Tempel, R. ; Lütke, W. ; Wolff, I. (1998) A compact coplanar MMIC Mixer For 2.4 GHz transponder systems. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Devlin, L. ; Buck, B. J. ; Clifton, J. C. ; Dearn, A.W. ; Geen, M. W. ; Long, A. P. ; Melvin, S. P. (1996) GaAs application specific MMICs for a HIPERLAN MCM. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Tieman, T.C.B. ; van Vliet, F.E. ; van den Bogaart, F.L.M. ; Tauritz, J.L. (1996) A tuneable GaAs MMIC band stop filter at X-band with a novel active inductor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ajram, S. ; Kozlowski, Romain ; Van de Velde, Jean Claude ; Salmer, Georges (1996) Application of GaAs power devices to very - high - frequency and high - efficiency DC to DC power converters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abbott, Derek ; Eshraghian, K. (1996) Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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España Boquera, M.C. ; Puerta Notario, A. (1996) Injection locked laser modelling in presence of noise. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; Van der Zanden, K. ; Van Hove, M. ; De Raedt, W. ; Van Rossum, M. (1996) A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Stephan, R. ; Möhring, J. (1996) Practical investigations on monolithic integrated microwave filters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Ndagijimana, Fabien ; Chilo, Jean (1996) Design of very high performance packages for microwave GaAs IC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Gasmi, A. ; Huyart, B. ; Bergeault, E. ; Jallet, L. (1996) Narrow band quasi-circulator module design used in a transmit / receive module. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Larhèche, H. ; Faure, B. ; Richtarch, C. ; Letertre, F. ; Langer, R. ; Bove, P. (2005) Progress in microwave GaN HEMT grown by MBE on silicon and smart Cut TM engineered substrates for high power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Larhèche, H. ; Faure, B. ; Richtarch, C. ; Letertre, F. ; Langer, R. ; Bove, P. (2005) Progress in microwave GaN HEMT grown by MBE on silicon and smart cut TM engineered substrates for high power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Shimawaki, Hidenori ; Miyamoto, Hironobu (2005) GaN-based FETs for microwave high-power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Morales, J. ; Suarez, A. ; Sarkissian, J. C. ; Quere, R. (1996) Global stability analysis of a broadband MMIC frequency divider in millimetric band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ngoya, E. ; Larcheveque, R. (1996) Simulation of microwave communication circuits and systems by envelop and compressed transient methods. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Brazil, Thomas J. (1996) EDGE: Europe's new ESPRIT project in high-frequency CAD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morthier, G. ; Baets, R. (1996) Trends in modelling of single frequency laser diodes. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bressan, M. ; Conciauro, G. ; Gamba, P. (1996) A fast EM simulator for the wideband analysis of multiconductor buses for MMIC's and high-speed digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ghione, G. ; Goano, M. ; Naldi, C. U. (1996) A CAD-oriented model for the ohmic losses of multiconductor coplanar lines in hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pillan, Margherita ; Salice, Fabio ; Ghione, Giovanni (1996) A constraint generation tool for the design of high frequency integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Monfraix, Philippe ; Drevon, C. ; Schaffauser, Chloé ; Paillard, Mathieu ; Vendier, Olivier ; Cazaux, Jean-Louis (2005) 3D packaging for space application : imagination and reality. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Comparini, M.C. ; Di Marcantonio, U. ; Feudale, M. ; Piloni, V. ; Suriani, A. (2005) Advanced multi chip module solutions for RF and digital space applications: status and perspective. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Reedy, Ronald E. ; Camparini, Massimo Claudio (2005) Impact of RFIC integration of system and subsystem blocks on MCM solutions. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Cidronali, A. ; Camprini, M. ; Magrini, I. ; Bertran, E. ; Athanasopoulos, N. ; Makri, R. ; Cignani, R. ; Vannini, G. ; Portilla, J. ; Casas, P. ; Vryssas, K. ; Samelis, A. ; Manes, G. (2005) TX system-level analysis by behavioral modeling of RF building blocks: the IEEE802.11a and IEEE802.15.3a case studies. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Giannini, F. ; Orengo, G. ; Paoluzi, G. ; Magrini, P.F. (1994) Multiproject array of GaAs MMIC front-end amplifiers for detection in accelerator physics. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Canali, C. ; Nava, F. ; Castaldini, A. ; Cavallini, A. ; Del Papa, C. ; Frigeri, C. ; Zanotti, L. ; Cetronio, A. ; Lanzieri, C. (1994) Gallium Arsenide charged particle detectors: deep levels effects. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bertuccio, G. ; Longoni, A. ; Runge, K. ; Lauxtermann, S. (1994) The HFETs in charge preamplifiers for particles physics applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Miao, J. ; Hartnagel, H. L. ; Rück, D. ; Fricke, K. ; Würfl, J. ; Grüb, A. (1994) Microstructuring of ion-implanted GaAs for high temperature sensor applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Camin, D. V. ; Pessina, G. ; Previtali, E. ; Pillan, Margherita (1994) Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Volkov, L.V. ; Lyubchenko, V.E. ; Tikhomirov, S.A. (1994) The arrays of GaAs antenna-coupled Schottky barrier diodes in millimeter wave imaging systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Poplavko, Yuri M. (1994) Artificial pyroelectricity in i-GaAs and its possible application. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Asmontas, S. ; Suziedelis, A. (1994) GaAs microwave detector. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Siweris, Heinz J. ; Grave, Thomas ; Schleicher, Lothar (1994) A monolithic HEMT distributed amplifier using a low cost spacer technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Fricke, K. ; Krozer, V. ; Lee, W.L. ; Ruppert, M. ; Schubler, M. ; Schweeger, G. ; Sigurdardottir, A. ; Hartnagel, H.L. (1994) Design and technology of AlGaAs/GaAs HBT for high temperature circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Jarasiunas, K. ; Vaitkus, J. ; Bastiene, L. ; Vasiliauskas, R. (1994) Defect-related carrier transport peculiarities in lec-grown semi-insulating and heavily-doped GaAs crystals. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Plana, R. ; Roux, J.P ; Escotte, L. ; Llopis, O. ; Graffeuil, J. ; Delage, S. L. ; Blanck, H. (1994) Excess noise in microwave GaInP/GaAs heterojunction bipolar transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Caligiore, A. ; Di Paola, A. ; Di Egidio, M. ; Germagnoli, A. ; Grassi, E. ; Pansini, E. ; Parravicini, S. ; Ritchie, D. ; Tromby, M. ; Vidimari, F. (1994) Power P-HEMT realization on MOVPE structures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Chen, J. W. ; Ebling, D. ; Eiche, C. ; Fiederle, M. ; Frommichen, T. ; Hug, P. ; Irsigler, R. ; Jantz, W. ; Ludwig, J. ; P1otze, T. ; Rogalla, M. ; Runge, K. ; Stibal, R. (1994) Characterization of semi-insulating GaAs for detector fabrication. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Subacius, L. ; Jarasiunas, K. (1994) Experimental studies of light-microwave field interaction and nonequilibrium carrier transport in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Aniel, F. ; Crozat, P. ; De Lustrac, A. ; Adde, R. ; Jin, Y. (1994) Low drain bias operation of 0.l um to 0.4 um gate length pseudomorphic Al0.22Ga0.78As/In0.2Ga0.8As/GaAs HEMTs at cryogenic temperature. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Dambrine, G. ; Danneville, F. ; Belquin, J.M. ; Cappy, A. (1994) On-line noise characterization. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Conti, P. ; Audagnotto, P. (1994) Scattering and noise measurements of pseudomorphic high electron mobility transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Ladbrooke, Peter H. ; Beaumont, S. P. (1994) Technological design centering for a 44GHz low-noise amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Paccagnella, A. ; Del Papa, C. ; Chitussi, P. ; Fuochi, P.G. ; Benetti, P. (1994) Radiation induced degradation of electrical characteristics of III-V devices. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Feng, Shen ; Seitzer, Dieter (1994) Statistical characterization of GaAs E/D HEMT analog components for data conversion ICs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bandler, J.W. ; Biernacki, R.M. ; Cai, Q. ; Chen, S.H. (1994) A robust physics-oriented statistical GaAs MESFET model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cova, Paolo ; Chioato, Elena ; Conti, P. ; Dall'Aglio, Sandra ; Fantini, F. ; Manfredi, Manfredo ; Menozzi, Roberto ; Necchi, Riccardo (1994) Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lee, F. ; Kinoshita, G. ; Chang, M.F. (1994) HBT technology and applications, today and tomorrow. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lassen, Peter S. ; Long, Stephen I. (1994) 1.5 Gb/s, 6.6 mW 8-bit multiplexer using two-phase dynamic FET logic. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Beers, I. ; Park, S. (1994) A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Jakobsen, Jens (1994) Low-power GaAs multiplexer and demultiplexer. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Eshraghian, K. ; Blanksby, A. ; Sarmiento, R. ; Lim, C.C. (1994) GaAs design methodology & performance estimates for very high speed circuits using normally-off classes of logic. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gomez, L. ; Hernandez, A. ; Nunez, A. (1994) Delay, power and area expressions for GaAs DCFL circuits and their applications to optimization. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Ousset, M. ; Auvergne, D. (1994) Analytical delay model for Gallium Arsenide digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mason, Richard ; Taylor, John (1994) An electro-optic sample and hold circuit using GaAs MESFET technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Potteau, Laurent ; Quentin, Pierre ; Parisot, Marc (1994) Ku-band modular MMICs for up to 5W power blocks for VSAT applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bosch, Wolfgang ; Garat, Francois (1994) Impact of multi-carrier RF signals on the reliability of power GaAs-FETs for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Feudale, M.A. ; Suriani, A.M. ; McPartlin, M.J. ; Olsen, E.A. (1994) MMICs for satellite Ku band TLC repeaters. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Heide, P. ; Schubert, R. ; Magori, V. ; Schwarte, R. (1994) 24 GHz low-cost Doppler speed-over-ground sensor with fundamental-frequency PHEMT-DRO. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Tieman, T.C.B. ; Van den Bogaart, F.L.M. ; Koomen, P.J. (1994) A single chip C-band linear MMIC vector modulator on GaAs developed for an air-borne active phased-array synthetic aperture radar. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Henkus, J.C. ; Grooters, R. (1994) Ripple+slope performance of satellite channel amplifiers related to GaAs MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

D'Agostino, Stefano ; Gatti, Giuliano ; Marietti, Piero ; Massenzio, Marco ; Trifiletti, Alessandro (1994) A 2-18 GHz monolithic matrix amplifier for low power consumption applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Calori, M. ; Geronzi, G. ; Graffitti, R. ; Lanzieri, C. ; Lasaponara, L. ; Marescialli, L. (1994) Packaged X-band T/R module for active phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Alleva, V. ; Pinto, G. (1994) Modern radar and EW systems call for the large scale use of GaAs MIC and MMIC. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pettenpaul, E. ; Schopf, K.J. (1994) Technical and commercial aspects of GaAs MMICs for enhanced mobile communication. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Puechberty, Eric ; Masliah, Denis ; Delhaye, E. ; Herrera, Amparo (1994) A GaAs power chip set for 3 V cellular communications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Verver, C.J. ; Stubbs, M.G. (1994) Development of 30 and 20 GHz MMIC mixers for miniaturized personal communications systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Schmatz, Martin L. (1994) Sub-milliwatt DC power injection locked quadrature local oscillator at 950 MHz. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Haigh, D. G. ; Webster, D. R. ; Parker, A. E. (1994) Multi-FET MMICs using GaAs MESFETs : applications and new developments. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Suarez, A. ; Savary, P. ; Sarkissian, J.C. ; Camiade, M. ; Quere, R. (1994) Broadband frequency divider for mobile communications systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Corso, V. ; Neto, Victor Patiri ; Fischer, Rodrigo Anicet ; Finardi, Celio Antonio ; Giannini, Franco (1994) GaAs monolithic transimpedance amplifier family (TB 40) developed at R&D center of Telebras. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Raffaelli, Lamberto (1994) Monolithic components for 77 GHz automotive collision avoidance radars. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Dragoman, M. ; Muller, A. ; Iordanescu, S. ; Craciunoiu, F. ; Simion, S. ; Szentpali, B. ; Somogyi, K. ; Riesz, F. ; Varga, S. (1994) Millimeter frequencies generation on a travelling MMIC Schottky diode array and application in an automotive sensor. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Magarshack, John (1994) Novel concepts in MMIC design. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Prasad, S.J. ; Haynes, C. (1994) First demonstration of a GaInP/GaAs HBT YIG-tuned microwave oscillator. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Plouchart, J.O. ; Riet, M. ; Wang, H. ; Wawrzynkowski, E. (1994) Ultra broad band monolithically integrated HBT mixer. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cryan, M. ; Shepherd, P.R. ; Pennock, S.R. (1994) A novel voltage controlled directional coupler using a wide FET structure. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Billonnet, L. ; Brucher, A. ; Cenac, C. ; Delmond, M. ; Meunier, Ph. ; Jarry, B. ; Guillon, P. ; Sussman-Fort, S.E. (1994) Improvement of microwave planar active filters with MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pardini, R. ; Miceli, A. (1994) Ka-band coaxial and waveguide wide temperature range compensated low noise amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Boulouard, Andre ; Le Rouzic, Michel ; Castelletto, Jean Paul ; Legaud, Pierre (1994) Wide-band GaAs MMIC low-pass filters. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lang, Richard ; Blount, Paul (1994) Modelling & characterisation of a Ka-band monolithic PHEMT low-noise feedback amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Caddemi, A. ; Sannino, M. (1994) Analysis of correlations between noise and scattering parameters for a consistent FET modeling approach. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mahfoudi, M. ; Alonso, Jose I. (1994) Systematic design of MMIC broad band 90° phase shifters. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Robinson, J. ; Linton, D. (1994) Expert system techniques applied to MMIC layout including intercomponent coupling. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Carballo, P. ; Montiel, J. ; Sarmiento, R. ; Nunez, A. (1994) Setting up a full-custom design environment on cadence for GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Giannini, F. ; Leuzzi, G. ; Limiti, E. ; Scucchia, L. (1994) Harmonic manipulation cure for high-efficiency power amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cohen, Eliot D. (1994) The impact of the U.S. MIMIC program on MMIC technology and applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Fukuta, Masumi (1994) Recent development of GaAs devices in Japan. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Carr, Gary (1994) What GaAs market? What will make GaAs win in wireless markets. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Turner, Jim (1994) Gallium Arsenide in Europe - a quiet revolution. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Donzelli, G.P. ; Bastida, E.M. (1994) Technology, design and reliability issues in GaAs power devices. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Carballes, Jean-Claude (1994) GaAs based optical devices for telecommunications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Hanke, Gerhard (1994) An experimental all-GaAs 10 Gbit/s synchronous transmission system for optical fibers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Khilla, A.-M. (1994) C-band reconfiguration matrix employing MMIC switched amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Alinikula, P. ; Stadius, K. ; Kaunisto, R. (1994) GaAs RF-modules for wireless applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Crespo, C. ; Perez, F. ; Dorta, P. ; Alonso, Jose I. (1994) Transimpedance amplifier for a 2.5 Gbit/s direct transmission optical system using GaAs MESFETS. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Riishoj, Jesper (1994) 5 Gb/s laser-driver GaAs IC. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

D'Agostino, Stefano ; Marietti, Piero ; Renzella, Nunzio ; Trifiletti, Alessandro (1994) Novel topologies for MMIC four-quadrant multipliers for T/R wideband systems. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Armenise, Mario N. ; Passaro, Vittorio M.N. (1994) Design of a GaAs-based guided-wave heterodyne circuit for signal processing. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Hubner, Michael ; Rattay, Bernard (1994) K- and Ku band MMICs for radio link communications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pedro, Jose Carlos ; Perez, Jorge (1994) On the bias point selection for improved performance in low intermodulation distortion amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gunel, Tayfun ; Yazgan, Bingul (1994) A new approach to the design of low noise stable broadband micro wave amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bava, G.P. ; Debernardi, P. ; Autore, G. ; Campi, D. (1994) Optimization of InGaAsP-based BRAQWET heterostructures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gruzhinskis, V. ; Starikov, E. ; Shiktorov, P. ; Gricius, R. ; Mitin, V. ; Reggiani, L. ; Varani, L. (1994) Noise and impedance of submicron InP diodes. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bellone, S. ; Cocorullo, G. ; Rinaldi, N. ; Vitale, G. (1994) Analytical model of GaAs BMFET structures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Asenov, A. ; Cameron, N. ; Taylor, M. ; Beaumont, S. P. ; Barker, J. R. (1994) Numerical study of the series resistances in deep-submicrometer recess gate MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Portilla, J. ; Campovecchio, M. ; Quere, R. ; Obregon, J. (1994) A new coherent extraction method of FETS and HEMTS models for MMIC applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mezzanotte, P. ; Mongiardo, M. ; Roselli, L. ; Sorrentino, R. (1994) Damping of package resonances in microwave integrated circuits: a FDTD analysis. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Gonzalez, Tomas ; Pardo, Daniel ; Varani, Luca ; Reggiani, Lino (1994) Monte Carlo simulation of electronic noise in MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Martin-Guerrero, T.M. ; Camacho-Peñalosa, C. ; Entrambasaguas-Munoz, J.T. (1994) Simulation of the performance of microwave MESFETs using a distributed model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lott, U. ; Baumberger, W. (1994) Broadband 0.3-7 GHz MESFET amplifier with low noise figure up to fT/2 of the active device. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Langrez, D. ; Duhamel, F. ; Delos, E. ; Salmer, G. (1994) Experimental extraction of equivalent scheme for dual gate field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Calandra, Enrico F. ; Sirna, Guglielmo (1994) CAD-oriented modeling of the optically-controlled GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Filicori, F. ; Vannini, G. ; Monaco, V.A. (1994) A look-up table empirical model for the nonlinear dynamic performance prediction of microwave transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Bonani, F. ; Ghione, G. ; Pirola, M. ; Naldi, C. U. (1994) A large-scale, self-consistent thermal simulator for the layout optimization of power III-V field-effect and bipolar transistors. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Mediavilla, A. ; Tazón, A. ; Garcia, J.L. (1994) Phenomena description of pulsed characterization of GaAs-MESFET transistors for non-linear modelling purposes. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Cojocaru, Vicentiu I. ; Brazil, Thomas J. (1994) A large-signal model for GaAs MESFET's and HEMT's valid at multiple DC bias-points. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Pirola, M. ; Ghione, G. ; Dortu, J. M. ; Muller, J. (1994) An improved P-HEMT large-signal model for medium-power Ka-band amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Schreurs, D. ; Nauwelaers, B. ; De Raedt, W. ; Van Rossum, M. (1994) Requirements of a large-signal HEMT model with regard to non-linear MMIC design. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Lu, Ke ; Perry, Philip ; Brazil, Thomas J. (1994) A new SPICE-type heterojunction bipolar transistor large-signal model. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

Rizzoli, Vittorio ; Costanzo, Alessandra ; Lipparini, Alessandro ; Mastri, Franco ; Muzzarelli, Giulio (1994) Thermal modelling of microwave devices for the electrothermal analysis of nonlinear microwave circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Wang, H. ; Algani, C. ; Caquot, E. ; Dangla, J. (1990) Hybrid HBT oscillator and mixer. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Cetronio, A. ; De Gasperis, P. ; Graffitti, R. ; Marcelli, R. ; Marescialli, L. ; Parrucci, U. ; Rapisarda, S. (1990) Broadband high-Q monolithic oscillator tuned by planar yig resonator. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Bianchi, G. ; Pinto, G. (1990) Electronically tunable bandpass filter. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Platt, S.P. ; Snowden, C.M. ; Miles, R.E. (1990) Bipolar Monte Carlo - An improved valence band model for GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Desrousseaux, P. ; Launay, P. ; Dubon-Chevallier, C. ; Dangla, J. ; Caquot, E. (1990) Compact ECL gate design for double mesa HBT process. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Cocorullo, G. ; Hartnagel, H.L. ; Schweeger, G. ; Spirito, P. (1990) GaAs p + -n-n+ diodes made by Zn diffusion out of a spin-on film. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Liubchenko, V.E. (1990) Honey millimeter wave gunn diodes. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Fricke, K. ; Schweeger, G. ; Wurfl, J. ; Hartnagel, H.L. (1990) Integrated circuits on GaAs for the temperature range from room temperature up to 300°C. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Bastida, E.M. ; Donzelli, G.P. (1990) An experimentally based systematic approach for yield and reliability evaluation in GaAs MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Antolini, P. ; Bastida, E.M. ; Donzelli, G.P. ; Scopelliti, L. ; Villa, W. (1990) Design and optimization for industrial production of a 4-8 GHz monolithic amplifier for high-capacity radio links. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Cotton, F. J. ; Warner, D. J. ; Buck, B. J. ; Pickering, K. L. (1990) Uncommitted GaAs MMICs assembled by flip-chip solder bonding. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Suffolk, J. R. ; Buck, B. J. ; Harvey, A. R. ; Eddison, C. G. ; Warner, D. J. (1990) Production considerations for GaAs MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Breglio, Giovanni ; Cutolo, Antonello ; Zeni, Luigi (1990) Non invasive ultrafast optoelectronic sampling of GaAs devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Ferrero, A. ; Pisani, U. ; Scopelliti, L. (1990) From the foundry to the model - A fully automated system for on-wafer MESFET characterization. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Brambilla, P. ; Magistrali, F. ; Sangalli, M. ; Canali, C. ; Zanoni, E. ; Castellaneta, G. ; Marchetti, F. (1990) Results from electrical caracterization and reliability tests of GaAs/GaAlAs HEMT's. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Garbo, G. ; Martines, G. ; Sannino, M. (1990) Automated test-set for accurate measurements of minimum noise figure of GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Fillard, J.P. ; Castagné, M. ; Gall, P. ; Bonnafe, J. (1990) Transistor specifications and substrate defect's in GaAs test circuits. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Pellegrino, S. ; Boschis, L. ; Daste, P. (1990) Grating formation by wet chemical etching for the fabrication of ultra-low threshold laser structures. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Titz, Ruth ; Roser, Hans Peter (1990) GaAs-Schottky diodes as mixer between 700 GHz and 2500 GHz. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Bava, G.P. ; Debernardi, P. (1990) Performance evaluation of a MWQ all optical modulator. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Battistella, L. ; Bottini, R. ; Fantini, F. ; Magistrali, F. ; Sala, D. ; Vanzi, M. (1990) Field reliability of GaAs emitters for fiber optic telecommunication systems. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Mauri, A. ; Bastida, E.M. ; Chiappa, P.A. ; Donzelli, G.P. ; Feudale, M. (1990) High performance GaAs monolithic transimpedance amplifiers for multigigabit per second fiber optic links. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.

Raffaelli, L. ; Dawe, G. ; Bartle, D. ; Bandla, S. (1990) State of the art pin and FET monolithic switches. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.