Edgar, David L. ; Chen, Yifang ; McEwan, Fiona ; McLelland, Hellen ; Boyd, E. ; Moran, David ; Thoms, Stephen ; Macintyre, Douglas ; Elgaid, K. ; Cao, Xin ; Stanley, Colin ; Thayne, Iain (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
We report the first mm-wave measurements for lattice-matched InP HEMTS with 70 nm T-gates made using a UVIII/PMMA bilayer resist. The measured DC gate resistance was 340 Ω/mm, while the extrapolated fT of the 70 nm device was ~300 GHz for a 2x50 µm width device.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:22 |
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