Madonna, G. L. ; Pfost, M. ; Schultheis, R. ; Mueller, J.E. (2001) Investigations of linearity characteristics for larege-emitter area GaAs HBT power stages. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 96Kb |
Abstract
In this paper the linearity properties of large-emitter-area GaAs heterojunction bipolar transistors are experimentally investigated. The approach is based on AM-AM and AM-PM conversion measurements, performed on-wafer with an active harmonic load-pull system. The measured data are then processed to evaluate the transistor linearity in terms of intermodulation distortion (IMD) and adjacent channel power ratio (ACPR). As an important result, the harmonic source impedance at the second harmonic plays a significant role in determining the maximum output power allowed for a given IMD or ACPR level.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:22 |
Solo per lo Staff dell Archivio: Gestione del documento
