Simbürger, W. ; Bakalski, W. ; Kehrer, D. ; Wohlmuth, H.D. ; Rest, M. ; Aufinger, K. ; Boguth, S. ; Scholtz, A. L. (2001) A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 432Kb |
Abstract
A monolithic integrated radio-frequency power amplifier for the 5.8 GHz band has been realized in a 25 GHz-fT Si-bipolar production technology (B6HF). The 2-stage push-pull type power amplifier uses a planar on-chip transformer as input-balun and for interstage matching. A high-current cascode stage is used for the driver and for the output stage. At 2.7 V, 3.6 V, and 5 V supply voltage a maximum output power of 21.9 dBm, 24 dBm and 26 dBm at 5.8 GHz is achieved. The small-signal gain is 20 dB.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:22 |
Solo per lo Staff dell Archivio: Gestione del documento
