Panks, A. J. ; Batty, W. ; David, S. ; Johnson, R. G. ; Snowden, C. M. (2001) Fully physical electro-thermal CAD for Power FET optimisation by Non Uniform Finger Spacing. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 826Kb |
Abstract
A fully physical electro-thermal model is described. I combines he fast, quasi-2-dimensional Leeds Physical Model of MESFETs and HEMTs, with the compact Leeds thermal impedance ma rix model of time-dependent heat flow in complex 3-dimensional systems.The coupled electro-thermal model is applied o the design optimisation of multigate power FETs. In particular,he possibility of reducing emperature variation between gate fingers by non uniform spacing is examined. The implications for improved efficiency, and for possible reduction of thermal intermodulation distortion and improvement of reliability are discussed. The model is validated experimentally by comparison of simulated results agains infrared thermal images of power FETs.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:22 |
Solo per lo Staff dell Archivio: Gestione del documento
