Abstract

The HF performances of n-type strained Si channel Modulation Doped Field Effect Transistors (MODFETs) with 0.118 µm, 0.130 µm and 0.250 µm gate lengths are reported at 300 K and 50 K. At 300K, intrinsic cut-off frequencies fTi are 65 GHz, 58 GHz, 37 GHz and maximum oscillation frequencies fMAX are 76 GHz ,60 GHz, and 100 GHz , respectively. The 0.130 µm device presents at 300 K a record intrinsic transconductance of 715 mS/mm and excellent noise performances with a de-embedded Minimum Noise Figure NFmin of 0.3 dB at 2.5 GHz. The variation of fMAX underlines the importance of the device parasitic resistances.