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A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system

Cidronali, A. ; Collodi, G. ; Deshpande, M. ; El-Zein, N. ; Manes, G. ; Nair, V. (2001) A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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Abstract

A bi-directional amplifier (BDA) utilizing the negative resistance of Heterojunction Interband Tunnel Diode (HITD) is proposed. Expected features of the BDA are: 1) symmetry and reciprocity of the associated scattering matrix; 2) gain at extremely low DC power consumption. These features make the circuits an enabling electronic function for RF identification tag. The BDA topology consisted of a pair of HITDs biased in the negative dynamic region (NDR) and a lumped element directional coupler with arbitrary impedance terminations. The design techniques along with an experimental validation are provided.

Document type:Conference or Workshop Item (Paper)
Subjects:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Depositato da:CIB Staff
Depositato il:17 Jun 2004
Last modified:16 May 2011 13:22

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