Litwin, A. ; Chen, Q. ; Johansson, J. ; Ma, G. ; Olofsson, L-A. ; Perugupalli, P. (2001) High Power LDMOS technology for wireless infrastructure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract
The progress in wideband cellular systems was followed by the development of the necessary transistor technology. This contribution describes microwave LDMOS transistors used in RBS (Radio Base Station) amplifiers. We discuss the issues of the manufacturing process, packaging, reliability, RF performance and models necessary for successful devices for 3G systems at 2.1 - 2.2 GHz.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:21 |
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