Deluca, P.M. ; Landini, B.E. ; Welser, R. E. (2001) Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated.Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The large area DC current gain was increased by a factor of 3 at a given base sheet resistance via growth optimization. DHBT devices exhibit a current gain cut-off frequency of ft ~ 125 GHz and a unilateral gain cut-off frequency of fmax ~ 125 GHz.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:21 |
Solo per lo Staff dell Archivio: Gestione del documento
