Long, Sabine ; Escotte, L. ; Graffeuil, Jacques ; Fellon, P. ; Roques, Daniel (2003) Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
The design of a coplanar low-noise amplifier (LNA)is presented in this paper.Pseudomorphic high electron mobility transistors (PHEMTs),optimized for power applications,are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 -31 GHz frequency band with a 20 dB power gain.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:31 |
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