Abstract

In this work,,we present the characteristics of the 0.1 ໃ gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). The MHEMTs with ī-shaped off-set gates (70 ໃ width and 2 fingers)were fabricated using the double heterostructure epitaxial structure and characterized through the DC,Noise and RF measurements.Measured channel current density and transconductance (gm )were 442 mA/mm and 409 mS/mm,respectively.Noise characteristics were measured in the frequency range from 50 GHz to 61 GHz,and show 1.8 dB at 50GHz.From RF measurements,154 and 433 GHz were obtained for the cut- off frequency (fT )and maximum frequency of oscillation (fmax ),respectively.A superior fmax of 433 GHz achieved in the work is one of the first reports among the fabricated 0.1 ໃ gate length MHEMTs.