Abstract

In the paper is shown that,when devices are strongly affected by low-frequency dispersion effects, simply deriving the i/v characteristics through direct integration of bias-dependent differential parameters leads to results which are only locally self-consistent and coherent with empirical data.Dynamic drain current deviations due to charge trapping and self-heating phenomena in FETs, introducing a more complex dependence on average applied voltages and power in the dynamic i/v characteristics,must be taken into account by means of accurate approaches, such as the recently proposed equivalent voltage model [2 ]. Instead,integration of the low-frequency differentialparameters in a suitably modified equivalent voltage domain is shown to be consistent with device physics. Experimental evidence is provided in the paper.