Neumann, S. ; Prost, W. ; Tegude, F.-J. (2003) InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 134Kb |
Abstract
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas.Carbon doped GaAsSb lattice matched on InP are of pronounced interest for high speed double heterostructure bipolar transistors (DHBTs).We observed a significant effect of the nitrogen carrier gas on the growth behaviour which results in lower distribution coefficients.A linear doping behaviour with small CBr4 flows up to p=4 x 10 19 cm-3 can be observed and first realized DHBT structures shown fT and fmax values of 100 GHz and 60GHz, respectively.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:30 |
Solo per lo Staff dell Archivio: Gestione del documento
