Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
Current collapse in AlGaN/GaN HFETs is investigated at low temperatures using a transient current monitoring technique. The carrier trapping and de-trapping mechanisms are studied, and two distinct relaxation mechanisms are observed. They are associated to the presence of two close deep energy levels in the bandgap.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:30 |
Solo per lo Staff dell Archivio: Gestione del documento
