Walden, Mark G. (2001) Pulsed power operation of commercially available silicon carbide mesfets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 37Kb |
Abstract
Sample devices of commercially available SiC MESFETs were measured under pulsed conditions. The results show significant improvements over traditional III-V devices measured under the same conditions. The measurements indicate that SiC devices may have several advantages for use in pulsed applications such as Phased Array Radar.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:21 |
Solo per lo Staff dell Archivio: Gestione del documento
