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Parameter extraction and evaluation of the Bias dependence of Tf, for the VBIC Model used on a GaAs HBT

Olavsbråten, Morten (2001) Parameter extraction and evaluation of the Bias dependence of Tf, for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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Abstract

This paper presents a practical method of extracting the bias dependent parameters of the forward transit time Tf, implemented in the VBIC model used on a GaAs HBT. The work should be of great value for the circuit designers, who want to have an easy practical way of including good model parameters from a few simple measurements. This paper includes an evaluation of the implemented bias dependence of Tf in the VBIC model. The VBIC model is extracted from measurements on a GaAs HBT made by Caswell Technology. The model shows good agreement with these measurements.

Document type:Conference or Workshop Item (Paper)
Subjects:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Depositato da:CIB Staff
Depositato il:17 Jun 2004
Last modified:16 May 2011 13:21

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