Abstract

We present a new topology of 8 Phase Shift Keying modulator that allows achieving a very high accuracy of 0.4dB and 3° on the 8-8.4 GHz band in the –10°C to +55°C temperature range, with only one tuning voltage and a very low consumption. The device has been manufactured on the D02AH OMMIC GaAs PHEMT process but has been transposed to other FET foundries. This new topology is covered by a patent [1].It has been transfered and improved by Alcatel Space Industries, to fit industrial quality requirements, in order to define a commercial product of high data rate transmission channel for micro-satellites.