Sajin, George ; Matei, Elena ; Marcelli, Romolo (2000) Microwave tunable straight edge resonator on silicon membrane. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
This work presents the experimental realization and the performances of a magnetostatic microwave straight edge tunable resonator (SER) placed on a silicon membrane. The aim of this approach is to study a miniaturised device, integrable in a planar micromachined microwave circuit. S11 and S21 parameters of this device are presented for different magnetic bias fields, exhibiting frequency tunability between 4.2 GHz and 7.25 GHz. The utilization of silicon membranes to support these devices offers important openings toward the integration of magnetostatic wave devices with micromachined structures.
| Document type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:26 |
Solo per lo Staff dell Archivio: Gestione del documento
