Alleaume, P.F. ; Auxemery, Ph. ; Viaud, J.P. ; Blanck, H. ; Lajugie, M. (2000) HBT technology for high power X band and broadband amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 152Kb |
Abstract
For many applications like active phased array antennas for airborne radar, high power levels are required. To provide high performance and high manufacturing yield at a reduced coast, a MMIC solution is naturallyvery attractive. This can be achieved by choosing an efficient technology for active components. In this paper, a solution based on the HBT technology is presented. The 10W class, X band power amplifiers, and 1W, 4.5GHz-18GHz amplifiers were designed using the HBT technology HB20P from UMS. Based on the results obtained, this paper will discuss the capability and the technology improvements needed to reach the power and frequency bandwidth specifications with margin.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:26 |
Solo per lo Staff dell Archivio: Gestione del documento
