Radisic, Vesna ; Weinreb, Sander ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Harvey, Duane ; Matloubian, Mehran ; Nguyen, Loi (2000) Ultra broadband low power MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 µm T-gate InP HEMTs with 225 µm gate periphery. This compact microstrip MMIC is only 1.5 mm 2 in size. It exhibits gain of 12.51 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:26 |
Solo per lo Staff dell Archivio: Gestione del documento
