Muldavin, Jeremy B. ; Rebeiz, Gabriel M. (2000) Novel Series and Shunt MEMS Switc Geometries for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
In this paper,no el metal membrane series switches and inducti ely tuned shunt switches are presented.The series switch produces an isolation better than - 30 dB at 5 GHz in the up-state and return loss less than -20 dB from DC to 20 GHz. The shunt switch geometry can be modi fied to specify the resonant frequency of the switch in the down-state.The shunt switch is modeled by an equivalent CLR circuit.The MEMS membrane height is 1.5-2.5 µm,resulting in a pulldown oltage of 15-25 V.Application areas are in low-loss high-isolation communication and radar switches.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:26 |
Solo per lo Staff dell Archivio: Gestione del documento
