Abstract

Accurate simulation of PHEMT based GaAs MMIC ’s requires a bias dependent model that can be used in both small signal and large signal analysis and is accurate over a wide range of applied bias.The majority of models that are supplied with the commercial high frequency simulators have limitations that prevent this goal being achieved.The model areas that require attention are the symmetry of the model at drain-source voltages close to zero,use of the correct time delays within the device and a more precise inclusion of the bias dependent intrinsic noise processes.In this paper an approach to the generation of a large signal model is described that attempts to reconcile these requirements.