Giannini, Franco ; Graglia, Fabio ; Leuzzi, Giorgio ; Serino, Antonio (2000) Accurate microwave characterisation of power LD-MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
An accurate,non-quasi-static,non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure.The model is intended for applications to high-efficiency power amplifiers in the low microwave region.The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination.The model differs from the standard BSIM3 or MODEL9 models,ensuring accurate high-frequency performances.
| Document type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:26 |
Solo per lo Staff dell Archivio: Gestione del documento
