Bue, F. ; Gaquière, C. ; Hue, X. ; Boudart, B. ; Crosnier, Y. ; De Jaeger, J.C. ; Carnez, B. ; Pons, D. (2000) Influence of recess and epilayers in the 26 – 40 GHz band HEMT’s intermodulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The comparison of the linearity performance for three PHEMTs have been investigated in Ka band. The studied transistors are a single recessed PHEMT, a double recessed PHEMT and a double recessed dual channel PHEMT. The main result is : at a given output power level, the double recess allows a large improvement of the intermodulation ratio (IMR), thanks to its higher drain-source bias voltage capability, compared to the single recess. The second result is : the double recessed PHEMTs comparison shows that the dual channel, thanks to a more wide and uniform ransconductance distribution than the single channel, is a better solution for linearity application at 26GHz.
| Document type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
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