Boudrissa, M. ; Delos, E. ; Cordier, Y. ; Theron, D. ; De Jaeger, J.C. (2000) Gate ionization current of an Enhancement-Mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metamorphic growth of Al0.67In0.33As/Ga0.66In0.34As HEMT structure on a GaAs substrate. The devices, which are the first reported for Enhancement-Mode Al0.67In0.33As/Ga0.66In0.34As MM-HEMT’s, exhibits good dc and rf performance. Good Schottky characteristics have been obtained (a forward turn-on voltage of 0.9V and a typical reverse gate to drain breakdown voltage of 16 V). The 0.4µm gate length devices have a saturation current of 455 mA/mm at +0.8V gate voltage. Gate current studies, versus gate-to-drain extension have been observed, in the first time, in such as devices, showing gate current issued from impact ionization.
| Document type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
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