Touirat, M. ; Roger, M. ; Nuyen, L.T. ; Crosnier, Y. ; Salmer, G. (2000) 0.3µm-N-HIGFET capabilities for microwave power apllications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 176Kb |
Abstract
0.3µm HIGFET transistors have been realized for microwave power applications. Power measurements at 3.5GHz using load-pull testbench have been carried out. Transistors exhibit an output saturated power of 16dBm and a power density of 370mW/mm for a 3V drain-to-source voltage.
| Document type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
Solo per lo Staff dell Archivio: Gestione del documento
