Menozzi, R. (2000) Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
High-field reliability issues connected with hot electron and impact ionization are typically the reliability bottleneck of power FETs for microwave and millimeter-wave applications. This work deals with some aspects of this problem, from characterization and accelerated stressing techniques to the physical degradation mechanisms, using power AlGaAs/GaAs HFETs as a test vehicle.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
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