Hayashi, Hisanori ; Ui, Norihiko ; Saito, Toshiaki ; Fukaya, Jun (2000) A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
High efficiency 50W GaAs power device h s been developed using two high bre kdown voltage G As FET chips that have an AlGaAs/GaAs heterostructure.Circuit designing considerations include the termination of the second-harmonics for improved power added efficiency.The resultant output power at the 3dB g in compression point is 47.0dBm with 58%power added efficiency (PAE)and 15.0 dB linear gain at 1.6GHz. To the uthors ’knowledge,this is the highest efficiency for 50-w tt G As device in the industry.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
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