Sacconi, Fabio ; Di Carlo, A. ; Della Sala, F. ; Lugli, P. (2000) Modeling of GaN-based heterostructure devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
Self-consistent quantum models of GaN-based nanostructures are presented. We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors through an optimized effective mass approach based on the self-consistent solution of the Schrödinger and Poisson equations coupled to a quasi-2D model for the current flow.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
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