Cojocaru, Vicentiu I. ; Brazil, Thomas J. (2000) Low frequency dispersion effects on the input characteristics of microwave FETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The paper presents the experimental results of a low frequency test carried on a packaged GaAs MESFET, emphasizing the presence of some significant dispersion effects in relation to the input C-V and I-V characteristics of the device. The test has been performed within the frequency range 10kHz÷40MHz on a commercial, packaged GaAs MESFET, connected in a special configuration and using an impedance meter system. The results presented show a significant variation of these two input characteristics with frequency.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:25 |
Solo per lo Staff dell Archivio: Gestione del documento
