Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model. In: IEEE MTT-S International Microwave Symposium Digest, 2002, 2-7 giugno 2002, Seattle, Washington.
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Official URL: http://ieeexplore.ieee.org/iel5/7898/21799/01011765.pdf?tp=&arnumber=1011765&isnumber=21799
Abstract
A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | high electron mobility transistors, intermodulation distortion, microwave field effect transistors, semiconductor device measurement, semiconductor device models |
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/07 Misure elettriche e elettroniche Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | Biblioteca DEIS |
| Depositato il: | 07 Apr 2006 |
| Last modified: | 16 May 2011 14:02 |
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