Pozela, J. ; Pozela, K. ; Juciene, V. (2000) Decrease of Modfet channel conductivity with increasing sheet electron concentration. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The great decrease of electron mobility with increasing sheet electron concentration ns in modulation-doped AlGaAs/GaAs/AlGaAs quantum wells is observed. This effect is explained by increasing scattering of degenerated electrons by polar optical phonons. At ns >10 15 m -2 , the mobility decrease exceeds the increase of ns, and the channel conductivity decreases with increasing ns.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
Solo per lo Staff dell Archivio: Gestione del documento
