Dorofeev, A.A. ; Matveev, Yu.A. ; Chernavskii, A.A. (2000) Researches of two and three-output structures with effect of resonant tunneling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 461Kb |
Abstract
The present paper is devoted to the development of production process of transistor structures with effect of resonant tunneling (RTT), researching static and dynamic characteristics and working frequency band of the samples and definition of possible areas of their application.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
Solo per lo Staff dell Archivio: Gestione del documento
