Lapin, V.G. ; Temnov, A.M. ; Krasnik, V.A. ; Petrov, K.I. (2000) GAAS Microwave offset gate self-aligned MESFETs and their applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 56Kb |
Abstract
The present paper is devoted to microwave transistors, developed in SRPC "Istok". Design, fabrication and characteristics of power and low noise GaAs MESFET's and their applications are presented in this paper. The low noise MESFETs exhibit a noise figure of 1.2 dB at 15 GHz and power MESFET's show an output power density of 0.5 W/mm, with a typical power-added efficiency of 35% and thermal resistance of 10-12 °C/W for a MESFET with a total gate width of 4mm.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
Solo per lo Staff dell Archivio: Gestione del documento
