Raynaud, C. ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; Grouillet, A. ; Martin, F. ; Dambrine, G. ; Vanmackelberg, M. ; Picheta, L. ; Mackowiak, E. ; Brut, H. ; Llinares, P. ; Sevenhans, J. ; Compagne, E. ; Fletcher, G. ; Flandre, D. ; Dessard, V. ; Vanhoenacker, D. ; Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
For the first time, excellent microwave performances including high frequency noise are ported for 0.25 micron gate channel length Fully Depleted (FD) Silicon-on-Insulator (SOI) MOSFET’s: a maximum extrapolated oscillation frequency (fmax) of 70 GHz and the state-of-the-art minimum noise figure (NFmin) of 0.8 dB with high available associated gain (Gass) of 13 dB at 6 GHz, at Vds = 0.75 V, Pdc < 3 mW, have been measured. We demonstrate that the kink related low frequency noise overshoot induced by the floating body effects disappears if the active silicon film thickness is thinned down to 30 nm. Ring oscillators measurements show also that SOI inverters are 30% faster than bulk ones. Finally, the operation at 1.8 V of a sigma delta modulator as well as of critical RF circuits (quadrature generator and mixers) for a zero IF 2 GHz GSM receiver has been demonstrated with this technology.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
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