Wieszt, A. ; Dietrich, R. ; Lee, J.-S. ; Vescan, A. ; Leier, H. ; Piner, E.L. ; Redwing, J.M. ; Sledzik, H. (2000) Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
We report on the DC,the mall ignal and the RF power performance of AlGaN/GaN HFET grown on emi in ulating (.i.)SiC ubstrate.DC characterization how a record transconductance of 300mS/mm for a device ith a gatelength of 0.3 µm.Load pull measurements at 10 GHz were performed,indicating output power levels above 4Watts cw for a unpas ivated 1.6mm device.Finally,tandard equivalent circuit parameter are extracted and verified for devices with different gatewidths.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
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