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Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations

Schreurs, D. ; Tufillaro, N. ; Wood, J. ; Usikov, D. ; Barford, L. ; Root, D.E. (2000) Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

We have developed a procedure to determine a behavioural non-linear model for microwave devices and ICs that is directly based on vectorial large-signal measurements. For the examples of a HEMT and an amplifier IC, we represent the terminal currents in the time domain by a dynamic model that is fitted to the embedded terminal voltages.

Document type:Conference or Workshop Item (Paper)
Subjects:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Depositato da:CIB Staff
Depositato il:17 Jun 2004
Last modified:16 May 2011 13:24

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