Cetronio, A. ; Ciceroni, S. ; Graffitti, R. ; Lanzieri, C. ; Peroni, M. (1992) Process technology evaluation for high yield reproducible HEMT/PM-HEMT MMIC fabrication. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract
In this article we will report on a high yield HEMT/PM-HEMT technology, based an optimised ohmic contact formation and gate recessing. With this technology active device fabrication yields are better than 90% and corresponding key parameter tollerances always better than ± 5%, as required for high yield MMIC fabrication.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 17 Feb 2006 |
| Last modified: | 16 May 2011 13:58 |
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