Hartnagel, H.L. ; Lin, C.I. ; Rodriguez, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000) Recent Development in Device Technology for Integrated THz-Circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
Recently there is significantly increasing interest in the development of THz devices and circuits. Different from the MMIC device and circuit technologies, THz devices approach to the electrical limit of semiconductors and passive THz circuit elements have much less dimension tolerance. Therefore, device and circuit technologies concerning to such limitations have to be reconsidered and modified. In this paper a review of the important device technologies used in the THz frequency regime is presented.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
Solo per lo Staff dell Archivio: Gestione del documento
