Tkachenko, Y. ; Zhao, Y. ; Wei, C. ; Bartle, D. (2000) Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
An integrated enhancement/depletion mode InGaP/AlGaAs power PHEMT process is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes excellent etch selectivity and surface charge screening properties of InGaP material. At 900 MHz D-mode PHEMT features output power density of 630 mW/mm with PAE=85% at 7 V, while E-mode PHEMT features PAE>70% from 2 to 7 V and high output power densities, especially at lower voltages.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
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