Cova, Paolo ; Chioato, Elena ; Conti, P. ; Dall'Aglio, Sandra ; Fantini, F. ; Manfredi, Manfredo ; Menozzi, Roberto ; Necchi, Riccardo (1994) Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract
The aim of this investigation is to study hot electron phenomena leading to impact ionization and light emission in commercial InGaAs-channel pseudomorphic HEMTs. Optical measurements have been performed at several temperatures by rneans of a single-photon counting technique in the range 1.1 eV - 3.0 eV, while biasing the devices in the impact ionization regime. The observed spectra show a sharp peak that denotes band-to-band recombinations of cold carriers and a high energy tail corresponding to hot electron transitions.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 17 Feb 2006 |
| Last modified: | 16 May 2011 13:56 |
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