Zamanillo, J.M. ; García, J.A. ; Mediavilla, A. ; Tazón, A. ; Pérez-Vega, C. (2000) A straightforward method for determining SiGe HBTs intrinsic elements of hibrid PI and TEE small-signal circuit models for multibias operation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 350Kb |
Abstract
A new method to simultaneously determine the complete Tee and hybrid Pi equivalent circuit parameters of the SiGe HBT including parasitic intrinsic base resistance, is presented. This approach employs analytically derived expressions and is based on the analysis of measured scattering parameters over an adequate frequency range. This paper shows that a one-to-one correspondence exists between Tee and Pi topologies and very good fit between measured and simulated scattering parameters in the frequency range between 0.05 to 50 GHz is obtained.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:24 |
Solo per lo Staff dell Archivio: Gestione del documento
