Abstract

As an extension of previous works in the optical-microwave interaction field, this paper shows the results of the research on large signal dynamic behaviour (Pulsed I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, when the incident optical input power is changed. A complete bias and optical power dependence of the large signal model for a P-HEMT, is determined from experimental scattering parameters, DC and pulsed measurements. All derivatives of the model shown here are continuous for a realistic description of circuit distortion and intermodulation. The model is also valid for GaAs MESFET. experimental results show very good agreement with theoretical analysis.