Ahdjoudj, Mourad ; Boudiaf, Ali ; Pouvil, Pierre (1996) K-band monolothic VCO using PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
An appropriate nonlinear design methodology based on the optimisation of the load cycles is applied for a K-band MMIC VCO using 0.2 um GaAlAs/GaInAs/GaAs Pseudomorphic HEMT technology. A tuning range over 13.5% bandwidth (22.5-25.8 GHz) is obtained, with a high sensitivity of 4.5 GHz/V. A constant output power of 6 dBm and a phase noise level less than - 85 dBc/Hz at 1 MHz offset from the carrier, were measured over the tuning range.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 16 Feb 2006 |
| Last modified: | 16 May 2011 13:54 |
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