Sylvestre, A. ; Aniel, F. ; Boucaud, P. ; Julien, F.H. ; Jin, Y. ; Crozat, P. ; de Lustrac, A. ; Adde, R. (1996) Electroluminescence study of "on" and "off state breakdown in InP based HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
We investigate the low-energy (0.7-0.9eV) electroluminescence (EL) at low temperature (30 - 100 K) of short gate lattice-matched InP based HEMTs. This study allows to observe directly impact ionization in the "on" and "off" state Ino.53Gao.47As channel. In the on-state, the evolution of the luminescence as a function of the bias applied to the device shows that the electroluminescence intensity depends on two parameters: the gate-drain electric field and the drain current intensity. The voltage breakdown in the off-state is discussed in term of impact ionization in the InGaAs channel due to hot carriers originating from the gate leakage current.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 16 Feb 2006 |
| Last modified: | 16 May 2011 13:54 |
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