Schreurs, D. ; van der Zanden, K. ; Verspecht, J. ; De Raedt, W. ; Nauwelaers, B. (1998) Real-time measurement of InP HEMT'S during large-signal RF overdrive stress. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text disponibile come:
![[img]](http://amsacta.cib.unibo.it/style/images/fileicons/application_pdf.png)
| PDF 2059Kb |
Abstract
We show that the "Nonlinear Network Measurement System" allows to accurately measure the real-time degradation of microwave active devices under large-signal RF overdrive stress. This new kind of measurements gives a better insight in the failure mechanisms. We present results of both off- and on-state degradation of InP based HEMT's.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 16 Feb 2006 |
| Last modified: | 16 May 2011 13:52 |
Solo per lo Staff dell Archivio: Gestione del documento
