Hartnagel, Hans L. (2002) Millimeter-Wave and Terahertz Devices Based on MEMS Concepts. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Full text disponibile come:
| PDF 658Kb |
Abstract
The higher the frequency, the more significant are the losses. Therefore it is important even for semiconductors with relatively large energy gap to remove as much semiconducting material as possible. This leads to components and their circuits to be produced on thin semiconducting membranes where most of the substrate is etched away. It is then a relatively small step to employ mechanical motion of suitably structured devices for such properties as fine-tune phase shifting or power switching. Relevant technology details are presented. A number of active and passive components are described with their special operational behaviour.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:23 |
Solo per lo Staff dell Archivio: Gestione del documento

