García, José A. ; Pedro, José C. ; Carvalho, Nuno B. ; Mediavilla, Angel ; Tazón, Antonio (1998) Accurate nonlinear resistive FET modeling for IMD calculations. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
This work discusses the nonlinear modeling procedures required for intermodulation distortion (IMD) calculations of MESFETs biased in the resistive (linear) region. An automatic full two-sided characterization of Ids(Vgs, Vds) is compared against the previously published extraction of Ids(vds) in this problematic region. It is shown that this one-sided Taylor series extraction is insufficient for most applications of the FET in its triode zone, and thus an alternative method is proposed.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 16 Feb 2006 |
| Last modified: | 16 May 2011 13:50 |
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