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Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction

Giannini, F. ; Leuzzi, G. ; Orengo, G. ; Colantonio, P. (2002) Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

A detailed procedure to learn a nonlinear model together with its first-order derivative data is presented. Two correlated multilayer perceptron (MLP) neural networks providing the model and its first-order derivatives, respectively, are trained simultaneously. Applying this method to FET devices leads to nonlinear models for current and charge fitting derivative parameters. The training data is the bias-dependent equivalent circuit parameters extracted from S-parameter measurements. The resulting models are suitable for both small-signal and large-signal analyses, in particular for intermodulation distortion prediction. Examples for power amplifier simulations of power transfer, efficiency and intermodulation distortion performances are presented.

Document type:Conference or Workshop Item (Paper)
Subjects:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Depositato da:CIB Staff
Depositato il:17 Jun 2004
Last modified:16 May 2011 13:23

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