Pengelly, Raymond S. (1998) GaAs RFICs For mobile telephone applications -- A review. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text disponibile come:
| PDF 3518Kb |
Abstract
By far the single largest application for GaAs RFICs in commercial/consumer platforms is in mobile telephone handsets covering several standards such as analog AMPS, digital PCS TDMA and CDMA, Japanese PHS, European GSM, DCS1800 and DECT. However, a considerable number of technologies are potentially availabie for RFIC designs such as Si BiCMOS, Si LDMOS, SiGe, GaAs MESFET, GaAs pHEMT, AIGaAs and InGaP HBT. After a brief review of competing technologies, emphasis in this paper is placed on describing a number of examples of GaAs RFiC designs used in present telephones concentrating on the highest performance parts required in PCS and dual-band CDMA platforms. Integration of receive and transmit functions, providing substantial area reduction and integration improvement for next generation platform applications, will be described such as a PCS transmitter module containing GaAs upconverter, driver amplifier and power amplifier ICs. Technologies are compared for future higher levels of integration allowing the production of "one-chip radios".
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 16 Feb 2006 |
| Last modified: | 16 May 2011 13:50 |
Solo per lo Staff dell Archivio: Gestione del documento

